To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3
File N umber
HGTG40N60B3
70A, 600V, UFS Serie s N- Channel IGBT
The HGTG40N60B3 is a MOS gated high voltage switching
de vic e com bining th e b est f e atures of MO SFETs a nd bip olar
transistors. The devi ce has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power su ppl ies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49052.
Symbol
Features
• 70A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC
• Short Circui t Rating
• Low Conduction Loss
Packaging JEDEC STYLE T O- 247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG40N60B3 TO-247 G40N60B3
NOTE: When ordering, use the entire part number .
C
E
G
G
C
E
COLLECTOR
(FLANGE)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S . PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet November 2004
©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3
S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG40N60B3 UNITS
Collect o r to Em itter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 70 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A
Collector Current Pulsed (Note 1 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 330 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe O perating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD290 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.33 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 2µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
CAUTION: Str esses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125 oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter to Collector Breakdown Voltage BVECS IC = - 10mA , VGE = 0V 20 - - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 100 µA
VCE = BVCES TC = 150oC--6.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110,
VGE = 15V TC = 25oC-1.42.0V
TC = 150oC-1.52.3V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 3.0 4.8 6.0 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±100 nA
Switching SOA SSOA TJ = 150oC
RG = 3Ω
VGE = 15V
L = 100µH
VCE = 480V 200 - - A
VCE = 600V 100 - - A
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES -7.5- V
On-State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVCES VGE = 15V - 250 330 nC
VGE = 20V - 335 435 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode Both at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 100µH
Test Circuit (Figure 17)
-47- ns
Current Rise Time trI -35- ns
Current Turn-Off Delay Time td(OFF)I - 170 200 ns
Current Fall Time tfI - 50 100 ns
Turn-On Energy EON - 1050 1200 µJ
Turn-Off Energy (Note 1) EOFF - 800 1400 µJ
HGTG40N60B3
©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3
Current Turn-On Delay Time td(ON)I IGBT and Diode Both at TJ = 150 oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 100µH
Test Circuit (Figure 17)
-47- ns
Current Rise Time trI -35- ns
Current Turn-Off Delay Time td(OFF)I - 285 375 ns
Current Fall Time tfI - 100 175 ns
Turn-On Energy EON - 1850 - µJ
Turn-Off Energy (Note 1) EOFF - 2000 - µJ
Thermal Resistance Junction To Case RθJC - - 0.43 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves (Unless Otherwise Specified)
FIGURE 1. DC COLLECT OR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERA TING FREQUE NCY vs COLLECT OR T O
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
25 50 75 100 125 150
20
0
40
60
80
100
PA CKAGE LIMITED
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
250
700
150
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
100
300 400200
100 500 600
200
0
TJ = 150oC, RG = 3Ω, VGE = 15V
fMAX, OPERATING FREQUENCY (kHz)
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20 40 60 100
1
100 TCVGE
110oC10V
110oC15V
10V
75oC15V
75oC
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.43oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON + EOFF)
TJ = 150oC, RG = 3Ω, L = 100µH, VCE = 480V
80
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 13 14 15
4
6
8
10
14
16
12
18
200
300
400
500
600
700
800
900
tSC
ISC
VCE = 360V, RG = 3Ω, TJ = 125oC
HGTG40N60B3
©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTO R T O
EMITTER CURRENT
Typical Performance Curves (Unless Otherwise Specified) (Continued)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
TC = -55oCTC = 150oC
TC = 25oC
012345
VCE, COLLECTOR TO EMITTER VOLTAG E (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
