1
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
The RF Line
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost.
•High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
•Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
•High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
•High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
•State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
•Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 10 Vdc
Collector–Base Voltage VCBO 20 Vdc
Emitter–Base Voltage VEBO 3.0 Vdc
Collector Current — Continuous IC80 mA
Total Device Dissipation @ Tcase = 75°C
MMBR571LT1, MRF5711LT1
Derate linearly above Tcase = 75°C @
PD(max) 0.33
4.44 W
mW/°C
Total Device Dissipation (1) @ TC = 75°C
Derate above 75°C MRF571 PD0.58
7.73 Watts
mW/°C
Operating and Storage Temperature Tstg –55 to
+150 °C
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1 RθJC 225 °C/W
Thermal Resistance, Junction to Case MRF571 RθJC 130 °C/W
Maximum Junction Temperature TJmax 150 °C
DEVICE MARKING
MMBR571LT1 = 7X MRF5711LT1 = 02
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR571LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 80 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR571LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5711LT1
CASE 317–01, STYLE 2
MACRO–X
MRF571
Motorola, Inc. 1997
REV 8
MMBR571LT1 MRF571 MRF5711LT1
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) V(BR)CEO 10 12 — Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 20 — — Vdc
Emitter–Base Breakdown Voltage (IE = 50 µAdc, IC = 0) V(BR)EBO 2.5 — — Vdc
Collector Cutof f Current (VCB = 8.0 Vdc, I E = 0) ICBO — — 10 µAdc
ON CHARACTERISTICS
DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc) hFE 50 — 300 —
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MM BR571LT1
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz) MRF5711LT1, MRF571
Ccb —
—0.7
0.75 1.0
1.0
pF
Current Gain–Bandwidth Produc
(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz) MMBR571LT1
(VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz) MRF5711LT1, MRF571
fT—
—8.0
8.0 —
—
GHz
FUNCTIONAL TESTS
Gain @ Noise Figure MRF571 f = 0.5 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc) MRF571 f = 1.0 GHz GNF —
10 16.5
12 —
—dB
Noise Figure MRF571 f = 0.5 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc) MRF571 f = 1.0 GHz
f = 2.0 GHz
NF —
—
—
1.0
1.5
2.8
—
2.0
—
dB
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBR571LT1 f = 0.5 GHz
f = 1.0 GHz
(IC = 10 mA, VCE = 6.0 Vdc) MRF5711LT1 f = 1.0 GHz
GNF —
—
—
16.5
10.5
13.5
—
—
—
dB
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBR571LT1 f = 0.5 GHz
f = 1.0 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc) MRF5711LT1 f = 1.0 GHz
NF —
—
—
2.0
2.6
2.2
—
—
—
dB
Noise Figure
(VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz) MRF5711LT1 NFmin —1.6 — dB
Power Gain in 50 Ω System (VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1 |S21|29.0 10 — dB
Figure 1. Maximum Available Gain
versus Frequency Figure 2. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
25
20
15
10
5
0
0.4 0.6 1 2 3
f, FREQUENCY (GHz)
GAMAX, MAXIMUM AV AILABLE GAIN (dB)
VCE = 5 V
IC = 30 mA
GAMAX
+
|S21|
|S12|(k
"
(k2
–
1) ), k
w
1
Ǹ
10
8
6
4
2
00IC, COLLECTOR CURRENT (mA)
fT, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
10 20 30 40 50 60 70 80 90 100
VCE = 5 V
f = 1 GHz
TYPICAL CHARACTERISTICS
MMBR571LT1
3
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
Figure 3. Input Capacitance versus
Emitter Base Voltage
SOT–23 MMBR571LT1 SOT–23 MMBR571LT1
SOT–23 MMBR571LT1
Cib, INPUT CAPACITANCE (pF)
VBE, BASE–EMITTER VOLTAGE (Vdc)
4
1
3
2
1
23
0
0
f = 1 MHz
Cib
Ccb , OUTPUT CAPACITANCES (pF), Cob
Vcb, COLLECTOR–BASE VOLTAGE (Vdc)
2.5
0
2
1.5
1
0.5
012 345678910
C
ob
Ccb
f = 1 MHz
GNF, GAIN AT NOISE FIGURE (dB)
0IC, COLLECTOR CURRENT (mA)
20
16
12
8
4
010 20 30 40 50
f = 500 MHz
VCE = 5 V
TYPICAL CHARACTERISTICS
MMBR571LT1
Figure 4. Output Capacitances versus
Collector–Base Voltage
Figure 5. Gain at Noise Figure versus
Collector Current
1 GHz
Figure 6. Noise Figure versus Collector Current
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1 SOT–23 MMBR571LT1
NF, NOISE FIGURE (dB)
0
IC, COLLECTOR CURRENT (mA)
5
4
3
2
1
010 20 30 40 50
f = 500 MHz
f = 1 GHz
VCE = 5 V
GNF, GAIN AT NOISE FIGURE (dB)
0.2
f, FREQUENCY (GHz)
25
20
15
10
5
00.3 0.5 1 1.5 2
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
VCE = 5 V
IC = 10 mA
GNF
NF
25
0.2
f, FREQUENCY (GHz)
20
15
10
50.3 0.6 1 2
30
1.5
GUMAX = |S21|2
(1 – |S11|2)(1 – |S22|2)
GUMAX
|S21|2
VCE = 5 V
IC = 30 mA
GUMAX AND |S21|2(dB)
Figure 7. Gain at Noise Figure and Noise
Figure versus Frequency Figure 8. Maximum Unilateral Gain and
Insertion Gain versus Frequency
MMBR571LT1 MRF571 MRF5711LT1
4MOTOROLA RF DEVICE DATA
Figure 9. Collector–Base Capacitance
versus Collector–Base Voltage Figure 10. 50
W
Noise Figure
versus Frequency
Figure 11. Functional Circuit Schematic
*BIAS
TEE **SLUG TUNER *BIAS
TEE
**SLUG TUNER RF OUTPUT
RF INPUT
VBE VCE = 6 Vdc
*
D.U.T.
**MICROLAB/FXR
**SF — 11N < 1 GHz
**SF — 31N > 1 GHz
Ccb, COLLECTOR-BASE CAPACITANCE (pF)
2
1.6
1.2
0.8
0.4
01086420
Vcb, COLLECTOR–BASE VOLTAGE (VOLTS)
0.15
f, FREQUENCY (GHz)
0.2 0.5 1 2
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
f = 1 MHz
NF
VCE = 6 Vdc
IC = 5 mA CKT = HP 11608A
Zo = 50
Ω
Γ
S =
Γ
L = 0
*MICROLAB
*HW–XXN
*AS APPLICABLE
TYPICAL CHARACTERISTICS
MRF5711LT1
5
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
GNF
Figure 12. Gain and Noise Figure
versus Frequency Figure 13. Gain and Noise Figure
versus Collector Current
Figure 14. Gain and Noise Figure
