PD-97326D IRHLNM77110 2N7609U8 100V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.2) R7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNM77110 100 kRads(Si) 0.29 6.5A IRHLNM73110 300 kRads(Si) 0.29 6.5A Description IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC's, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available. SMD-0.2 (METAL LID) Features 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic Package Surface Mount Light Weight ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol ID1 @ VGS = 4.5V, TC = 25C Pre-Irradiation Parameter Value Continuous Drain Current 6.5 ID2 @ VGS = 4.5V, TC = 100C Continuous Drain Current 4.1 Units A IDM @ TC = 25C Pulsed Drain Current PD @TC = 25C Maximum Power Dissipation 23.2 W Linear Derating Factor 0.18 W/C VGS Gate-to-Source Voltage 10 V EAS Single Pulse Avalanche Energy 21 mJ IAR Avalanche Current 6.5 A EAR Repetitive Avalanche Energy 2.32 mJ Peak Diode Recovery dv/dt 4.3 V/ns dv/dt TJ TSTG Operating Junction and Storage Temperature Range 26 -55 to + 150 Package Mounting Surface Temp. 300 (for 5s) Weight 0.25 (Typical) C g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units BVDSS BVDSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 100 --- --- VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1.0 --- 3.5 --- --- --- --- --- --- --- --- --- --- --- --- -6.0 --- --- --- --- --- --- --- --- --- --- --- --- 2.0 --- --- 1.0 10 100 -100 11 4.0 6.0 18 75 50 12 Ls +LD Total Inductance --- 6.8 --- Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance --- --- --- --- 572 124 1.6 10.5 --- --- --- --- VGS(th)/TJ Gfs IDSS IGSS Zero Gate Voltage Drain Current --- --- 0.105 --- --- 0.29 Test Conditions V V/C VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 4.5V, ID2 = 4.1A V VDS = VGS, ID = 250A mV/C S VDS = 15V, ID2 = 4.1A VDS = 80V, VGS = 0V A VDS = 80V,VGS = 0V,TJ =125C VGS = 10V nA VGS = -10V ID1 = 6.5A nC VDS = 50V VGS = 4.5V VDD = 50V ID1 = 6.5A ns RG = 7.5 VGS = 5.0V Measured from the center of drain pad to center of source pad nH VGS = 0V VDS = 25V = 1.0MHz = 1.0MHz, open drain pF Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- 6.5 ISM Pulsed Source Current (Body Diode) --- --- 26 VSD Diode Forward Voltage --- --- 1.2 V TJ = 25C,IS = 6.5A, VGS = 0V trr Reverse Recovery Time --- --- 215 ns TJ = 25C, IF = 6.5A, VDD 25V Qrr Reverse Recovery Charge --- --- 1.05 C di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance Symbol RJC Parameter Junction-to-Case Min. Typ. Max. --- --- 5.4 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25C, L =0.98mH, Peak IL = 6.5A, VGS = 10V ISD 6.5A, di/dt 490A/s, VDD 100V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 2 International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 Radiation Characteristics Pre-Irradiation IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Symbol Up to 300 kRads (Si) 1 Min. Max. 100 --- Parameter BVDSS Drain-to-Source Breakdown Voltage VGS(th) Gate Threshold Voltage 1.0 IGSS IGSS Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse --- --- IDSS Zero Gate Voltage Drain Current --- RDS(on) Static Drain-to-Source On-State Resistance (TO-3) RDS(on) VSD Units Test Conditions V VGS = 0V, ID = 250A 2.0 V VDS = VGS, ID = 250A 100 -100 nA nA VGS = 10V VGS = -10V 1.0 A VDS = 80V, VGS = 0V --- 0.26 VGS = 4.5V, ID2 = 4.1A Static Drain-to-Source On-State Resistance (SMD-0.2) --- 0.29 VGS = 4.5V, ID2 = 4.1A Diode Forward Voltage --- 1.2 V VGS = 0V, IS = 6.5A 1. Part Numbers IRHLNM77110, IRHLNM73110. Additional part numbers IRHLNMC77110, IRHLNMC73110 are listed on page 9. IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area VDS (V) Energy Range (MeV/(mg/cm2)) (MeV) (m) 38 5% 300 7.5% 38 7.5% 100 100 100 100 100 100 62 5% 355 7.5% 33 7.5% 100 100 100 100 100 --- 85 5% 380 10% 29 7.5% 100 100 100 100 --- --- VDS LET @ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS = 0V -2V -4V -5V -6V -7V 120 100 80 60 40 20 0 LET=38 5% LET=62 5% LET=85 5% 0 -1 -2 -3 -4 -5 -6 -7 VGS Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 Pre-Irradiation 100 100 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V BOTTOM 2.25V VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V BOTTOM 2.25V 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1 2.25V 60s PULSE