© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 12 1Publication Order Number:
MBR2045CT/D
MBR2045CTG,
MBRF2045CTG
Switch-mode
Power Rectifier
Features and Benefits
•Low Forward Voltage
•Low Power Loss / High Efficiency
•High Surge Capacity
•175°C Operating Junction Temperature
•20 A Total (10 A Per Diode Leg)
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Power Supply − Output Rectification
•Power Management
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94, V−0 @ 0.125 in
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•ESD Rating: Human Body Model = 3B
Machine Model = C
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 45 VOLTS
1
3
2, 4
TO−220AB
CASE 221A
STYLE 6
3
4
12
See detailed ordering and shipping information on page 3 o
f
this data sheet.
ORDERING INFORMATION
TO−220
FULLPAK]
CASE 221AH
3
12
See general marking information in the device marking
section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
MBR2045CTG, MBRF2045CTG
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2
TO−220AB
Figure 1. Marking Diagrams
AYWW
MBR2045CTG
AKA
TO−220 FULLPAK
AYWW
B2045G
AKA
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Diode Polarity
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
Per Device
Per Diode (TC = 165°C)
IF(AV) 20
10
A
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC = 163°C) IFRM 20 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
See Figure 13 IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance
(MBR2045CTG) − Junction−to−Case
− Junction−to−Ambient
(MBRF2045CTG) − Junction−to−Case
− Junction−to−Ambient
RqJC
RqJA
RqJC
RqJA
2.0
60
4.75
75
°C/W
MBR2045CTG, MBRF2045CTG
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3
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Instantaneous Forward Voltage (Note 2)
(iF = 10 A, TJ = 125°C)
(iF = 20 A, TJ = 125°C)
(iF = 20 A, TJ = 25°C)
vF−
−
−
0.50
0.67
0.71
0.57
0.72
0.84
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR−
−10.4
0.02 15
0.1
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
ORDERING INFORMATION
Device Order Number Package Type Shipping†
MBR2045CTG TO−220
(Pb−Free) 50 Units / Rail
MBRF2045CTG TO−220FP
(Pb−Free) 50 Units / Rail
Figure 1. Typical Forward Voltage
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150°C
Figure 2. Maximum Forward Voltage
0.2
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.00.0
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150°C
0.2
125°C
25°C
125°C
25°C
0.70.3 0.5 0.9 1.10.1
MBR2045CTG, MBRF2045CTG
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4
5.0 150
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
0.1
0.01
0.001
10
, REVERSE CURRENT (mA)IR
20 3025
100
35 40 5045
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
TJ = 150°C
125°C
100°C
75°C
25°C
5.0 150
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
0.1
0.01
0.0001
10
, REVERSE CURRENT (mA)IR
20 3025
100
35 40 5045
TJ = 150°C
125°C
100°C
25°C
140
TC, CASE TEMPERATURE (°C)
10
8.0
6.0
2.0
0
145
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
150 155
18
160 165
Figure 5. Maximum Surge Capability Figure 6. Current Derating, Case, Per Leg
40
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
16
10
8
4
08
, AVERAGE FORWARD POWER DISSIPATION (WATTS)PF(AV)
12 2016
28
24 3028
Figure 7. Current Derating, Ambient, Per Leg Figure 8. Forward Power Dissipation
16
14
12
6
2
18
14
12
dc
TJ = 175°C
SQUARE
WAVE
dc
SQUARE
WAVE
NUMBER OF CYCLES AT 60 Hz
101.0
200
100
50
30
20
3.02.0 100
70
IFSM, PEAK HALF-WAVE CURRENT (AMPS)
7.05.0 3020 7050
0.001
4.0
TA, AMBIENT TEMPERATURE (°C)
250
12
8.0
4.0
0
50
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
75 175
dc
14
10
6.0
2.0
100 125
SQUARE WAVE
dc
RqJA = 16°C/W
(With TO-220 Heat Sink)
RqJA = 60°C/W
(No Heat Sink)
150
16
18
20
170 175 180
20
22
24
26
2 6 10 1814 22 26
MBR2045CTG, MBRF2045CTG
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5
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01 0.1 1.0 10 100
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
Ppk Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
1000
Figure 9. Thermal Response for MBR2045CT
0.07
0.7
Figure 10. Thermal Response Junction−to−Ambient for MBRF2045CT
0.1
100
0.001
1.0 10 100 1000
0.1
0.000001
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
0.2
0.02
1.0
0.01
0.010.0010.00010.00001
10
R(t), TRANSIENT THERMAL RESISTANCE
t1, TIME (sec)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
R(t), TRANSIENT THERMAL RESISTANCE
Figure 11. Thermal Response Junction−to−Case for MBRF2045CT
t1, TIME (sec)
0.1
10
0.001
1.0 10 100 1000
0.1
0.000001
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
0.2
0.02
1.0
0.01
0.010.0010.00010.00001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
MBR2045CTG, MBRF2045CTG
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6
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored char ge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
2.0 ms
1.0 kHz
12 V 100
VCC 12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 kW
+150 V, 10 mAdc
4.0 mF
+
VR, REVERSE VOLTAGE (VOLTS)
1000
500
300
0
050
700
C, CAPACITANCE (pF)
Figure 12. Typical Capacitance
10 20 30
200
40
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
TJ = 25°C
f = 1 MHz
100
600
400
800
900
MBR2045CTG, MBRF2045CTG
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7
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
MBR2045CTG, MBRF2045CTG
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8
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
DIM MIN MAX
MILLIMETERS
D14.70 15.30
E9.70 10.30
A4.30 4.70
b0.54 0.84
P3.00 3.40
e
L1 --- 2.80
c0.49 0.79
L12.50 14.73
b2 1.10 1.40
Q2.80 3.20
A2 2.50 2.90
A1 2.50 2.90
H1 6.60 7.10
E
Q
L1
b2
e
D
L
P
123
b
SEATING
PLANE
AA1
H1
A2
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
2.54 BSC
M
0.14 M
A
A
B
C
E/2
M
0.25 M
AB
3X
C
3X
B
NOTE 3
FRONT VIEW SIDE VIEW
SECTION D−D
ALTERNATE CONSTRUCTION SECTION A−A
ANOTE 6
A
DD
NOTE 6
H1
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UBLICATION ORDERING INFORMATION
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MBR2045CT/D
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