versus Collector Current Figure 15. Gain Bandwidth Product
versus Collector Current
Figure 16. GUmax and |S21|2
versus Frequency Figure 17. Insertion Gain versus
Collector Current
GNF, GAIN (dB)
40
32
0.15 f, FREQUENCY (GHz)
0.2 0.5 1 2
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
24
16
8
0
GNF NF
VCE = 6 Vdc
IC = 5 mA CKT = FIGURE 3
GNF, GAIN (dB)
16
IC, COLLECTOR CURRENT (mA)
0
NF, NOISE FIGURE (dB)
4
3
2
1
12
8
4
010 20 30 40 50
GNF
NF
VCE = 6 Vdc
f = 1 GHz
CKT = FIGURE 3
GNF, GAIN (dB)
IC, COLLECTOR CURRENT (mA)
0
NF, NOISE FIGURE (dB)
4
3
2
1
24
10 20 30 40 50
18
12
6
0
VCE = 6 Vdc
f = 500 MHz
CKT = FIGURE 3
NF
f , GAIN BANDWIDTH PRODUCT (GHz)
T
IC, COLLECTOR CURRENT (mA)
0
10
8
4
020 6040 80 100
6
2
f = 1 GHz
VCE = 8 Vdc
Zo = 50
Ω
40
32
0.15 f, FREQUENCY (GHz)
0.2 0.5 1 2
24
16
8
0
|S21|2, GAIN (dB)GUmax AND
GUmax = |S21|2
(1 – |S11|2)(1 – |S22|2)
GUmax
|S21|2
VCE = 8 Vdc
IC = 50 mA
Zo = 50
Ω
|S21|2, INSER TION GAIN (dB)
32
24
16
8
0
IC, COLLECTOR CURRENT (mA)
0 1020304050
Z
o
= 50
Ω
VCE = 6 Vdc f = 200 MHz
1 GHz
500 MHz
TYPICAL CHARACTERISTICS
MRF5711LT1
2 GHz
MMBR571LT1 MRF571 MRF5711LT1
6MOTOROLA RF DEVICE DATA
+j50
+j100
+j150
+j250
+j500
–j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25 +90
°
+120
°
+150
°
180
°
0
°
–150
°
–120
°
–90
°
–60
°
–30
°
+30
°
+60
°
S11 2
2
11.5
1.5
0.5 1S22
10 25 50 100 150 250 500
0.5
S21
0.5
0.5 2
2
1.5 S12
1
1
1.5
S21 S12
0.1 0.2 0.3
14 12 8 6 4 210 0.4
f = 0.2 GHz
Figure 18. Input/Output Reflection Coefficients
versus Frequency
VCE = 5.0 V, IC = 30 mA
MMBR571LT1
Figure 19. Forward/Reverse Transmission
Coefficients versus Frequency
VCE = 5.0 V, IC = 30 mA
f = 0.2 GHz
f = 0.2 GHz
f = 0.2 GHz
V
CE
I
C
fS11 S21 S12 S22
VCE
(Volts)
IC
(mA)
f
(MHz) |S11|∠
Ă
φ|S21|∠
Ă
φ|S12|∠
Ă
φ|S22|∠
Ă
φ
5.0 5.0 200
500
1000
1500
2000
0.68
0.52
0.50
0.51
0.52
–82 –
–142–
179
161
143
8.41
4.62
2.57
1.82
1.48
126
93
72
57
45
0.07
0.10
0.14
0.19
0.24
53
46
53
58
59
0.61
0.35
0.26
0.24
0.22
–45
–60
–71
–77
–86
15 200
500
1000
1500
2000
0.46
0.43
0.44
0.45
0.46
–125–
–169–
168
152
137
13.65
6.03
3.20
2.21
1.80
108
86
72
58
48
0.05
0.09
0.16
0.22
0.29
60
66
67
64
59
0.35
0.17
0.14
0.11
0.10
–73
–94
–111
–118
–131
30 200
500
1000
1500
2000
0.42
0.41
0.42
0.44
0.44
–148–
–177–
165
151
135
14.79
6.31
3.35
2.29
1.84
102
84
71
59
48
0.04
0.09
0.16
0.23
0.30
68
72
70
65
60
0.26
0.14
0.12
0.11
0.10
–87
–115
–135
–144
–157
50 200
500
1000
1500
2000
0.41
0.42
0.43
0.44
0.45
–159–
179
163
148
134
15.14
6.38
3.35
2.32
1.84
98
83
70
58
48
0.04
0.09
0.16
0.23
0.30
73
75
71
66
60
0.21
0.13
0.12
0.10
0.09
–96
–124
–143
–151
–163
Table 1. MMBR571LT1 Common Emitter S–Parameters
7
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
Figure 20. MRF5711LT1 Constant Gain and Noise Figure Contours
(f = 0.5 GHz)
Figure 21. MRF5711LT1 Constant Gain and noise Figure Contours