150
200 DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
TC = 150oC
TC = -55oC
TC = 25oC
01234
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
50
100
150
200
EON, TURN-ON ENERGY LOSS (mJ)
20
12
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
16
8
4
080604020
RG = 3Ω, L = 100µH, VCE = 480V
TJ = 150oC, VGE = 15V
TJ = 25oC, VGE = 15V
TJ = 150oC, VGE = 10V
TJ = 25oC, VGE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
100
2
4
6
8
080604020
RG = 3Ω, L = 100µH, VCE = 480V
TJ = 150oC; VGE = 10V AND 15V
TJ = 25oC; VGE = 10V AND 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
30 4020 60 80 100
40
50
60
70
80
90 RG = 3Ω, L = 100µH, VCE = 480V
TJ = 25oC, VGE = 10V
TJ = 150oC, VGE = 10V
TJ = 150oC, VGE = 15V
TJ = 25oC, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI,RISE TIME(ns)
20
100
300
200
400
500
0
600
40 60 80 100
TJ = 25oC, VGE = 10V
TJ = 25oC AND 150oC,
VGE = 10V AND 15V
RG = 3Ω, L = 100µH, VCE = 480V
TJ = 150oC, VGE = 10V
HGTG40N60B3
©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECT OR T O EMITT ER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves (Unless Otherwise Specified) (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
td(OFF)I, TURN-OFF DELAY TIME (ns)
40 60 80 100
100
150
200
250
300 RG = 3Ω, L = 100µH, VCE = 480V
TJ = 25oC, VGE = 15V
TJ = 25oC, VGE = 15V
TJ = 150oC, VGE = 10V
TJ = 150oC, VGE = 1 5V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns )
20 40 60 80 100
20
60
100
140
180 RG = 3Ω, L = 100µH, VCE = 480V
TJ = 150oC, VGE = 10V AND 15V
TJ = 25oC, VGE = 10V AND 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
40
80
120
160
200
57891046
VGE, GATE TO EMITTER VOLTAGE (V)
TC = 150oCTC = -55oC
TC = 25oC
DUTY CYCLE = <0.5%, VCE = 10V
PULSE DURATION = 25µs
QG, GATE CHARGE (nC)
200
0
12
15
9
6
3
010050 150 250 300
Ig(REF) = 3.255mA, RL = 7.5Ω, TC = 25oC
VCE = 600V
VCE = 200V
VCE = 400V
VGE, GATE TO EMITTER VOLTAGE (V)
CRES
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
2
C, CAPACITANCE (nF)
CIES
COES
FREQU EN CY = 400kH z
4
6
8
10
12
14
HGTG40N60B3
©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORM
Typical Performance Curves (Unless Otherwise Specified) (Continued)
10-5 10-3 10-2 10-1 100101
10-4
t1, RECTANGULAR PULSE DURATION (s)
10-1
ZθJC, NORMALIZED THERMAL IMPEDANCE
0.5
SINGLE PULSE
0.01
0.1
0.05
0.02
t2
PD
t1
PEAK TJ = (PD X ZθJC X RθJC) + TC
DUTY FACTOR, D = t1 / t2
100
10-2
0.2
RG = 3Ω
L = 100µµH
VDD = 480V
+
-
RHRP3060
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTG40N60B3
©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
bui lt in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are cu rrently being extensively
used in production b y nume rous equipment m anuf acturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to a ssemb ly into a c ircui t, all l eads sho uld be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When de vice s are remov ed by hand from thei r carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices sho uld n e v er b e ins erted in to or r emo v ed from
circuits with power on.
5. Gate Voltage Rating - Nev er e xc eed the gate- vol tage
rating of VGEM. Exceeding the rated V GE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of thes e de vices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an e xternal Zener is recommended.
Operating Frequency Information
Operating frequency infor mation for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the inf o rmatio n shown fo r a typical unit in Fi gures 5, 6, 7 , 8, 9
and 10. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowab le dissipation (PD) is defined by PD=(T
JM -T
C)/RθJC.
The sum of device switching and con duc ti on lo sses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the condu cti on lo sse s (PC ) are ap pr oximated by
PC=(V
CE xI
CE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 18. EON is the integral of the inst antaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
HGTG40N60B3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
Rev. I13
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
F ACT Quiet Series™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART ST ART™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
VCX™
Across the board. Around the world.™
The Power Franchise
Programmable Active Droop™
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
