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MP03 XXX 275 Series
Code Circuit
HBT
HBP
HBN
MP03/275 - 22
MP03/275 - 20
MP03/275 - 18
MP03/275 - 16
277
234
A
A
216 A
Tcase = 75oC
Theatsink = 75oC
Theatsink = 85oC
Tcase = 85oC
Tcase = 75oC
IT(RMS) RMS value
A181
A
430
Mean on-state current Halfwave, resistive load
IT(AV)
2200
2000
1800
1600
T(vj) = 125oC
IDRM = IRRM = 30mA
VDSM & VRSM =
VDRM & VRRM+ 100V
respectively
Module type code: MP03.
See Package Details for further information.
FEATURES
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (non-toxic) Isolation Medium
APPLICATIONS
■ Motor Control
■ Controlled Rectifier Bridges
■ Heater Control
■ AC Phase Control
CURRENT RATINGS - PER ARM
KEY PARAMETERS
VDRM 2200V
ITSM 8100A
IT(AV) (per arm) 277A
Visol 2500V
PACKAGE OUTLINE
ParameterSymbol Conditions Max. Units
CIRCUIT OPTIONS
Lower voltage grades available.
For full description of part number see "Ordering instructions"
on page 3.
VOLTAGE RATINGS
Type
Number Repetitive
Peak
Voltages
VDRM VRRM
Conditions
MP03 XXX 275 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4481-4.0 DS4481-5.0 January 2000
2/10
MP03 XXX 275 Series
kA
VR = 0
VR = 50% VRRM
VR = 0
VR = 50% VRRM A2s
8.1
Thermal resistance - case to heatsink
per thyristor or diode
3 phase
Peak reverse and off-state current
From 67% VDRM to 500A
Gate source 10V, 5Ω
Rise time 0.5µs, Tj =125oC
rT
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
kA
6.5
0.32 x 106A2s
0.21 x 106
10ms half sine;
Tj = 125˚C
10ms half sine;
Tj = 125˚C
Surge (non-repetitive) on-state current
ITSM
I2t for fusing
I2t
dc
Thermal resistance - junction to case
per Thyristor or Diode halfwave
Rth(j-c)
Rth(c-hs) Mounting torque = 5Nm
with mounting compound
Tvj Virtual junction temperature Off-state (Blocking)
Tstg Storage temperature range
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Isolation voltageVisol
0.12 oC/W
oC/W
0.13
2.5 kV
-40 to 125 oC
oC125
0.05 oC/W
0.14 oC/W
At 1000A, Tcase = 25oC - See Note 1 1.65 V
At VRRM/VDRM, Tj = 125oC30mA
To 67% VDRM Tj = 125oC 200* V/µs
100 A/µs
0.93 VAt Tvj = 125oC - See Note 1
0.67 mΩ
At Tvj = 125oC - See Note 1On-state slope resistance
VT(TO) Threshold voltage
Rate of rise of on-state current
dI/dt
Linear rate of rise of off-state voltagedV/dt
IRRM/IDRM
On-state voltage
VTM
Symbol Parameter Conditions Max. Units
Symbol Parameter Conditions Max. Units
Symbol Parameter Conditions Max. Units
SURGE RATINGS - PER ARM
THERMAL & MECHANICAL RATINGS
DYNAMIC CHARACTERISTICS- THYRISTOR
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MP03 XXX 275 Series
Part number is made up of as follows:
MP03 HBT 275 - 20
MP = Pressure contact module
03 = Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
275 = Nominal average current rating at Tcase = 75oC
20 = VRRM/100
NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
Gate non-trigger voltage
V
3.0
0.25
mA
V
VGD
Gate trigger voltage
150
VGT
IGT Gate trigger current
At VDRM Tcase = 25oC
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
-
-
-
V
30
0.25 V
VRGM Peak reverse gate voltage V5.0
-
A
-
-
-
10
IFGM Peak forward gate current
Peak forward gate voltage
VFGM
VFGN Peak forward gate voltage
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
PGM
PG(AV)
Peak gate power
Mean gate power
tp = 25µs-
-
100
5
W
W
■ Adequate heatsinking is required to maintain the base temperature
at 75oC if full rated current is to be achieved. Power dissipation may
be calculated by use of VT(TO) and rT information in accordance with
standard formulae. We can provide assistance with calculations or
choice of heatsink if required.
