®
TMBYV 10-40
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
Metal to silicon rectifier diodes in glass case featur-
ing very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
August 1999 Ed: 1A
MELF
(Glass)
Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 40 V
IF (AV) Av erage Forward Current Ti = 60 °C1A
I
FSM Surge non Repetitive Forward Current Ti = 25 °C
tp = 10ms 25
Sinusoïdal Pulse A
Ti = 25 °C
tp = 300µs50
Rectangular Pulse
Tstg
TjS torage and Junction Temperature
Range - 65 to 150
- 65 to 125 °C
°C
TLMaximum Lead Temperature for Soldering during 15s 260 °C
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
Rth (j - l) Junction-leads 110 °C/W
* Pulse test: tp ≤ 300µs δ < 2%.
THERMAL RESISTAN CE
1/4
2/4
Synbol Test Conditions Min. Typ. Max. Unit
IR*Tj = 25°CVR = VRRM 0.5 mA
Tj = 100°C 10
VF*I
F
= 1A Tj = 25°C 0.55 V
I
F
= 3A 0.85
* * Pulse test: tp ≤ 300µs δ < 2%.
ELECTRICAL CHARACTERISTICS
STATIC CHARACT ERIS TICS
Symbol Test Conditions Min. Typ. Max. Unit
CTj = 25°C V
R = 0 220 pF
DYNAMIC CHARACTERISTICS
Forward current flow in a Schottky rectifier is due
to majority c arrier conduction. S o r ever se recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
Fig. 1 : Forward current versus forward voltage
at low level (typical values). Fig. 2 : Forward current versus forward voltage
at high level (typical values).
TMBYV10-40
Fig. 3 : Reverse current versus junction
temperature. Fig. 4 : Reverse current versus VRRM in per
cent.
Fig. 5 : Capacitance C versus reverse applied
voltage VR (ty pical values) Fig. 6 : Surge non repetitive forward current for
a rectangular pulse with t â 10 ms.
3/4
TMBYV10-40
4/4
Fig. 7 : Surge non repetitive forward current
versus number of cycles.
Cool i ng method: by con vec tion and conduc tion
Mar ki ng: ring at cathode end.
Weight: 0.139g
OR DE RING CODE : TMBYV10-40 F IL M
FOOT PRINT DIMENSIONS (Millimeter)
PACKAGE MECHANICAL DATA
MELF Glass
B
O
/
A
C
C
D
O
/
4
6.5
3
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.80 5.20 0.189 0.205
∅ B2.50 2.65 0.098 0.104
C 0.45 0.60 0.018 0.024
∅ D2.50 0.098
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the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.
Specifications mentioned in this publicat ion are subject to change without no tice. This publication superse des and replaces
all information previously supplied.
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TMBYV10-40
