DATA SH EET
Preliminary specification 2001 Sep 13
DISCRETE SEMICONDUCTORS
PEMB11
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
M3D744
2001 Sep 13 2
Philips Semiconductors Preliminary specification
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩPEMB11
FEATURES
•300 mW total power dissipation
•Very small 1.6 mm x 1.2 mm ultra thin package
•Excellent coplanarity due to straight leads
•Replaces two SC-75/SC-89 packaged transistors on
same PCB area
•Reduces required PCB area
•Reduced pick and place costs.
APPLICATIONS
•General purpose switching and amplification
•Inverter and interface circuits
•Circuit driver.
DESCRIPTION
PNP resistor-equipped transistors in a SOT666 plastic
package.
MARKING
TYPE NUMBER MARKING CODE
PEMB11 B1
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
MAM451
123
465
Top view
654
123
R2
TR1 TR2
R1
R1 R2
Fig.1 Simplified outline (SOT666) and symbol.
MBK120
2, 5 6, 3
1, 4
Fig.2 Equivalent inverter symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage −50 V
ICM peak collector current −100 mA
TR1 PNP −−
TR2 PNP −−
R1 bias resistor 10 kΩ
R2 bias resistor 10 kΩ
2001 Sep 13 3
Philips Semiconductors Preliminary specification
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩPEMB11
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on a FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor unless otherwise specified
VCBO collector-base voltage open emitter −−50 V
VCEO collector-emitter voltage open base −−50 V
VEBO emitter-base voltage open collector −−10 V
VIinput voltage
positive −+10 V
negative −−40 V
IOoutput current (DC) −−100 mA
ICM peak collector current −−100 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤25 °C; note 1 −300 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient notes 1 and 2 416 K/W
2001 Sep 13 4
Philips Semiconductors Preliminary specification
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩPEMB11
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified
ICBO collector-base cut-off current VCB =−50 V; IC=0 −−−100 nA
ICEO collector-emitter cut-off current VCE =−50 V; IB=0 −−−1µA
V
CE =−30 V; IB= 0; Tj= 150 °C−−−50 µA
IEBO emitter-base cut-off current VEB =−5 V; IC=0 −−−400 µA
hFE DC current gain VCE =−5 V; IC=−5mA 30 −−
V
CEsat collector-emitter saturation
voltage IC=−10 mA; IB=−0.5 mA −−−150 mV
Vi(off) input off voltage VCE =−5 V; IC=−100 µA−−1.1 −0.8 V
Vi(on) input on voltage VCE =−0.3 V; IC=−10 mA −2.5 −1.8 −V
R1 input resistor 7 10 13 kΩ
resistor ratio 0.8 1.0 1.2 kΩ
Cccollector capacitance IE=I
e= 0; VCB =−10 V; f = 1 MHz −−3pF
R2
R1
--------
2001 Sep 13 5
Philips Semiconductors Preliminary specification
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩPEMB11
PACKAGE OUTLINE
UNIT bpcDE e1HELpw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
01-01-04
01-08-27
IEC JEDEC EIAJ
mm 0.27
0.17 0.18
0.08 1.7
1.5 1.3
1.1 0.5
e
1.0 1.7
1.5 0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0 1 2 mm
scale
A
0.6
0.5
c
X
123
456
Plastic surface mounted package; 6 leads SOT666
YS
wMA
2001 Sep 13 6
Philips Semiconductors Preliminary specification
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩPEMB11
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyoftheseproducts,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Sep 13 7
Philips Semiconductors Preliminary specification
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩPEMB11
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
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Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Sep 13 Document order number: 9397 750 08597
