GC4210 – GC4275
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
CONTROL DEVICES – HIGH SPEED PIN DIODES
TM ®
www.MICROSEMI.com
Copyright 2006
Rev.: 2009-02-19
RoHS Com
p
liant
IMPORTANT: For the most current data, consult MICROSEMI’s website: HUwww.MICROSEMI.comUH
Specifications are subject to change, consult factory fo r the latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
DESCRIPTION
The GC4200 series are high speed (cathode base) PIN diodes
made with high resistivity epitaxial silicon material. These diodes
are passivated with silicon dioxide for high stability and reliability
and have been proven by thousands of device hours in high
reliability systems.
These devices can withstand storage temperatures from -65°C to
+200°C and will operate over the range from -55°C to +150°C. All
devices meet or exceed military environmental specifications of
MIL-PRF-19500. The GC4200 series will operate with as little as
+10 mA forward bias.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise
specified. Consult the factory if you have special requirements.
APPLICATIONS/BENEFITS
RF / Microwave Switching
Duplexers
Digital Phase Shifting
Phase Array Radar
2BAPPLICATIONS
The GC4200 series can be used in RF circuits as an on/off element,
as a switch, or as a current controlled resistor in attenuators
extending over the frequency range from UHF through Ku band.
Switch applications include high speed switches (ECM systems), TR
switches, channel or antenna selection switches
(telecommunications), duplexers (radar) and digital phase shifters
(phased arrays).
The GC4200 series are also used as passive and active limiters for
low to moderate RF power levels.
Attenuator type applications include amplitude modulators, AGC
attenuators, power levelers and level set attenuators.
ABSOLUTE MAXIMUM RATINGS AT 25º C
3B(UNLESS OTHERWISE SPECIFIED)
Rating Symbol Value Unit
Maximum Leakage Current
@80% of Minimum Rated VB IR 0.5 uA
Storage Temperature TSTG -65 to +200 ºC
Operating Temperature TOP -55 to +150 ºC
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
Low Loss
Suitable for application to 18Ghz
High Speed
Low Insertion Loss
High Isolation
RoHS Compliant
1
1 Most of our devices are supplied with
Gold plated terminations. Other terminal
finishes are available on request. Consult
factory for details.
G
GC
C4
42
21
10
0-
-G
GC
C4
42
27
75
5
GC4210 – GC4275
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
CONTROL DEVICES – HIGH SPEED PIN DIODES
TM ®
www.MICROSEMI.com
Copyright 2006
Rev.: 2009-02-19
RoHS Com
p
liant
.
Notes:
1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request.
2. Capacitance is measured at 1 MHz.
3. Resistance is measured AT 1 GHz using transmission loss techniques.
The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and
characterization is completed using a style 30 package. Diodes are available in many case styles.
Each type offers performance trade-offs. The proper choice of package style depends on the end
application and operating environment. Consult factory for assistance. Reverse polarity diodes
(NIP) and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4300,
GC4400, and GC4500 series respectively.)
DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E
Model Number 1
Vb(V)
IR=10μA
(Min)
Cj (pF) 2
@VR=10V
(Max)
Rs() 3
@20 mA
(Max)
TL(nS)
IR=6mA/IF=10mA
(Typ)
Thermal
Resistance
(˚C/W)
(Max)
GC4270 70 0.06 1.5 100 80
GC4271 70 0.10 1.0 100 70
GC4272 70 0.20 0.8 100 70
GC4273 70 0.30 0.7 100 60
GC4274 70 0.40 0.6 100 50
GC4275 70 0.50 0.5 100 40
GC4210 100 0.06 1.5 200 80
GC4211 100 0.10 1.0 200 70
GC4212 100 0.20 0.75 200 70
GC4213 100 0.30 0.6 200 60
GC4214 100 0.40 0.5 200 50
GC4215 100 0.50 0.35 200 40
GC4220 250 0.06 2.5 500 80
GC4221 250 0.10 2.0 500 70
GC4222 250 0.20 1.5 500 70
GC4223 250 0.30 1.0 500 60
GC4224 250 0.40 0.8 500 50
GC4225 250 0.50 0.6 500 40
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
GC4210 – GC4275
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
CONTROL DEVICES – HIGH SPEED PIN DIODES
TM ®
www.MICROSEMI.com
Copyright 2006
Rev.: 2009-02-19
RoHS Com
p
liant
RS VS IF CURVES
Typical R
S
Vs I
F
Curves
GC4220 Series
GC4210 Series
GC4270 Series
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100
I
F
(mA)
R
S
()
G
GR
RA
AP
PH
HS
S
GC4210 – GC4275
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
CONTROL DEVICES – HIGH SPEED PIN DIODES
TM ®
www.MICROSEMI.com
Copyright 2006
Rev.: 2009-02-19
RoHS Com
p
liant
PACKAGE STYLE 00
PACKAGE STYLE 30
Dimensions vary by model. Consult factory for details.
PACKAGE STYLE 35
PACKAGE STYLE 115
50 OHM BOLT CHANNEL MODULE
OTHER PACKAGE STYLES AVAILABLE ON REQUEST
CONSULT FACTORY
M
ME
EC
CH
HA
AN
NI
IC
CA
AL
L
