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Is Now Part of
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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RS1A - RS1M — Fast Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RS1A - RS1M Rev. 1.2.1 1
October 2013
RS1A - RS1M
Fast Rectifiers
Features
• Glass-Passivated Junction
• For Surface Mounted Applications
• Built-in Strai n Relief, Ideal for Automated Placement
• UL Certif ie d: Certificate # E3262 43
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Marking Package Packing Method
RS1A RS1A
DO-214AC Tape and Reel
RS1B RS1B
RS1D RS1D
RS1G RS1G
RS1J RS1J
RS1K RS1K
RS1M RS1M
Symbol Parameter Value Units
1A 1B 1D 1G 1J 1K 1M
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 80 0 1000 V
IF(AV) Average Rectified Forward Current
at TA = 100 °C 1.0 A
IFSM Non-Repetitive Peak Forward Surge
Current: 8.3 ms Single Half-Sine Wave 30 A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperatu r e -55 to +150 °C
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
RS1A - RS1M — Fast Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RS1A - RS1M Rev. 1.2.1 2
Thermal Characteristics(1)
Note:
1. Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units
PDPower Dissipation 1.19 W
RθJA Thermal Resistance, Junction to Ambient(1) 105 °C/W
RθJL Thermal Resistance, Junction to Lead(1) 32 °C/W
Symbol Parameter Teat Conditions Value Units
1A 1B 1D 1G 1J 1K 1M
VFForward Voltage 1.0 A 1.3 V
trr Reverse-Recovery
Time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A 150 250 500 ns
IRReverse Current at
Rated VR TA=25°C5.0μA
TA=125°C50μA
CTTotal Capacitance VR = 4.0 V,
f = 1.0 MHz 10 pF
RS1A - RS1M — Fast Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RS1A - RS1M Rev. 1.2.1 3
Typical Performance Characteristics
Figure 1. Forward Cur rent Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Charact e ristics Figure 4. Reverse Current vs. Reverse Voltage
Figure 5. Total Capacitance
0 25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
RESISTIVE OR
INDUCTIVE LOAD
P. C . B . M O U N TE D
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
CO PPER PAD AREAS
12 51020 50100
0
5
10
15
20
25
30
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Width = 300μ
μμ
μs
2% Duty Cycle
T = 25 C
º
A
T = 125 C
º
A
0 20406080100120140
0.001
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [ uA ]
T = 25 C
º
A
T = 100 C
º
A
T = 125 C
º
A
1 2 5 10 20 50 100
1
5
10
20
50
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
RS1A - RS1M — Fast Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RS1A - RS1M Rev. 1.2.1 4
Physical Dimension
Figure 6. 2-LEAD, SMA, JEDEC DO-214, VARIATION AC (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/DO/DO214AC.pdf.
1.75
2.65
4.30
2.70 MAX
2.20
1.90
0.30
0.05
2.05
1.95
B0.203
0.050
A
0.13 MC B A
C
2.95
2.50 B1.65
1.20
B5.60
4.80
B4.75
4.00
0.13 MC B A
B
A
0.41
0.15
1.52
0.75
R0.15 4X
8°
0°
0.45
0 -8°
DETAIL A
SCALE 20 : 1
LAND PATTERN RECOMMENDATION
GAUGE
PLANE
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
JEDEC DO214 VARIATION AC.
BDOES NOT COMPLY JEDEC STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. LAND PATTERN STD. DIOM5025X231M.
G. DRAWING FILE NAME: DO214ACREV1
DO-214AC
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I66
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