NJG1108HA8
- 1 -
Ver.2009-04-17
“H”=VCTL(H), “L”=VCTL(L)
GPS LOW NOISE AMPLIFIER GaAs MMIC
! GENERAL DESCRIPTION ! PACKAGE OUTLINE
The NJG1108HA8 is a low noise amplifier GaAs MMIC designed for
GPS. This amplifier provides low noise figure, high gain and high IP3
operated by single low positive power supply. This IC has the function
of Stand-by mode. This amplifier can be tuned to wide frequency point
(1.5GHz~2.7GHz) by changing the external matching components.
An ultra-small and ultra-thin package of the USB6-A8 is adopted.
! FEATURES
" Low voltage operation +2.7V typ.
" Low current consumption 2.0mA typ. @VCTL=1.85V
1uA typ. @VCTL=0V
" High gain 19dB typ. @VCTL=1.85V, f=1.575GHz
" Low noise figure 1.0dB typ. @VCTL=1.85V, f=1.575GHz
" Input power at 1dB gain compression point -15.0dBm typ. @VCTL=1.85V, f=1.575GHz
" High input IP3 0dBm typ. @VCTL=1.85V, f=1.575+1.5751GHz
" Ultra-small and ultra-thin package USB6-A8 (Package size: 1.0x1.2x0.38mm)
! PIN CONFIGURATION
!TRUTH TABLE
VCTL LNA Mode
H Active Mode
L Sleep Mode
Pin Connection
1. VINV
2. RFOUT
3. GND
4. RFIN
5. GND
6. VCTL
NJG1108HA8
Note: Specifications and description listed in this datasheet are subject to change without notice.
(Top View)
GND
RFIN
VINV
RFOUT
4
5
2
6
1
3
VCTL
GND
Bias
Circuit
Logic
Circuit
NJG1108HA8
- 2 -
!ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50ohm
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage VDD 5.0 V
Inverter voltage VINV 5.0 V
Control voltage VCTL 5.0 V
Input power Pin VDD=2.7V +15 dBm
Power dissipation PD On PCB board, Tjmax=150°C 150 mW
Operating temperature Topr -40~+85 °C
Storage temperature Tstg -55~+150 °C
!ELECTRICAL CHARACTERISTICS 1
GENERAL CONDITIONS: VDD=VINV=2.7V, Ta=+25° C, Zs=Zl=50ohm, with application circuit
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating voltage VDD 2.5 2.7 3.5 V
Inverter supply voltage VINV 2.5 2.7 3.5 V
Control voltage (High) VCTL(H) 1.5 1.85 VINV+0.3 V
Control voltage (Low) VCTL(L) 0 0 0.3 V
Operating current1
(Active Mode, RF OFF) IDD1 RF OFF, VCTL=1.85V - 2.0 3.0 mA
Operating current2
(Sleep Mode, RF OFF) IDD2 RF OFF, VCTL=0V - 1 5 µA
Inverter current1 IINV1 RF OFF, VCTL=1.85V - 30 60 µA
Inverter current2 IINV2 RF OFF, VCTL=0V - 9 20 µA
Control current ICTL RF OFF, VCTL=1.85V - 6 20 µA
NJG1108HA8
- 3 -
!ELECTRICAL CHARACTERISTICS 2 (Active Mode)
GENERAL CONDITIONS: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq 1.57 1.575 1.58 GHz
Small signal gain Gain 17.0 19.0 21.5 dB
Noise figure NF Exclude PCB & connector
losses (IN: 0.05dB) - 1.0 1.2 dB
Input power at 1dB gain
compression point P-1dB(IN) -19.0 -15.0 - dBm
Input 3rd order
intercept point IIP3 f1=fRF, f2=fRF+100kHz,
Pin=-34dBm -5.0 0 - dBm
RF IN VSWR VSWRi - 2.0 2.5
RF OUT VSWR VSWRo - 1.5 2.0
NJG1108HA8
- 4 -
!TERMINAL INFORMATION
No. SYMBOL DESCRIPTION
1 VINV Power supply pin of the inverter circuit.
2 RFOUT
RF Output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L3 is a RF choke inductor. These elements are used as
output matching circuit.
3 GND
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.)
4 RFIN
RF input pin. A DC blocking capacitor is not required. An external matching
circuit is required.
5 GND
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.)
6 VCTL
Control voltage input pin. This control pin is set to high. LNA suffers from
standby state when LNA puts the changeover voltage of "Low" in a state of
movement when the changeover voltage of "High" is put in this terminal.
CAUTION
1) Ground terminal (3, 5) should be connected to the ground plane as low inductance as possible.
