NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H945 APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 T stg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.......................................150 PC----Collector Dissipation.......................................250mW 1EmitterE 2CollectorC 3BaseB VCBO----Collector-Base Voltage....................................60V VCEO----Collector-Emitter Voltage.................................50V V EB O ----Emitter-Base Voltage....................................5V I C ----Collector Current..........................................150mA ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Min Typ Max Test Conditions Unit BVCBO Collector-Base Breakdown Voltage 60 V IC=100A, IE=0 BVCEO Collector-Emitter Breakdown Voltage 50 V IC=100A, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=100AIC=0 DC Current Gain 90 HFE 600 VCE=6V, IC=1mA VCE(sat) Collector- Emitter Saturation Voltage 0.3 V IC=100mA, IB=10mA VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=10mA ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 fT Cob Current Gain-Bandwidth Product NF Output Capacitance 250 3.0 MHz pF Noise Figure 4.0 dB VCE=6V, IC=10mA VCB=6V, IE=0f=1MHz VCE=6V,IC=0.5mAf=1KHz Rs=500 hFE Classification R Q P 90--180 135--270 200--400 K 300--600 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H945