(f = 1.0 GHz)
ΓMS NF OPT
0.36 ∠ 104°
Rn
7
K
0.63
f (GHz)
0.5
NF OPT
1.20 dB
VCE = 5 V
IC = 10 mA
= Area of Instability
j1.0
j2.0j0.5
j0.2
–j0.2
–j0.5
–j1.0
–j2.0
1.2
19 18 17 1.6
1.8
1.4
20.4
0.2 0.5 1.0 2.0
ΓMS NF OPT
0.20 ∠ 162°
Rn
8
K
0.94
f (GHz)
1.0
NF OPT
1.70 dB
0.2 0.5 1.0 2.0
j1.0
j2.0j0.5
j0.2
–j0.2
–j0.5
–j1.0
–j2.0
VCE = 5 V
IC = 10 mA
= Area of Instability
1.7
1.9 2.1
2.3
6.4 15 14
MMBR571LT1 MRF571 MRF5711LT1
8MOTOROLA RF DEVICE DATA
V
CE
I
C
fS11 S21 S12 S22
VCE
(Vdc)
IC
(mA)
f
(MHz) |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
6.0 5.0 200
500
1000
1500
2000
0.79
0.72
0.69
0.66
0.65
–90
–144
–177
164
147
10.9
5.7
3.0
2.0
1.6
128
96
75
59
47
0.06
0.08
0.09
0.10
0.12
46
28
28
32
38
0.70
0.42
0.31
0.34
0.32
–45
–66
–77
–89
–94
10 200
500
1000
1500
2000
0.72
0.69
0.67
0.64
0.64
–115
–160
174
159
143
15.2
6.9
3.6
2.4
1.8
118
92
74
60
49
0.05
0.06
0.08
0.10
0.12
41
34
42
46
50
0.55
0.30
0.21
0.23
0.20
–66
–92
–108
–114
–116
50 200
500
1000
1500
2000
0.67
0.67
0.66
0.63
0.58
–159
179
174
151
138
20
8.2
3.8
2.7
2.1
102
85
72
61
51
0.02
0.04
0.07
0.10
0.14
48
58
65
64
62
0.33
0.33
0.21
0.22
0.17
–111
–142
–158
–158
–165
8.0 5.0 200
500
1000
1500
2000
0.80
0.72
0.70
0.66
0.61
–87
–141
–177
166
149
11.1
5.9
3.1
2.1
1.6
130
97
75
60
47
0.06
0.08
0.09
0.10
0.12
47
30
28
32
39
0.71
0.44
0.33
0.35
0.35
–42
–60
–68
–80
–85
10 200
500
1000
1500
2000
0.72
0.68
0.66
0.64
0.60
–113
–159
175
160
144
15.6
7.2
3.7
2.5
2.0
119
92
74
61
49
0.05
0.06
0.08
0.09
0.13
42
34
41
47
50
0.56
0.31
0.21
0.23
0.21
–61
–82
–92
–101
–103
50 200
500
1000
1500
2000
0.66
0.65
0.64
0.61
0.58
–156
–179
164
153
137
20.9
8.6
4.3
2.9
2.3
103
85
72
61
51
0.02
0.04
0.07
0.10
0.13
48
58
65
65
64
0.31
0.19
0.16
0.17
0.14
–101
–128
–144
–142
–145
Table 2. MRF5711LT1 Common Emitter S–Parameters
9
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
GNF, GAIN AT NOISE FIGURE (dB)
Figure 22. Ccb, Collector–Base Capacitance
versus Voltage Figure 23. Cib, Input Capacitance
versus Emitter Base Voltage
Figure 24. Gain at Noise Figure and Noise Figure
versus Frequency
Ccb, COLLECTOR-BASE CAPACITANCE (pF)
1.25
1
0.75
0.5
0.25
0109876543210 Vcb, COLLECTOR–BASE VOLTAGE (Vdc)
GNF
NF
f = 1 MHz
Cib, INPUT CAPACITANCE (pF)
1
3210 VBE, BASE–EMITTER VOLTAGE (Vdc)
0
2
f = 1 MHz
GNF, GAIN AT NOISE FIGURE (dB)
30
0.20.15 f, FREQUENCY (GHz)
0.3 0.6 1 1.5 2 3
25
20
15
10
0
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
VCE = 6 V
IC = 5 mA
Figure 25. Gain at Noise Figure and Noise Figure
versus Collector Current
GNF @ 500 MHz
NF @ 1 GHz
100
20
10
0
NF, NOISE FIGURE (dB)
5
4
3
2
1
0
VCE = 6 V
20 30 40 50
IC, COLLECTOR CURRENT (mA)
GNF @ 1 GHz
NF @ 500 MHz
TYPICAL CHARACTERISTICS
MRF571
MMBR571LT1 MRF571 MRF5711LT1
10 MOTOROLA RF DEVICE DATA
Figure 26. fT, Current Gain–Bandwidth Product
