Shantou Huashan Electronic Devices Co.,Ltd.
█ APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions
BVCBO Collector-Base Breakdown Voltage 60 V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage 50 V IC=100μA, IB=0
BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0
HFE DC Current Gain 90 600
VCE=6V, IC=1mA
VCE(sat) Collector- Emitter Saturation Voltage 0.3 V
IC=100mA, IB=10mA
VBE(sat) Base-Emitter Saturation Voltage 1.0 V
IC=100mA, IB=10mA
ICBO Collector Cut-off Current 100 nA
VCB=60V, IE=0
IEBO Emitter Cut- off Current 100 nA
VEB=5V, IC=0
fT Current Gain-Bandwidth Product 250 MHz
VCE=6V, IC=10mA
Cob Output Capacitance 3.0 pF
VCB=6V, IE=0，f=1MHz
NF Noise Figure 4.0 dB
VCE=6V,IC=0.5mA，f=1KHz，
Rs=500Ω
█ hFE Classification
R Q P K
90—180 135—270 200—400 300—600
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………250mW
VCBO——Collector-Base Voltage………………………………60V
VCEO——Collector-Emitter Voltage……………………………50V
VEBO——Emitter-Base Voltage………………………………5V
IC——Collector Current……………………………………150mA
1―Emitter，E
2―Collector，
C
3―Base，B
TO-92
H945
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H945
NPN S I L I C O N T R A N S I S T O R
