BUL1203EFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■HIGH VOLTAGE CAPABILITY
■LOW SPREAD OF DYNAMIC PARAMETERS
■MINIM UM LO T- TO- LO T SPR E AD FO R
REL IABLE OPERATIO N
■VERY HIGH SWITCHING SPEED
■FULLY INS ULAT E D PA CKAG E (U. L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
■ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION
The BUL1203EFP is a new device manufac tured
using Diffused Collector technology to enhance
switching speeds and tight hFE range while
mainta ining a wide RBSO A .
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in t ypical converters
for lamp ballast.
®
INTERNAL SCHEMATI C DI AG RAM
November 2003
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCBO Collector-BaseVoltage (IE = 0) 1200 V
VCES Collector-Emitter Voltage (VBE = 0) 1200 V
VCEO Collector-Emitter Voltage (IB = 0) 550 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 5 A
ICM Collector Peak Current (tp < 5 ms) 8 A
IBBase Current 2 A
IBM Base Peak Current (tp < 5 ms) 4 A
Ptot Total Dissipation at Tc = 25 oC36W
V
isol Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink 1500 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220FP
1/7