NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 Vocro Ic hyprp@ Ig/ Vee VE (sat PACKAGE | DEVICE | (sus) | (max) | (min/max @ Iclly P,* fy TYPE | vouts | amps | _@ A/V) (V@a/A) | watts | (MHz) pnp _| 2N3740 60 1 | 30-100@.25/1 | 6@1/.125 25 4 TO-66 lon3740a | 60 1 | 30-100@.25/1 | 6@1/.125 25 4 2N3741 80 1 | 30-100@25/11 | 6@1/.125 25 4 eh [2714 | 8 1 | 30-100@.25/1 | 6@1/.125 25 4 Ns 2N4898 40 1 |20-100@.5/1 | 6@1/.1 25 3 2N4899 60 1 | 20-100@.5/1 | 6@1/.1 25 3 2N4900 80 1 | 20-100@.5/1 | 6@1/.1 25 3 2N5954 80 6 | 20-100@2/4 | 1@2/2 40 5 2N5955 80 6 | 20-100@2.5/4 | 1@2.5/.25 40 5 2N5956 40 6 | 20-100@3/4 | 1@3/3 40 5 2N6211 250" 2 | 10-100@1/2.8 | 1.4@1/.125 35 20 2N6212 325 2 | 10-100@1/3.2 | 1.6@1/.125 35 20 2N6213 375" 2 |10-100@1/4 | 2@1/.125 35 20 2N6312 40 5 | 25-100@1.5/4 | .7@1.5/.15 75 4 2N6313 60 5 | 25-100@1.5/4 | .7@1.5/.15 75 4 2N6314 80 5 | 25-100@1.5/4 | .7@1.5/.15 75 4 2N6317 60 7 | 20-100@2.5/4 | 1@4/.4 90 4 2N6318 80 7 | 20-100@2.5/4 | 1@4/.4 90 4 . Te = 28C VcER