2W005G thru 2W10G
Vishay General Semiconductor
Document Number: 88528
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Typical IR less than 0.5 µA
• High case dielectric strength
• High surge current capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for power supply, adapter, charger,
lighting ballaster on consumers and home appliances
applications.
MECHANICAL DATA
Case: WOG
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
e4
PRIMARY CHARACTERISTICS
IF(AV) 2.0 A
VRRM 50 V to 1000 V
IFSM 60 A
IR5.0 µA
VF1.1 V
TJ max. 150 °C
Case Style WOG
+
−
~
~
+
−
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (Fig. 1) IF(AV) 2.0 A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 60 A
Rating for fusing (t < 8.3 ms) I2t 15 A2s
Operating junction and
storage temperature range TJ, TSTG - 55 to + 150 °C
2W005G thru 2W10G
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88528
Revision: 15-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length P.C.B. mounting
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL 2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G UNIT
Maximum
instantaneous forward
voltage drop per diode
2.0 A VF 1.1 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction
capacitance per diode 4.0 V, 1 MHz CJ 40 20 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G UNIT
Typical thermal resistance (1) RθJA
RθJL
40
15 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
2W06G-E4/51 1.12 51 100 Plastic bag
Figure 1. Derating Curve Output Rectified Current
025 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2.0
2.4
5.0
10
20
=
I
(pk)
I
(AV)
60 Hz
Resistive or
Inductive Load
Capacitive Load
(per Leg)
Ambient Temperature (°C)
Average Forward Output Current (A)
Copper Pads
0.22 x 0.22"
(5.5 x 5.5 mm)
P.C.B.
0.375"
(9.5 mm)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
10
20
40
50
60
30
100
10
1
TA = 25 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
2W005G thru 2W10G
Vishay General Semiconductor
Document Number: 88528
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
1
10
100
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
020 40 60 80100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
100
0.1 110
1
10
100
Reverse Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
100
0.01 0.1 110 100
0.1
1
10
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
0.220 (5.6)
0.160 (4.1)
0.388 (9.86)
0.348(8.84)
1.0 (25.4) MIN.
0.060 (1.52)
0.020 (0.51)
0.032 (0.81)
0.028(0.71)
0.348(8.84)
0.308(7.82)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Case Style WOG
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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