NJG1108HA8
- 5 -
! ELECTRICAL CHARACTERISTICS
(Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit)
-25
-20
-15
-10
-5
0
5
10
-40-30-20-10 0 10
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-15.0dBm
Pout
Pout vs. Pin
(fRF=1575MHz)
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
6
7
8
-40 -30 -20 -10 0 10
Gain (dB)
IDD (mA)
Pin (dBm)
Gain
IDD
Gain, IDD vs. Pin
(fRF=1575MHz)
P-1dB(IN)=-15.0dBm
-100
-80
-60
-40
-20
0
20
-40-30-20-10 0 10
Pout, IM3 (dBm)
Pin (dBm)
IIP3=+2.4dBm
Pout
IM3
Pout, IM3 vs. Pin
(fRF=1575+1575.1MHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
1.5 1.55 1.6 1.65
Noise Figure (dB)
frequency (GHz)
NF
NF vs. frequency
(Exclude PCB, Connector Losses)
0
5
10
15
20
05101520
k factor
frequency (GHz)
k factor vs. fr equency
NJG1108HA8
- 6 -
! ELECTRICAL CHARACTERISTICS
(Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit)
0
1
2
3
4
5
2.533.54
IDD (mA)
VDD, VINV (V)
IDD
IDD vs. VDD, VINV
(RF OFF)
-24
-22
-20
-18
-16
-14
-12
-10
-8
2.533.54
P-1dB(I N) (dBm)
VDD, VINV (V)
P-1dB(IN)
P-1dB(IN) vs. VDD, VINV
(fRF=1575MHz)
10
12
14
16
18
20
22
24
26
-4
-2
0
2
4
6
8
10
12
2.533.54
OIP3 (dBm)
IIP3 (dBm)
VDD, VINV (V)
OIP3
IIP3
OIP 3, IIP3 vs. VDD, VINV
(fRF=1575+1575.1MHz, P in=-34dBm)
8
10
12
14
16
18
20
22
24
0
0.5
1
1.5
2
2.5
3
3.5
4
2.533.54
Gain (dB)
NF (dB)
VDD, VINV (V)
Gain
NF
Gain, NF vs. VDD, VINV
(fRF=1575MHz)
0
1
2
3
4
5
2.533.54
VSWRi
VSWRo
VSWRi, VSWRo
VDD, VINV (V)
VSWR vs. VDD, VINV
(fRF=1575MHz)
NJG1108HA8
- 7 -
! ELECTRICAL CHARACTERISTICS
(Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit)
0
1
2
3
4
5
-50 0 50 100
IDD (mA)
Tem pera t ur e ( oC)
IDD
IDD vs. Temperature
(RF OFF)
-24
-22
-20
-18
-16
-14
-12
-10
-8
-50 0 50 100
P-1dB(I N) (dBm)
Tem pera t ur e ( oC)
P-1dB(IN)
P-1dB(I N) vs. Temperat ure
(fRF=1575MHz)
0
5
10
15
20
25
-5
0
5
10
15
20
-50 0 50 100
OIP3 (dBm)
IIP3 (dBm)
Tem pera t ur e ( oC)
OIP3
IIP3
OIP3, IIP3 vs. Temperature
(fRF=1575+1575.1MHz, P in=-34dBm)
0
0.5
1
1.5
2
2.5
3
00.511.522.53
-40oC
-25oC
0oC
+25oC
+50oC
+85oC
IDD (mA)
VCTL (V)
IDD
IDD vs. VCTL
(RF OFF)
+85oC-40oC
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
7
-50 0 50 100
Gain (dB)
NF (dB)
Tem pera t ur e ( oC)
Gain
NF
Gain, NF vs. Temperature
(fRF=1575MHz)
0
1
2
3
4
5
-50 0 50 100
VSWRi
VSWRo
VSWRi, VSWRo
Temperature (oC)
VSWR vs. Temperature
(f=1575MHz)
NJG1108HA8
- 8 -
! ELECTRICAL CHARACTERISTICS
(Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22 (f=50MHz~20 GHz) S21, S12 (f=50MHz~20GHz)
NJG1108HA8
- 9 -
! APPLICATION CIRCUIT
! TEST PCB LAYOUT
Parts ID Notes
L1~L4 MURATA
(LQP03T series)
C1~C3 MURATA
(GRM03 series)
PCB (FR-4): t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50ohm)
PCB SIZE=17.0mmx17.0mm
Parts List
GND
RFIN
VINV
RFOUT
4
5
2
6
1
3
VCTL
GND
Logic
Circuit
Bias
Circuit
L1
39nH
L2
10nH
L3
12nH
L4
15nH C1
100pF
C2
1000pF
VCTL=0V or 1.85V
VINV=2.7V
VDD=2.7V
RF IN RF OUT
(Top View)
C3
1000pF
C4
1000pF
RF IN RF OUT
VDD
VCTL VINV
L1
L2 L3
L4 C1
C2
(Top View)
C3
C4
NJG1108HA8
- 10 -
!PACKAGE OUTLINE (USB6-A8)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
ou
r
countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these dama
g
es.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
Photo resist coating
TERMINAL TREAT :Au
Substrate :FR5
Molding material :Epoxy resin
UNIT :mm
WEIGHT :1.1mg
0.2 (MIN0.15)
1.2±0.05
0.8
0.4
0.2±0.04
6
R0.05
5
1
4
2
3
0.4
1.0
±
0.05
0.2
±
0.07
0.2±0.04
0.6
0.1
±
0.05
C0.1
0.38±0.06
0.038-0.009
+0.012
S
0.03
S
