FTD2017C Ordering number : ENA1930 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FTD2017C General-Purpose Switching Device Applications Features * * * Low ON-resistance Mount heigt 1.1mm Drain common specifications * * * 2.5V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 20 ID IDP Drain Current (Pulse) Allowable Power Dissipation PW10s, duty cycle1% When mounted on ceramic substrate (1000mm2x0.8mm) 1unit V 12 V 6 A 40 A 1.35 W Total Dissipation PD PT 1.4 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C When mounted on ceramic substrate (1000mm2x0.8mm) Product & Package Information unit : mm (typ) 7006A-005 * Package : TSSOP8 * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel 0.95 Package Dimensions 3.0 Packing Type : TL 5 0.5 8 0.125 Marking LOT No. 6.4 4.5 D2017C TL 1 4 0.95 0.25 0.05 1.0 0.425 0.65 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain Electrical Connection 8 7 6 5 1 2 3 4 SANYO : TSSOP8 http://semicon.sanyo.com/en/network 30211PA TKIM TC-00002574 No. A1930-1/4 FTD2017C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=8V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=6A, VGS=4.5V 13 17 23 m RDS(on)2 ID=6A, VGS=4V 14 18 24 m RDS(on)3 ID=3A, VGS=3.1V 15 19 30 m RDS(on)4 ID=3A, VGS=2.5V 15.4 20 33 m Turn-ON Delay Time td(on) See specified Test Circuit. 620 Rise Time tr See specified Test Circuit. 1160 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 3660 ns Fall Time tf Qg See specified Test Circuit. 2010 ns Total Gate Charge VDS=10V, VGS=4.5V, ID=6A 6.2 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A 1.7 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=6A, VGS=0V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 20 V 0.5 1 A 10 A 1.3 VDS=10V, ID=6A V 7.5 S ns 1.3 nC 0.79 1.2 V Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=5A RL=2 VIN D VOUT PW=10s D.C.1% Rg G P.G S 50 FTD2017C Rg=2.1k ID -- VDS 8 VGS=1.5V 3 4 3 2 2 1 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT16339 Ta= 75 C 4 5 0 --25 C 5 6 C 6 7 25 7 VDS=10V 9 Drain Current, ID -- A Drain Current, ID -- A 8 3.0V 2.5V 9 ID -- VGS 10 4.0V 10.0V 4.5V 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 1.8 2.0 IT16340 No. A1930-2/4 FTD2017C RDS(on) -- VGS 45 40 6A 30 25 20 15 10 5 0 2 4 6 8 10 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID 25 Source Current, IS -- A 7 5 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 10000 VDD=10V VGS=4.5V Switching Time, SW Time -- ns 7 tf 5 3 td(off) 2 tr 1000 7 td(on) 5 3 2 100 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 10 =6A V, I D =4.0 VGS 5 --40 --20 0 20 40 60 80 100 120 140 160 IT16342 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 10 s 10 10 0 s 0m m s s op tio n Operation in this area is limited by RDS(on). Ta=25C Single pulse When mounted on ceramic substrate (1000mm2x0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16347 0.6 0.8 1.0 1.2 IT16344 VDS=10V ID=6A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 IT16345 era 0.01 0.01 0.4 0 1 2 3 4 5 7 6 Total Gate Charge, Qg -- nC IT16346 PD -- Ta 1.6 1m DC 0.2 VGS -- Qg 4.5 7 IDP=40A (PW10s) ID=6A 0 Diode Forward Voltage, VSD -- V Allowable Power Dissipation, PD -- W Drain Current, ID -- A ASO 1.0 7 5 3 2 0.1 7 5 3 2 15 0.01 5 7 10 IT16343 Drain Current, ID -- A 10 7 5 3 2 20 3 2 2 100 7 5 3 2 A I =3 2.5V, D = VGS A I =6 4.5V, D = S VG Ambient Temperature, Ta -- C C C 5 --2 = Ta C 75 1.0 25 10 7 5 3 2 =3A V, I D =3.1 VGS 30 IT16341 VDS=10V 5 35 0 --60 12 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 10 40 5C 25C --25 C 0 45 Ta= 7 35 ID=3A RDS(on) -- Ta 50 Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 50 When mounted on ceramic substrate (1000mm2x0.8mm) 1.4 1.35 1.2 1.0 To t 0.8 1u al di nit ss 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 IT16348 No. A1930-3/4 FTD2017C Note on usage : Since the FTD2017C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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