IXTK40P50P IXTX40P50P PolarPTM Power MOSFET VDSS ID25 = = RDS(on) - 500V - 40A 230m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 500 V VDGR TJ = 25C to 150C, RGS = 1M - 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA - 40 A - 120 A TC = 25C - 40 A EAS TC = 25C 3.5 J dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 20..120/4.5..27 1.13/10 N/lb. Nm/lb.in. 6 10 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Force Mounting Torque Weight PLUS247 TO-264 (PLUS247) (TO-264) G D (TAB) S PLUS247 (IXTX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z z International Standard Packages Rugged PolarPTM Process Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A - 500 VGS(th) VDS = VGS, ID = - 1mA - 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) z V - 4.0 V 100 nA TJ = 125C VGS = -10V, ID = 0.5 * ID25, Note 1 (c) 2009 IXYS CORPORATION, All Rights Reserved - 50 A - 250 A 230 m Easy to Mount Space Savings High Power Density Applications z z z z z High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99935B(03/09) IXTK40P50P IXTX40P50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 23 VDS = -10V, ID = 0.5 * ID25, Note 1 38 S 11.5 nF 1150 pF 93 pF 37 ns 59 ns 90 ns 34 ns 205 nC 55 nC 75 nC Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd TO-264 (IXTK) Outline 0.14 C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. - 40 A Repetitive, Pulse Width Limited by TJM - 160 A VSD IF = - 20A, VGS = 0V, Note 1 - 3.0 V trr QRM IRM IF = - 20A, -di/dt = -150A/s 477 14.5 - 61 VR = -100V, VGS = 0V PLUS 247TM (IXTX) Outline nS C A Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK40P50P IXTX40P50P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C -40 -100 VGS = -10V - 7V -35 VGS = -10V -90 -80 -30 ID - Amperes ID - Amperes -70 -25 - 6V -20 -15 - 8V -60 -50 -40 - 7V -30 -10 -20 -5 - 5V 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -9 -3 -6 -9 -12 -15 -18 -21 -24 -27 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. RDS(on) Normalized to ID = - 20A vs. Junction Temperature -40 -30 2.4 VGS = -10V - 7V -35 VGS = -10V 2.2 2.0 RDS(on) - Normalized -30 ID - Amperes - 6V -10 - 6V -25 -20 -15 1.8 I D = - 40A 1.6 I D = - 20A 1.4 1.2 1.0 -10 0.8 - 5V -5 0.6 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 20A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 -45 2.4 VGS = -10V 2.2 -40 TJ = 125C ID - Amperes RDS(on) - Normalized -35 2.0 1.8 1.6 1.4 -30 -25 -20 -15 1.2 -10 TJ = 25C 1.0 -5 0.8 0 0 -10 -20 -30 -40 -50 -60 ID - Amperes (c) 2009 IXYS CORPORATION, All Rights Reserved -70 -80 -90 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTK40P50P IXTX40P50P Fig. 7. Input Admittance Fig. 8. Transconductance -70 70 -60 60 -50 50 25C g f s - Siemens ID - Amperes TJ = - 40C -40 TJ = 125C 25C - 40C -30 40 -20 20 -10 10 0 -3.5 125C 30 0 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -10 -140 -9 VDS = - 250V -120 I D = - 20A -8 I G = -1mA -7 VGS - Volts IS - Amperes -100 -80 -60 TJ = 125C -40 -6 -5 -4 -3 TJ = 25C -2 -20 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 -4.0 20 40 60 80 100 120 140 160 180 200 220 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1,000.0 100,000 f = 1 MHz RDS(on) Limit 10,000 - 100.0 25s ID - Amperes Capacitance - PicoFarads Ciss Coss 1,000 100s - 10.0 1ms 10ms 100ms 100 - 1.0 Crss TJ = 150C DC TC = 25C Single Pulse 10 - 0.1 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. - 10 - 100 VDS - Volts - 1000 IXTK40P50P IXTX40P50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - C / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_40P50P(B9) 03-06-08-A