■ The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
■ Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
■ An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
■ After application of thermal compound, place the module
squarely over the mounting holes, (or 'T' slots) in the heatsink.
Using a torque wrench, slowly tighten the recommended fixing
bolts at each end, rotating each in turn no more than 1/4 of a
revolution at a time. Continue until the required torque of 5Nm
(44lb.ins) is reached at both ends.
■ It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
Examples:
MP03 HBP275-16
MP03 HBN275-22
MP03 HBT275-18
ORDERING INSTRUCTIONS
MOUNTING RECOMMENDATIONS
Symbol Parameter Conditions UnitsMax.Typ.
GATE TRIGGER CHARACTERISTICS AND RATINGS
4/10
MP03 XXX 275 Series
2000
1500
1000
500
0
Instantaneous on-state current - (A)
0.5 1.0 1.5 2.0
Instantaneous on-state voltage - (V)
Measured under pulse conditions
T
j
= 125˚C
100
10
1
0.1
0.001 0.10.01
I
GD
0.1 10
I
FGM
100W
75W
50W
10W
5W
V
FGM
Lower Limit 1%
Upper Limit 99%
T
j
= -40˚C
T
j
= 25˚C
T
j
= 125˚C Region of
certain triggering
Gate trigger voltage - (V)
Gate trigger current - (A)
Table gives pulse power P
GM
in Watts
Pulse Width
µs
20
25
100
500
1ms
10ms
50
100
100
100
100
100
10
100
100
100
100
100
50
-
400
100
100
100
25
-
-
Frequency Hz
CURVES
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
Fig. 2 Gate trigger characteristics
5/10
MP03 XXX 275 Series
100101.00.10.010.001 Time - (s)
0.15
0
0.10
0.05
Thermal impedance - (˚C/W)
d.c.
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1101234550
ms Cycles at 50Hz
Duration
150
200
250
300
I
2
t value - (A
2
s x 10
3
)
I
2
t
I
2
t = Î
2
x t
2
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode)
6/10
MP03 XXX 275 Series
0 50 100 150 200 250 300
Mean on-state current - (A)
400
350
300
250
200
150
100
50
0
On-state power loss per device - (W)
180˚
120˚
90˚
60˚
30˚
450
0 50 100 150 200 250 300
Mean on-state current - (A)
400
350
300
250
200
150
100
50
0
On-state power loss per device - (W)
180˚
120˚
90˚
60˚
30˚
d.c.
450
350
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
7/10
MP03 XXX 275 Series
0 50 100 150 200 250 300
Mean on-state current - (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (˚C)
180˚120˚90˚60˚30˚
140
0 50 100 150 200 250 300
Mean on-state current - (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (˚C)
180˚
120˚90˚60˚30˚
140
d.c.
350
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
8/10
MP03 XXX 275 Series
0 40 80 120 0 200 400
1200
1000
800
600
400
200
0
Total power - (W)
10060
20
Maximum ambient temperature - (˚C) D.C. output current - (A) 600
R - Load
L - Load
R
th(hs-a)
˚C/W0.02
0.04
0.08
0.10
0.12
0.15
0.20
0.40
0.30
140
0 40 80 120 0 200 400
1200
1000
800
600
400
200
0
Total power - (W)
10060
20
Maximum ambient temperature - (˚C) D.C. output current - (A) 600
R & L- Load
R
th(hs-a)
˚C/W0.02
0.040.08
0.10
0.12
0.15
0.20
0.30
0.40
140
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
9/10
MP03 XXX 275 Series
HBT
G1K1
12
HBP
12
HBN
K2 G2
12
3
3
3
G1K1
K2 G2
35
5
28.5
80
50
52
92
3x M8
18
Ø5.5
38
6.5
2.8x0.8
32
42.5
5
5
1
23
K2
G2
G1
K1
Recommended fixings for mounting: M5 socket head cap screws.
Recommended mounting torque: 5Nm (44lb.ins)
Recommended torque for electrical connections: 8Nm (70lb.ins)
Maximum torque for electrical connections: 9Nm (80lb.ins)
Nominal weight: 950g
Module outline type code: MP03
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
CIRCUIT CONFIGURATIONS
10/10
MP03 XXX 275 Series
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4481-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