versus Collector Current Figure 27. GAmax, Maximum Available Gain
versus Frequency
Figure 28. 1.0 dB Compression Point
and Third Order Intercept Figure 29. GUmax and |S21|2
versus Frequency
f , CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
T
100
10
20 30 40 50
IC, COLLECTOR CURRENT (mA)
8
6
4
2
060 70 80 90 100
f = 1 GHz
VCE = 5 Vdc
8 Vdc
GAMAX, MAXIMUM AV AILABLE GAIN (dB)
0.60.4
30
f, FREQUENCY (GHz)
123
27
24
21
18
15
12
9
6
3
0
VCE = 8 V
IC = 50 mA
GAmax = |S21|
|S12|(K
±
K2–1
Ǹ
), K
≥
1
P , OUTPUT POWER (dBm)
out
–5–10
+50
Pin, INPUT POWER (dBm)
+40
+30
+20
+10
+5
0 +5 +10 +15 +2
0+25 +30 +35 +40
COMP. PT. VCC = 8 Vdc
IC = 50 mA
f = 500 MHz
1000 MHz
3RD ORDER INTERCEPT
3RD ORDER PRODUCTS
30
0.20.15 f, FREQUENCY (GHz)
0.3 0.6 1 1.5 2 3
25
20
15
10
5
GUmax AND |S21|2GAIN (dB)
|S21|2
GUmax VCE = 8 V
IC = 50 mA
GUmax = |S21|2
(1 – |S11|2)(1 – |S22|2)
1 dB
0
TYPICAL CHARACTERISTICS
MRF571
11
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
Figure 30. Input/Output Reflection Coefficients
versus Frequency (GHz)
VCE = 6.0 V, IC = 5.0 mA
Figure 31. Forward/Reverse Transmission
Coefficients versus Frequency (GHz)
VCE = 6.0 V, IC = 5.0 mA
+j50
+j100
+j150
+j250
+j500
–j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
25 50 150 250 50010
2
1.5
1
0.5 21.5 10.5
S11
+90
°
+60
°
+30
°
0
°
–30
°
–60
°
–90
°
–120
°
–150
°
180
°
+150
°
+120
°
+105
°
+135
°
+165
°
–165
°
–135
°
–105
°
–75
°
–45
°
–15
°
+15
°
+45
°
+75
°
12 10 8 6 4 2
S21
S21 S12
0.5 0.5
11.5
1.5
2
1
S12
S22
100 20.1
f = 0.2 GHz
f = 0.2 GHz
f = 0.2 GHz f = 0.2 GHz
MRF571
V
CE
I
C
fS11 S21 S12 S22
VCE
(Volts)
IC
(mA)
f
(MHz) |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
6.0 5 200
500
1000
1500
2000
0.74
0.62
0.61
0.65
0.70
–86
–143
178
158
140
10.5
5.5
3.0
2.0
1.6
129
97
78
62
51
0.06
0.08
0.09
0.11
0.14
48
33
37
44
51
0.69
0.41
0.28
0.26
0.27
–42
–59
–69
–88
–99
10 200
500
1000
1500
2000
0.64
0.58
0.59
0.63
0.67
–111
–160
168
151
134
15
6.9
3.7
2.5
2.0
118
93
77
64
53
0.04
0.06
0.09
0.12
0.16
44
42
52
56
57
0.53
0.27
0.16
0.16
0.16
–59
–77
–91
–113
–118
50 200
500
1000
1500
2000
0.56
0.57
0.60
0.62
0.66
–160
176
156
152
127
20.4
8.4
4.4
2.9
2.4
102
86
75
64
53
0.02
0.05
0.09
0.13
0.18
57
67
70
68
62
0.27
0.14
0.11
0.13
0.11
–98
–130
–164
–175
–178
8.0 5 200
500
1000
1500
2000
0.75
0.62
0.60
0.64
0.69
–83
–140
–179
159
141
10.7
5.1
3.7
2.1
1.7
129
98
78
62
52
0.06
0.08
0.09
0.10
0.13
49
34
38
45
52
0.71
0.43
0.31
0.29
0.29
–39
–54
–62
–80
–91
10 200
500
1000
1500
2000
0.64
0.52
0.52
0.52
0.57
–99
–152
170
150
133
15.1
7.1
3.7
2.5
2.0
120
94
76
62
51
0.05
0.07
0.10
0.13
0.18
46
45
54
56
55
0.54
0.32
0.15
0.16
0.16
–60
–75
–82
–108
–107
50 200
500
1000
1500
2000
0.52
0.52
0.56
0.54
0.59
–153
178
157
139
126
19.6
8.1
4.1
2.8
2.2
102
86
73
62
52
0.03
0.05
0.10
0.13
0.19
56
67
70
68
63
0.28
0.16
0.06
0.11
0.10
–92
–98
–130
–146
–137
