S9018-G
NPN Silicon
Transistors
CLASSIFICATION OF H FE
Rank G H I
Range 70-108 97-146 130-198
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.31Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.05A
• Collector-base Voltage 25V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking : S9018
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=100uAdc, IE=0)
25 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=0.1mAdc, IB=0)
18 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=100uAdc, IC=0)
4.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=20Vdc, I
E=0)
--- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=15Vdc, I
B=0)
--- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=3.0Vdc, I
C=0)
--- 0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(I
C=1.0mAdc, VCE=5.0Vdc)
28 270 ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=10mAdc, IB=1.0mAdc)
--- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=10mAdc, IB=1.0mAdc)
--- 1.4 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(I
C=5.0mAdc, VCE=5.0Vdc,
f=400MHz)
600 --- MHz
omponents
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MCC
Revision: D 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
S9018-H
S9018-I
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500 --- 12.70 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
.095.1052.422.67 Straight Lead
AE
B
C
D
G
EBC
EBC
BENT LEADSTRAIGHT LEAD
BULK PACK AMMO PACK
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
.173.2204.405.60 Bent Lead
G
TO-92
DIMENSIONS
Halogen free available upon request by adding suffix "-HF"
•