RECTRON
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
2SC2712
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Emitter cut-off current (VEB= 5V, IC=0)
DC current gain (VCE= 6V, IC= 2mA)
Collector cut-off current (VCB= 60V, IE=0)
Collector-emitter saturation voltage (IC= 100mA, IB= 10mA)
Transition frequency (VCE= 10V, IC= 1mA)
Output capacitance (VCB= 10V, IE= 0, f= 1MHZ)
Noise figure (VCE= 6V, IC= 0.1mA, f= 1KHZ, Rg= 10KW)
CHARACTERISTICS SYMBOL UNITS
--
-
-
-
-
-
-
-
-
-
0.1
0.1
2.0
1.0
700
mA
mA
V
V
V
V
pF
MHz
dB
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 100mA, IC=0)
CLASSIFICATION OF hFE
RANK
Range
Marking
O
70-140 120-240
LO LY
V(BR)CBO
V(BR)CEO
V(BR)EBO
IEBO
hFE
ICBO
VCE(sat)
fT
Cob
NF
TYP MAX
60
50
5
-
-
3.5
10-
80
-
70
MIN
BL
Y
200-400
LG
GR
350-700
LL
0.055(1.40)
0.047(1.20)
-0.1
-
0.25
BASE
EMITTER
COLLECTOR
*
*
*
*
Power dissipation
PCM : 150 mW(Tamb=25OC)
Collector current
ICM : 150 mA
Collector-base voltage
V(BR)CBO : 60 V
Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
1
1
2
3
2
3
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.