Table 3. MRF571 Common Emitter S–Parameters
MMBR571LT1 MRF571 MRF5711LT1
12 MOTOROLA RF DEVICE DATA
Figure 32. MRF571 Constant Gain and Noise Figure Contours
VCE = 6.0 V, IC = 5.0 mA
f = 500 MHz
— REGION OF INSTABILITY
f (GHz) NF OPT (dB) Rn (Ω) NF50 Ω (dB)
0.5 0.9 9.3 1.3
ΓMS NF OPT K
0.49 ∠74°0.58
VCE = 6.0 V, IC = 5.0 mA
f = 1.0 GHz
f (GHz) NF OPT (dB) Rn (Ω) NF50 Ω (dB)
1.0 1.5 7.5 2.2
ΓMS
0.89 ∠–179°
ΓMS NF OPT
0.48 ∠134°
ΓML
0.81 ∠66°
+j50
+j100
+j150
+j250
+j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
–j500
25 50 25010 500150
17 16
0.9
1
100
Γ
MS NF OPT
18 1.5 2
+j50
+j100
+j150
+j250
+j500
–j250
–j150
–j100
–j50
–j25
–j10
0
+j10
+j25
–j500
25 50 25010 500150100
3
2
2.5
1.5
Γ
MS NF OPT10
12
14
Γ
MS
13
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
Figure 33. MRF571 Test Circuit Schematic
R1
FB
C1, C4, C5, C6, C8, C9 — 100 pF Chip Capacitor
C2, C3 — 0.8–8.0 pF Johanson Capacitor
C7, C10 — 10 µF Tantalum Capacitor
R1 — 1.0 kOhms Res.
RFC — VK–200, Ferroxcube
FB — Ferrite Bead, Ferroxcube 56–590–65/3B
Board Material — 0.0625″ Glass Teflon, εr = 2.55
TL1, TL7, TL8 — Microstrip 0.162″ x 0.600″
TL2 — Microstrip 0.162″ x 1.060″
TL3 — Microstrip 0.162″ x 0.700″
TL4, TL5 — Microstrip 0.162″ x 0.440″
TL6 — Microstrip 0.162″ x 1.140″
TL8, TL9 — Microstrip 0.020″ x 2.130″
RFC RFC
VBB VCC
C7 C8 C9 C10
FB
C6C5
TL9 TL10
TL1 C
1TL2 TL3 TL4 TL5 TL6 TL7 C
4TL8
RF
INPUT RF
OUTPUT
D.U.T.
C2 C3
MMBR571LT1 MRF571 MRF5711LT1
14 MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 318–08
ISSUE AF
MMBR571LT1
DJ
K
L
A
C
BS
H
GV
3
12DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 317–01
ISSUE E
MRF571
NOTES:
1. DIMENSION D NOT APPLICABLE IN ZONE N.
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
3
1
42
SEATING
PLANE
L
K
D
A
N
G
F
C
4 PL
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A4.44 5.21 0.175 0.205
C1.90 2.54 0.075 0.100
D0.84 0.99 0.033 0.039
F0.20 0.30 0.080 0.012
G0.76 1.14 0.030 0.045
K7.24 8.13 0.285 0.320
L10.54 11.43 0.415 0.450
N––– 1.65 ––– 0.065
15
MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA
CASE 318A–05
ISSUE R
MRF5711LT1
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. EMITTER
4. BASE
DIM
AMIN MAX MIN MAX
INCHES
2.80 3.04 0.110 0.120
MILLIMETERS
B1.20 1.39 0.047 0.055
C0.84 1.14 0.033 0.045
D0.39 0.50 0.015 0.020
F0.79 0.93 0.031 0.037
G1.78 2.03 0.070 0.080
H0.013 0.10 0.0005 0.004
J0.08 0.15 0.003 0.006
K0.46 0.60 0.018 0.024
L0.445 0.60 0.0175 0.024
R0.72 0.83 0.028 0.033
S2.11 2.48 0.083 0.098
NOTES:
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5. CONTROLLING DIMENSION: MILLIMETER.
G
S
R
CJ
A
L
FD
B
1
34
2
H
K
MMBR571LT1 MRF571 MRF5711LT1
16 MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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MMBR571LT1/D
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