WIDTH, Tj = 25C 0.1 0.1 1 10 10 2.25V 1 60s PULSE WIDTH Tj = 150C 0.1 100 0.1 1 VDS, Drain-to-Source Voltage (V) 2.0 T J = 150C 10 T J = 25C 1 VDS = 50V 6s PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 0.1 ID = 6.5A 1.5 1.0 0.5 VGS = 4.5V 0.0 0 1 2 3 4 5 6 7 8 9 10 -60 -40 -20 VGS, Gate-to-Source Voltage (V) ID = 6.5A 0.8 0.7 0.6 0.5 T J = 150C 0.4 0.3 0.2 0.1 T J = 25C 0 2 4 6 8 10 20 40 60 80 100 120 140 160 Fig 4. Normalized On-Resistance Vs. Temperature RDS(on), Drain-to -Source On Resistance () 1.0 0.9 0 T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics RDS(on), Drain-to -Source On Resistance () 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 12 1.0 0.9 0.8 T J = 150C 0.7 0.6 0.5 0.4 T J = 25C 0.3 0.2 Vgs = 4.5V 0.1 0 0 2 Fig 5. Typical On-Resistance Vs Gate Voltage 4 6 8 10 12 14 16 18 20 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) 4 10 VDS , Drain-to-Source Voltage (V) Fig 6. Typical On-Resistance Vs Drain Current International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 130 3.0 ID = 1.0mA VGS(th) Gate threshold Voltage (V) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Pre-Irradiation 120 110 100 -60 -40 -20 0 20 40 60 2.5 2.0 1.5 ID = 50A 1.0 ID = 250A ID = 1.0mA 0.5 ID = 150mA 0 80 100 120 140 160 -60 -40 -20 T J , Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature 1200 VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) C iss 600 Coss 400 C rss 200 40 60 80 100 120 140 160 Fig 8. Typical Threshold Voltage Vs Temperature ID = 6.5A Coss = Cds + Cgd 800 20 12 VGS = 0V, f = 1 MHz Ciss = C gs + Cgd, C ds SHORTED Crss = C gd 1000 0 T J , Temperature ( C ) VDS = 80V VDS = 50V 10 VDS = 20V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 17 0 0 1 10 100 0 2 VDS , Drain-to-Source Voltage (V) 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 7 100 ID, Drain Current (A) ISD, Reverse Drain Current (A) 6 10 T J = 150C T J = 25C 1.0 5 4 3 2 1 VGS = 0V 0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 Fig 11. Typical Source-Drain Diode Forward Voltage 5 50 75 100 125 150 T C , Case Temperature (C) VSD , Source-to-Drain Voltage (V) Fig 12. Maximum Drain Current Vs.Case Temperature International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 Pre-Irradiation 30 OPERATION IN THIS AREA LIMITED BY RDS(on) EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 100 10 100s 1 0.1 1ms 10ms Tc = 25C Tj = 150C Single Pulse DC 1 10 100 TOP 25 BOTTOM ID 2.9A 4.1A 6.5A 20 15 10 5 0 1000 25 50 75 100 125 150 VDS , Drain-to-Source Voltage (V) Starting T J , Junction Temperature (C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 1 10 Thermal Response 0. 1 Thermal Response ( Z thJC ) (Z thJC ) D = 0. 50 D = 0.50 0. 20 0.20 0.10 0. 10 1 0.05 0. 05 0.02 0. 02 0.01 0. 01 PDM SINGLE PULSE SI NG LE PULS (ETHERMAL RESPONSE ) t1 ( THERMAL RESPO NSE) t2 Notes: Not es: 1. Dut y f act or D =t 11. /Duty 2t 0. 01 0. 00001 2. Peak TJ = P DM x 0.1 1E-005 0. 0001 0.0001 0. 001 0.001 0.01 0. 01 t1 , Re c ta n g u l a r Pu l s e Du ra ti o n (s e c ) t1 , Rectangular Pulse Duration (sec) Factor D = t1/t2 + TTj 2.Zt hJC Peak C = P dm x Zthjc + Tc 0.1 0. 1 1 Fig 15. Maximum Effective Transient Thermal Impedance, Junction -to-Case 6 International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 Pre-Irradiation V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V Vgs tp tp 0.01 I AS Fig 16a. Unclamped Inductive Test Circuit Fig 17a. Gate Charge Waveform Fig 18a. Switching Time Test Circuit 7 A Fig 16b. Unclamped Inductive Wave- Fig 17b. Gate Charge Test Circuit Fig 18b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 Pre-Irradiation Case Outline and Dimensions - SMD-0.2 ( Metal Lid) Case Outline and Dimensions - SMD-0.2 ( Ceramic Lid) 8 International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 Pre-Irradiation Additional Product Summary (continued from pages 1 and 3) Product Summary Part Number Radiation Level RDS(on) ID IRHLNMC77110 100 kRads(Si) 0.29 6.5A IRHLNMC73110 300 kRads(Si) 0.29 6.5A SMD-0.2 (CERAMIC LID) www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 9 International Rectifier HiRel Products, Inc. 2018-11-14 IRHLNM77110 2N7609U8 Pre-Irradiation IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. 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