2SA1417 / 2SC3647
No.2006-1/5
Features
•Adoption of FBET, MBIT processes.
•High breakdown voltage and large current capacity.
•Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.
Specifications ( ) : 2SA1417
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)120 V
Collector-to-Emitter Voltage VCEO (--)100 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)2 A
Collector Current (Pulse) ICP (--)3 A
Collector Dissipation PC500 mW
Mounted on a ceramic board (250mm2✕0.8mm) 1.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)100V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE VCE=(--)5V, IC=(--)100mA 100* 400*
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)100mA 120 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (25)16 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)100mA
(--0.22)0.13
(--0.6)0.4 V
Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)100mA (--)0.85 (--)1.2 V
Continued on next page.
* ; The 2SA1417 / 2S3647 are classified by 100mA hFE as follws:
Rank R S T
hFE 100 to 200 140 to 280 200 to 400
Marking 2SA1417: A C
2SC3647: CC
Ordering number : EN2006C
80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS
2SA1417 / 2SC3647
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SA1417 / 2SC3647
No.2006-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--)120 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)100 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)6 V
T urn-On Time ton See specified Test Circuit. (80)80 ns
Storage Time tstg See specified Test Circuit. (750)1000 ns
Fall Time tfSee specified Test Circuit. (40)50 ns
Package Dimensions Switching Time Test Circuit
unit : mm
7007A-004
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
123
1.5
0.75
Top View
Bottom View
VRRB
VCC=50VVBE= --5V
++
50Ω
INPUT
OUTPUT
RL
100µF 470µF
PW=20µsIB1
D.C.≤1% IB2
10IB1= --10IB2=IC=0.7A
For PNP, the polarity is reversed.
IC -- VCE IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
ITR03542
0--2--1 --4--3 --5 214350
0
--0.4
--0.8
--1.2
--1.6
--2.0
0.4
0.8
1.2
1.6
2.0
0
ITR03543
--20mA
--30mA
--10mA
--5mA
--3mA
--2mA
--1mA
IB=0mA
2SA1417 2SC3647
IB=0mA
20mA
30mA
50mA
40mA
10mA
5mA
3mA
2mA
1mA
--40mA
2SA1417 / 2SC3647
No.2006-3/5
ITR03551
ITR03550
2
0.01 5773
0.1 257323
1.0
10
100
2
3
2
3
5
7
2
1.0 5773 2 2
10 573100
10
100
2
3
5
7
3
5
7
ITR03549
ITR03548
ITR03546
--
5
--
7
--
7
--
3
--
2
--
0.01
--
0.1
--
5
--
7
--
3
--
2
--
3
--
2
--
1.0
--
0.8
--
0.4
0
--
1.2
--
1.6
--
2.4
--
2.0
0.8
0.4
0
1.2
1.6
2.4
2.0
100
1000
5
7
3
2
5
7
3
100
1000
5
7
3
2
5
7
357732
0.01 0.1 573232
1.0
--
0.6
--
0.8
0
--
0.4
--
0.2
--
1.0
--
1.2 0.6 0.8
00.40.2 1.0 1.2
ITR03547
2SA1417
VCE=
--5V 2SC3647
VCE=5V
2SA1417
VCE= --5V 2SC3647
VCE=5V
--
25°C
25°C
Ta=75°C
--25°C
25
°C
Ta=75°C
--
25
°C
25°C
Ta=75°C
--
25°C
25
°C
Ta=75°C
2SA1417
2SC3647
2SA1417
2SC3647
2SA1417 / 2SC3647
VCE=10V 2SA1417 / 2SC3647
f=
1MHz
0
--0.2
--0.6
--0.4
--0.8
--1.0
0.2
0.6
0.4
0.8
1.0
010 20 30 40 500
ITR03545
ITR03544
--
40
--
30
--
50
--
10
--
20
0
2SC3647
IB=0mA
2SA1417
--6mA
--5mA
--4mA
--3mA
--2mA
--1mA
IB=0mA
0.5mA
2.5mA
3.0mA
3.5mA
4.0mA
2.0mA
1.5mA
1.0mA
hFE -- IChFE -- IC
IC -- VBE
IC -- VBE
Cob -- VCB
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
DC Current Gain, hFE
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
IC -- VCE IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
4.5mA
5.0mA
For PNP minus sign is omitted.
For PNP minus sign is omitted.
fT -- IC
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
2SA1417 / 2SC3647
No.2006-4/5
IT10757
0
0.2
0.4
0.5
0.6
0.8
1.8
1.6
1.4
1.5
1.2
1.0
0 20 80 1006040 160140120
2SA1417 / 2SC3647
ITR03554
--1.0
3
--10
5
7
5
7
3
2
0.01
3
0.1
5
7
7
5
2
3
1.0
5
5
7
2
3
2
7--0.01 --0.1
5732 --1.0
573232
1.0
3
10
5
7
5
7
3
2
70.01 0.1
5732 1.0
573232
71.0
5322
ITR03555
ITR03556
710
5327
100
5
ICP=3A
IC=2A
1ms
10ms
100
m
s
DC operation
25
°C
Ta=
--
25°C
75°C
2SC3647
IC / IB=10
2SA1417
IC / IB=10
25
°C
Ta=
--
25°C
75°C
2
--0.01 --0.1
5773 2--1.0
57323 2
0.01 0.1
5773 2 1.0
57323
--1000
--100
--10
2
3
5
7
2
3
5
7
ITR03552
100
10
2
3
5
7
1000
2
3
5
7
ITR03553
2SC3647
IC / IB=10
2SA1417
IC / IB=10
--25°C
25
°C
Ta=75°C
--25°C
25
°C
Tc=75°C
2SA1417 / 2SC3647
VBE(sat) -- ICVBE(sat) -- IC
VCE(sat) -- IC
VCE(sat) -- IC
Collector Current, IC -- A Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
A S O
For PNP minus sign is omitted.
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Mounted on a ceramic board (250mm
2
✕0.8mm)
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
Infinite heat sink
2SA1417 / 2SC3647
No.2006-5/5PS
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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In the event that any or all SANYO Semiconductor products (including technical data,services) described
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of February , 2006. Specifications and information herein are subject
to change without notice.
