PD - 9.1673A IRFIZ24E HEXFET(R) Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS(on) = 0.071 G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ID = 14A S The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. Units 14 9.6 68 29 0.19 20 71 10 2.9 5.0 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. Max. Units --- --- 5.2 65 C/W 9/22/97 IRFIZ24E Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 60 --- --- 2.0 4.5 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- 4.9 34 19 27 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 LS Internal Source Inductance --- 7.5 Ciss Coss Crss C Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance --- --- --- --- 370 140 65 12 V(BR)DSS V(BR)DSS/TJ I GSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.071 VGS = 10V, ID = 7.8A 4.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 10A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 20 ID = 10A 5.3 nC VDS = 44V 7.6 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 10A ns --- RG = 24 --- RD = 2.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- V DS = 25V pF --- = 1.0MHz, See Fig. 5 --- = 1.0MHz D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse --- --- 68 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 7.8A, VGS = 0V --- 56 83 ns TJ = 25C, IF = 10A --- 120 180 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 1.0mH t=60s, =60Hz RG = 25, IAS = 10A. (See Figure 12) ISD 10A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C Uses IRFZ24N data and test conditions IRFIZ24E 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 10 4 .5V 2 0 s PU LSE W ID TH TC = 2 5C 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP I , D ra in -to -S o u rc e C u rre n t (A ) D I , D ra in -to -S o u rce C u rre n t (A ) D TOP 1 10 A 10 4 .5V 20 s P UL SE W IDTH TC = 17 5C 1 100 0.1 V D S , D rain-to-S ource V oltage (V ) 3.0 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D , D r ain- to-S ourc e C urre nt (A ) TJ = 2 5 C T J = 1 7 5 C 10 V DS = 2 5 V 2 0 s P U L SE W ID TH 5 6 7 8 9 V G S , Ga te-to-S o urce V oltage (V ) Fig 3. Typical Transfer Characteristics A 100 Fig 2. Typical Output Characteristics 100 4 10 V D S , Drain-to-Source V oltage (V) Fig 1. Typical Output Characteristics 1 1 10 A I D = 1 7A 2.5 2.0 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (C ) Fig 4. Normalized On-Resistance Vs. Temperature IRFIZ24E V GS C is s C rs s C os s C , C a p a c ita n c e (p F ) 600 500 C iss 400 C os s = = = = 20 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd V G S , G a te -to -S o u rc e V o lta g e (V ) 700 V DS = 4 4V V DS = 2 8V 16 12 300 200 I D = 1 0A C rss 100 0 10 4 FO R TES T C IR CU IT SEE FIG U R E 13 0 A 1 8 0 100 4 V D S , Drain-to-Source V oltage (V) 12 16 A 20 Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) I S D , R e v e rse D ra in C u rre n t (A ) 8 TJ = 175 C TJ = 25C 10 VG S = 0 V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V S D , Source-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 2.0 100 10us 100us 10 1ms TC = 25 C TJ = 175 C Single Pulse 1 1 10ms 10 100 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 1000 IRFIZ24E 15 RD VDS VGS 12 D.U.T. I D , Drain Current (A) RG + - VDD 9 10V Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 T C , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRFIZ24E D.U.T. RG + V - DD IAS 5.0 V tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 140 L VDS TO P 120 BOT TO M 100 80 60 40 20 V D D = 2 5V 0 25 tp 50 A 75 100 125 150 175 Starting TJ , Junction T emperature (C) VDD Fig 12c. Maximum Avalanche Energy Vs. Drain Current VDS IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS ID 4.2A 7 .2A 10A D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRFIZ24E Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRFIZ24E Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.41 7) 10.40 (.40 9) o 3.40 (.133 ) 3.10 (.123 ) 4.8 0 (.189) 4.6 0 (.181) -A 3.70 (.145) 3.20 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2 .80 (.110) 2 .60 (.102) LE AD A S SIGN M E N T S 1 - GA TE 2 - D R AIN 3 - SO U R C E 7 .10 (.280) 6 .70 (.263) 1.15 (.04 5) M IN . N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 1 2 3 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B- 13 .7 0 (.540) 13 .5 0 (.530) C A 3X 1.40 (.05 5) 1.05 (.04 2) 3X 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M A M 0.48 (.019) 0.44 (.017) 2.85 (.112 ) 2.65 (.104 ) B 2 .54 (.100) 2X D B M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 ) Part Marking Information TO-220 Fullpak E XAM PLE : T HIS IS A N IRF I840G W ITH AS SE MBLY LOT CODE E401 A INT ER NAT IONA L RE CTIF IER PA RT NU MBE R IRF I840G LOGO E 401 9 24 5 AS SE MBLY LOT COD E D ATE CODE (YYW W ) YY = YE AR W W = W E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/97 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/