AY Sicsossemomes 2N6035/2N6036 2N6038/2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS a 2N6036 AND 2N6039 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N60388 and 2N6039_ are _ silicon epitaxial-base NPN _ power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. The complementary PNP types are 2N6035 and 2N6036 respectively. SOT-32 INTERNAL SCHEMATIC DIAGRAM sco7aso E (3} sco7aso E(3) R1 Typ. = 10 KQ Re Typ. = 150 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit PNP 2N6035 2N6036 NPN 2N6038 2N6039 Vcso |Collector-Base Voltage (le = 0) 60 80 Vv Vceo |Collector-Emitter Voltage (lp = 0) 60 80 Vv VeEBOo Emitter-Base Voltage (Ic = 0) 5 V Ic Collector Current A Icom Collector Peak Current 8 A lB Base Current 0.1 A Ptot |Total Dissipation at Tc < 25 C 40 w Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 c For PNP types voltage and current values are negative. October 1995 1/4 2N6035/2N6036/2N6038/2N6039 THERMAL DATA Rthj-case |Thermal Resistance Junction-case Max 3.12 C/W Rthj-amb | Thermal Resistance Junction-ambient Max 83.3 C/W ELECTRICAL CHARACTERISTICS (Tease = 25 C unlessotherwise specified) Symbol Parameter Test Conditions Min. | Typ. Max. Unit IcEX Collector Cut-off Voce = rated Vceo 0.1 mA Current (Vee =-1.5V) |Vce =rated Veco Te = 125C 0.5 mA IcBo Collector Cut-off Voce = rated Vcspo 0.1 mA Current (le = 0) IcEO Collector Cut-off Voce = rated Vceo 0.1 mA Current (lp = 0) leBo Emitter Cut-off Current |Ves = 5 V 2 mA (Ic = 0) Vceo(sus)* | Collector-Emitter lc =100 mA Sustaining Voltage for 2N6035/2N6038 60 Vv for 2N6036/2N6039 80 Vv VoceE(sat)* | Collector-Emitter lc=2A lj =8mA 2 V Saturation Voltage Ilc=4A Ip=40mA 3 Vv Vee(sat)* |Base-Emitter Ilc=4A Ip = 40 mA V Saturation Voltage VBE* Base-Emitter Voltage Ic=2A VcE=3V 2.8 Vv hre* DC Current Gain Ic=0.5A VceeE=3V 500 Ilc=2A VceE=3V 750 15000 Ilc=4A VcE=3 V 100 hfe Small Signal Current Ic =0.75A Voce =10V f = 1KHz 25 Gain CcBo Collector Base le=0 Vcop=10V f = 1MHz Capacitance for NPN types 100 pF for PNP types 200 pF Pulsed: Pulse duration = 300 pis, dutycycle 1.5% 2/4 ka SGS-:THOMSON Tf MICROELECTRONICS 2N6035/2N6036/2N6037/2N6038 SOT-32 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 bt 0.49 0.75 0.019 0.030 Cc 2.4 2.7 0.04 0.106 cl 1.2 0.047 D 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 G 3 3.2 0.118 0.126 H 2.54 0.100 C A i r Le i. = cl 8 | P 1b AL bt e 0016114 3/4 MITROELECTROMICS 2N6035/2N6036/2N6038/2N6039 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compments in life supportdevices or systems without express written approval of SGS-THOMSON Microelectaics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectrorics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 AS] Sicpon scmoncs