ZY1...ZY200, ZY1S...ZY200S Silicon Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Samller voltage tolerance on request. The diodes in plastic case DO-41 are designated by suf- fix S. These diodes are delivered taped. ran ke max. 3.2 > 4 max. in. 26 poJ 6.65 - > Cathode Mark 08 & Plastic case 58A2 according to DIN 41883 Weight approx. 0.4 g Dimensions in mm 1 Millimeters C Dim. Min. Max. i= | B A 4.07 5.20 A \ B 2.04 271 Cathode | Mark Cc 27.94 pe D 0.71 0.86 Plastic case DO-41 Weight approx. 0.35 g Absolute Maximum Ratings Symbol Value Unit Zener Current see Table Characteristics Power Dissipation at Tamp = 25 C Prot 2 W Junction Temperature Tj 150 C Storage Temperature Range Ts 55 to + 150 C 1 Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. Characteristics at Tarp = 25C Symbol Min. Typ. Max. Unit Thermal Resistance Rina - _ 60 K/W Junction to Ambient Air " Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. ME 468271) Goo4vo92 of9 wyZY1...ZY200, ZY1S...ZY200S Type Zener 2) Dynamic Temp. coeff, Test Reverse Admissible voltage rsistance of Zener volt. current voltage Zener current at at at at at ler br lar In = 1 pA Tams = 45C f= 1 kHz V2V 10 ayz 10-4/K ley MA Va V IpmA zyY1) 0.71 ... 0.82 0.5 (<1) 26...16 100 - 1000 ZY3,9 3.7 ...4.1 3.8 (<7) 7...4+2 100 - 410 ZY4,3 4.0 ...4.6 3.8 (<7) 7...43 100 - 360 ZY4,7 4.4...5.0 3.8 (<7) 7...4+4 100 - 330 ZY5,1 4.8 ...5.4 2 (<5) 6...4+5 100 - 300 ZY5,6 5.2...6.0 1 (<2) 3...45 100 >1.5 275 ZY6,2 5.8 ...6.6 1 (<2) -1...+6 100 >1.5 245 ZY6,8 6.4... 7.2 1 (<2) 0... +7 100 >2 220 ZY7,5 7.0...7.9 1 (<2) 0...+7 100 >2 200 ZY8,2 7.7 ...8.7 1 (<2) +3...4+8 100 >3.5 180 ZY9,1 8.5 ...9.6 2 (<4) +3...+8 50 >7.4 165 ZY10 9.4... 10.6 2 (<4) +5...4+9 50 >8.2 145 ZY11 10.4 ...11.6 4 (<7) +5...+10 50 >9.2 135 ZYi2 11.4...12.7 4 (<7) +5... +10 50 > 10 120 ZY13 12.4...14.1 5 (<10) +5...4+10 50 > 10.7 110 ZY15 13.8... 15.8 5 (<10) +5... +10 50 >12 98 ZY16 15.3 ...17.1 6 (<15) +6...411 25 > 13.3 90 ZY18 16.8 ...19.1 - 6 (<15) +6...411 25 > 14.7 80 ZY20 18.8 ...21.2 6 (<15) +6...411 25 > 16.5 72 ZY22 20.8 ... 23.3 6 (<15) +6...411 25 > 18.3 66 ZY24 22.8 ... 25.6 7 (<15) +6...411 25 > 20.1 60 ZY27 25.1 ... 28.9 7 (<15) +6...+11 25 > 22.5 53 ZY30 . 28 ... 32 8 (<15) +6...411 25 > 25.1 48 ZY33 31 ...35 8 (<15) +6...+11 25 > 27.8 44 ZY36 34... 38 21 (<40) +6...411 10 > 30.2 40 ZY39 37... 41 21 (<40) +6... +11 10 > 32.9 37 ZY43 40... 46 24 (<45) +7... +12 10 > 35.6 33 ZY47 44... 50 24 (<45) +7 ...412 10 > 39.2 30 ZY51 48 ... 54 25 (<60) +7...412 10 > 428 27 ZY56 52... 60 25 (<60) +7 ...+12 10 > 47.3 25 ZY62 58 ... 66 25 (<80) +8...4+13 10 >51.7 21 ZY68 64... 72 25 (<80) +8... 413 10 > 57.1 20 ZY75 70... 79 30 (<100) +8... 413 10 > 63.2 18 ZY82 77 ... 88 30 (<100) +8...4+13 10 >68.6 16 zyY91 85 ... 96 60 (<200) +9...413 5 >75.7 15 ZY100 94... 106 60 (<200) +9...+13 5 > 83.7 13 ZY110 104 ...116 80 (<250) +9...413 5 > 92.6 12 ZY120 114... 127 80 (<250) +9... 413 5 > 101.6 11 ZY130 124 ...141 110 (<300) +9... 413 5 > 110.5 10 | ZY150 138 ... 156 110 (<300) +9... +13 5 > 123 9 ZY160 153...171 - 150 (<350) +9...418 5 > 136 8.5 ZY180 168 ... 191 150 (<350) +9...413 5 > 149 8 ZY200 188 ... 