BYY57 / BYY58
35A Silicon Power Rectifier Diode
Part no.
Description
The BYY57/58 are hermetically sealed 35A-
diodes, which are available in different reverse
voltage classes up to 1500V.
The diodes can be delivered with limited forward
voltage and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
Forward current 35A
Reverse voltage 75V – 1500V
Hermetic press-fit package
Available in different modifications of the
package
Applications
Power supplies
Rectifier diode in car generators
Rectifier bridges/stacks
Back-off-diodes
Pinout details
BYY57: 1 – cathode; 2 - anode
BYY58: 1 – anode; 2 - cathode
Typical application circuit
Six pulse
bridge
connection ~ ~ ~
3 x BYY57-1200 3 x BYY58-1200
+ -
1
2
Ordering information
Device Quantity per box Options
BYY57-75; …; BYY57-1500 500
BYY58-75; …; BYY58-1500 500
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYY57- black, BYY58 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY57………………………………... diode type
400………………………………….. repetitive peak reverse voltage VRRM (in V) 400
Issue 4 – September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
BYY57 / BYY58
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Unit Test condition
BYY57-75 BYY58-75 75
BYY57-100 BYY58-100 100
BYY57-150 BYY58-150 150
BYY57-200 BYY58-200 200
BYY57-300 BYY58-300 300
BYY57-400 BYY58-400 400
BYY57-500 BYY58-500 500
BYY57-600 BYY58-600 600
BYY57-700 BYY58-700 700
BYY57-800 BYY58-800 800
BYY57-900 BYY58-900 900
BYY57-1000 BYY58-1000 1000
BYY57-1100 BYY58-1100 1100
BYY57-1200 BYY58-1200 1200
BYY57-1300 BYY58-1300 1300
BYY57-1400 BYY58-1400 1400
Repetitive
peak
reverse
voltage
BYY57-1500 BYY58-1500
VRRM
1500
V Tc = 150°C
Forward current, arithmetic value IFAV 35 A
600 half-sine wave,
10 ms
Surge forward current IFSM
500
A TJ = 175°C half-sine
wave, 10 ms
1800 half-sine wave,
10 ms
Maximum rated value i²dt
1250
A²s TJ = 175°C half-sine
wave, 10 ms
Repetitive peak forward current IFRM=π*IFAV 110 A f = >15 Hz
Effective forward current IFRMS 55 A
Junction temperature TJmax 200 °C
Storage temperature range Tstg - 50 to + 175 °C
Issue 4 – September 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
BYY57 / BYY58
Thermal resistance
Parameter Symbol Value Unit
Junction to case RθJC 1.0 °C/W
Thermal characteristics
Forward current derating diagram
200°C
168°C
0
5
10
15
20
25
30
35
40
-50 0 50 100 150 200 250
TC (°C)
IF (A)
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Forwa rd voltage characteristic
0
5
10
15
20
25
30
35
40
0,75 0,8 0,85 0,9 0,95 1 1,05
VF (V)
IF (A)
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Issue 4 – September 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
BYY57 / BYY58
Parameter Symbol Min. Typ. Max. Unit Test contitions
BYY57-75...1200
BYY58-75...1200 - 1.0 1.1
Forward
voltage BYY57-1300...1500
BYY58-1300...1500
VF
- 1.03 1.15
V
IF = 35 A,
measuring time
10ms (half-sine
wave)
BYY57-75...1200
BYY58-75...1200 - 0.82 -
BYY57-1300...1500
BYY58-1300...1500
VF
- 0.85 -
V
IF = 20 A,
measuring time
10ms (half-sine
wave),TJ = 150°C
BYY57-75...1200
BYY58-75...1200 - - 1.2
Forward
voltage
(information
values)
BYY57-1300...1500
BYY58-1300...1500
VF
- - 1.25
V IF = 50 A
BYY57-75...150
BYY58-75...150 - - 3
BYY57-200...1500
BYY58-200...1500
IRRM
- - 1.5
mA TJ = 150°C, at
VRRM
BYY57-75...400
BYY58-75...400 - - 0.25
Reverse
current
BYY57-500...1500
BYY58-500...1500
IRRM
- - 0.1
mA at VRRM
Threshold voltage (information
value) V(FO) - 0.66 - V TJ = 175°C
Slope resistance (information
value) rF- 5.75 - m T
J = 175°C
Options: Electrical characteristics for parallel connecting
(at Tamb = 25°C unless otherwise stated)
Option Parameter Symbol Min. Typ. Max. Unit Test contitions
1 Forward voltage
difference in one
category of forward
voltage
VF- - 0.05 V IF = 35 A, measuring
time 10ms (half-sine
wave)
2 Reverse current in one
category of forward
voltage (only for
BYY57-300…1500 and
BYY58-300…1500)
IR- - 0.01 mA at VRRM
Packaging details
Issue 4 – September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
BYY57 / BYY58
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM Millimeters Inches
MIN TYP MAX MIN TYP MAX
A 15,00 15,50 16,00 0,591 0,610 0,630
A1 5,90 6,10 6,30 0,232 0,240 0,248
A2 2,10 2,30 2,50 0,083 0,091 0,098
b 3,10 3,40 3,70 0,122 0,134 0,146
D 15,50 15,70 15,90 0,610 0,618 0,626
D1 12,75 12,80 12,85 0,502 0,504 0,506
D2 12,30 12,50 12,70 0,484 0,492 0,500
L 3,00 3,50 4,00 0,118 0,138 0,157
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© Zetex Semiconductors plc 2006