SGS-THOMSON MICROELECTRONICS TLS 106 SENSITIVE GATE SCR FEATURES LOW igts 200 pA a LOWlH< 5mA SKK HRMS) =4A a DESCRIPTION K The TLS 106 Silicon Controlled Rectifiers are high A performance MESA diffused PNPN devices glass @ passivated sensitive gate technology. These parts are intended to general purpose TL switching and phase control application. (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Th= 25C 4 A (180 conduction angle) HT(AV) Average on-state current Tl= 25C 2.5 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current ip = 8.3 ms 37 A ( Tj initial = 25C ) ip = 10 ms 35 i2t {2t value tp = 10 ms 6 Aes di/dt Critical rate of rise of on-state current 100 Alus Gate supply: IG=10mA diG/dt = 0.1 Ajus Tstg Storage and operating junction temperature range - 40 to+ 150 C Tj - 40 to+110 C Ti Maximum lead temperature for soldering during 4s at 4.5 mm 230 C from case Symbol Parameter TLS 106- Unit 05 1 2 4 6 VDRM Repetitive peak off-state voltage 50 100 200 400 600 Vv VRRM Tj= 110C RGK=1Ka March 1995 14 mp 2929237 0075949 4he WM TLS 106 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) |Junction to ambient on printed circuit with Cu surface icm2 50 CWW Rth (-l) DC | Junction to leads for DC 15 C/W GATE CHARACTERISTICS (maximum values) PG (AV) = 0.2W -PGM = 3W (tp = 20 ps) IFGM = 1.2A (tp = 20 ps) VRGM = 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V (DC) RL=1400 Tj=25C | MAX 0.2 mA VGT Vp=12V. (DC) RL=1400 Tj=25C MAX 1 V VG@D VD=VDRM AL=3.3kQ RGK =1kQ Tj= 110C | MIN 0.1 Vv tgt VD=VDRM IG=10mA Tj=25C TYP 1.5 BS dic/dt = 0.1A/us I Ig=1mA AgK =1kQ Tj=25C | MAX 7 mA IH Ir= 50mMA_ REK =1kQ Tj=25C | MAX 5 mA VIM ITM= 4A tp= 380us Tj=25C | MAX 1.9 Vv IDRM VprRM Rated ReK =1ka Tj=25C MAX 0.01 mA IRRM VARM Rated RGK =1kQ Te 110C 03 dVidt Linear slope up to Vp=67%VpRM Tj= 110C MIN 10 V/us RGK =1kQ) CGK =0.1nF tq VD=67%VDRM ITM=4A_ VRe= 10V Tj= 110C TYP 100 HS dit/dt=10 Aus = dVp/dt= 2Vius RGK =1kQ &y7, SS:THOMSON > ARSIROB LECT RARE me 7929237 0075950 164 om Fig.1 : Maximum average power dissipation versus average on-state current. P (W) 7 . 360" do Y 5{ if L DC | 4 LL) + Qi 180 | a ALLA > 120 agen 2 7, = Q- 60 | a 30" Irtav) (A) | o O85 1 16 2 25 3 35 4 Fig.3 : Average on-state current versus leads temperature. cay) (4) 5 4 ~~ PN bc 3 <] ~ PA | Th PS +180" mA] 1 PRS Tlead ("C) Oo Qa 10 20 30 40 50 60 70 80 80 100110120 Fig.5 : Relative variation of gate trigger current versus junction temperature. IgtiTjl - IntTjl . igthtj-25C) = thi Tj=25C) 5 4.5 4 3.5 3 2.5 2 15 1 0.6 TiC) 0 -40-30-20-10 @ 10 20 30 40 60 60 70 50 90 100110 eel ROE STs TLS 106 Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tleaq). P (Ww) Tlead ('c) 7 1D 8 +20 5 P30 40 4 +60 3 +60 Rth j-a +70 2 +80 1 730 Tamb ("C) r 100 0 1 Q 20 40 60 80 100 120 140 Fig.4 : Thermal transient impedance junction to ambient versus pulse duration. Zth j-a (C/W) 50 40 J 30 AK 20 A 10 A +47] | t (8) seo 1.0E+00 1.0E+01 10E+02 1.0E+03 1LOE+04 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. Itsm (A) 40 TTT 1-1 Tj initial = 25C 30 = 20 HF PA 40 Ph Number of cycles } 0 | | | tet | 1 19 100 19090 3/4 THOMSON alligkss MM 7929237 0075951 010 a TLS 106 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width t < 10 ms, and corresponding value of I2t. Iysm (A). Vt (A's) Tj initial = 25C 100 10 Fig.8 : On-state characteristics (maximum values). I {A) 100 Tj initial 26C 10 += Tj max to = 112V Rt -0.180 0 Virm(v) 1 2 3 4 8 7 8 PACKAGE MECHANICAL DATA TL Plastic REF. DIMENSIONS D A > Millimeters Inches E Min. Max. Min. Max. A 9.55 | 10.05 | 0.375 | 0.396 B 7.55 | 8.05 | 0.297 | 0.317 F B c | 12.70 0.500 ] D 425 | 4.75 | 0.167 | 0.187 i G E 125 | 1.75 | 0.049 | 0.069 F 6.75 | 7.25 | 0.266 | 0.285 c ' G 4.50 0.177 H 204 | 3.04 | 0.80 | 0.120 1 i 0.75 | 0.85 | 0.029 | 0.033 Marking : type number Weight : 0.8 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent tights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 7 SGS-THOMSON ANGROB. BETES Me 79e9e3? 0075952 15?