212 150 (<350) +9...4+18 5 > 167 7.5 ) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. *) Tested with pulses tp = 20 ms. 3) The ZY1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be F instead of Z. Connect the cathode lead to the negative pole. ME 4682711 0004093 Te4 = 3ZY1...ZY200, ZY1S...ZY200S Breakdown characteristics T; = constant (pulsed) mA . ZY... 240 200 Iz 160 t 120 Test Curren I 80 40 0 0 1 2 3 4 5. 6 7 8 9 10 a} 12 3 14 iSV __ Vz Breakdown characteristics Tj = constant (pulsed) mA ZY ... 60 1 T zy 15 ZY 18 =25C ZY 22 50 IZ ZY 27 40 Test Current Iz ZY 33 30 | 25mA ZY 39 Peo -$|F- + 4 | ZY 47 20 | | |10mA 10 Lhe fio f fd , Lo) J 0 5 10 15 20 25 30 35 40 45 50 Vv _ Vz 4 ww souga2732 9004094 960ZY1...ZY200, ZY1S...ZY200S Breakdown characteristics Tj = constant (pulsed) mA ZY... 20 t i Tj =25C ZY 56 Iz ZY 68 ZY 82 Test Current Iz | |10mA ZY 100 10 --P-P +H ZY 120 SmA ZY 150 ' ZY 180 5 i -fat fot oi fj ZY 200 ; Jd. J 0 50 100 150 200 V Admissible power dissipation Dynamic resistance versus ambient temperature versus Zener current Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. W ZY... 2 2 \ 100 0 100 200 C 1 10 100 mA Tamb Iz 4682711 O004095 aT? me ZY1...ZY200, ZY1S...ZY200S Thermal differential resistance versus Zener voltage Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. X ZY... zth = Rina Vz Bp 1 10 102 103 V + V7 at specified Test Current J, Dynamic resistance versus Zener current n 2 102 rz 10 1 1 10 100mA Iz Dynamic resistance versus Zener current g ZY ... 103 7 ZY 180,200 150 102 ZY 120 ZY 100 ZY 82 ZY 68 ZY 56 10 Ql 1 10 mA + Iz : Change of Zener voltage from turn-on up to the point of thermal equilibrium versus Zener Voltage Vv ZY... 10 Vz =F ety Iz Iz7=25mA Vz 1 0 Qo 1 10 100 V _+ V7 at specified . Test Current I> 6 WH 4482731 COO4OIG 733ZY1...ZY200, ZY1S...ZY200S Relative change of Zener voltage versus turn-on time ZY... 1 lamb =25 C } Avy (ty? f 06 ] 04 / Q2 } Y) 0 va 1 10 102 103 s t Thermal resistance versus lead length K/W 100 90 80 Rina max. 70 a 60 typ. 50 || _t typ 40 30 20 0 5 10 5 20 25mm -_ lead length / Pulse thermal resistance versus pulse duration at a distance of 10 mm from case. K/W ZV... 100 Khu | On Valid provided that leads are kept at ambient temperature Difference between Zener voltage at test current pulses less than 1 s duration and Zener voltage at the point of thermal equilibrium versus Zener current v Ze tase 2100 mA ZY 82 ZY 68 ZY 56 ZY 47 39 1 10 100 mA MB 4682711 O004097 L7TZY1...ZY200, ZY1S...ZY200S Difference between Zener voltage at test current pulses less than 1 s duration and Zener voltage at the point of thermal equilibrium versus Zener current IZ test =50MA v 2 zy 15 ZY 12 ZY 10 1 10 100 mA o< Difference between Zener voltage at test current pulses less than 1 s duration and Zener voltage at the point of thermal equilibrium versus Zener current Fest =10mA 68 ZY 56 i 10 100 mA Difference between Zener voltage at test current pulses less than 1 s duration and Zener voltage at the point of thermal equilibrium versus Zener current Ttest = 25 mA u< ZY 33 Difference between Zener voltage at test current pulses less than 1 s duration and Zener voltage at the point of thermal equilibrium versus Zener current Iz test = 5mA ZY 200 ZY 180 1 10 100mA 8 me 482711 9004098 5Ob =