BC847BVN
Document number: DS30627 Rev. 6 - 2
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May 2013
© Diodes Incorporated
BC847BVN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in One Package
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.003 grams (approximate)
Ordering Information (Note 4 & 5)
Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
BC847BVN-7 AEC-Q101 KAW 7 8 3000
BC847BVNQ-7 Automotive KAW 7 8 3000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Bottom View Device Schematic
Top View
C
1
Q
1
Q
2
B
2
E
2
C
2
E
1
B
1
KAW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
KAW YM
SOT563
e3
BC847BVN
Document number: DS30627 Rev. 6 - 2
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May 2013
© Diodes Incorporated
BC847BVN
Maximum Ratings: NPN, BC847B Type (Q1) (@TA = +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Emitter Current IEM 200 mA
Maximum Ratings: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -6 V
Collector Current IC -100 mA
Peak Collector Current ICM -200 mA
Peak Emitter Current IEM -200 mA
Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Total Device PD 150 mW
Thermal Resistance, Junction to Ambient (Note 6) R
JA 833 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Note: 6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Thermal Characteristics – Total Device
-50 050100150
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1. Power Dissipation vs. Ambient Temperature
Total Device
A
°
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
R = 833 C/W
JA
BC847BVN
Document number: DS30627 Rev. 6 - 2
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BC847BVN
Electrical Characteristics: NPN, BC847B Type (Q1) (@TA = +25°C unless otherwise specified.)
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 50 — — V IC = 100µA, IB = 0
Collector-Emitter Breakdown Voltage BVCEO 45 — — V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 — — V IE = 100µA, IC = 0
DC Current Gain hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage VCE(sat) — 90
200
250
600 mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(sat) — 700
900 — mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage VBE(on) 580
—
660
—
700
720 mV VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current ICBO —
—
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = +150°C
Gain Bandwidth Product fT 100 300 — MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz
Note: 7. Short duration pulse test used to minimize self-heating effect.
1
10
100
1,000
1.0 10 1000.10.01
h D
C
C
U
R
R
E
N
T
G
AI
N
FE,
I , COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain vs. Collector Current
(BC847B Type)
C
0
0.1
0.2
0.3
0.4
0.5
0.1 1.0 10 100
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE
I , COLLECTOR CURRENT (mA)
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC847B Type)
C
I
I = 20
C
B
T = 100C
A
°
T = 25C
A
°
T = -50C
A
°
6
10
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance Characteristics (BC847B Type)
R
C
obo
C
ibo
f = 1MHz
10
100
1,000
0.1 1.0 10 100
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Figure 5. Typical Gain-Bandwidth Product
vs. Collector Current (BC847B Type)
C
T = 25C
A
°
V = 10V
CE
V =
CE
5V
V =
CE
2V
BC847BVN
Document number: DS30627 Rev. 6 - 2
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Electrical Characteristics: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.)
Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -50 — — V IC = -100µA, IB = 0
Collector-Emitter Breakdown Voltage BVCEO -45 — — V IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO -6 — — V IE = -100µA, IC = 0
DC Current Gain hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage VCE(sat) — -75
-250
-300
-650 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(sat) — -700
-850
—
-950 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage VBE(on) -600
—
-650
—
-750
-820 mV VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector-Cutoff Current ICBO —
—
—
—
-15
-4.0
nA
µA
VCB = -30V
VCB = -30V, TA = +150°C
Gain Bandwidth Product fT 100 200 — MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz
Note: 8. Short duration pulse test used to minimize self-heating effect.
-1
-10
-100
-1,000
-1 -10 -100 -1,000
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Figure 6. Typical DC Current Gain vs. Collector Current
(BC857B Type)
C
-1-0.1 -10 -100 -1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 7. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC857B Type)
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
-0.1
-0.2
-0.3
-0.4
-0.5
I
C
I
B
= 10
6
10
Cibo
Cobo
C
A
P
A
C
I
T
A
N
C
E (p
F
)
V , REVERSE VOLTAGE (V)
Figure 8. Typical Capacitance Characteristics (BC857B Type)
R
f = 1MHz
-10
-100
-1,000
-1 -10 -100
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
t
I , COLLECTOR CURRENT (mA)
Figure 9. Typical Gain-Bandwidth Product
vs. Collector Current (BC857B Type)
C
BC847BVN
Document number: DS30627 Rev. 6 - 2
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© Diodes Incorporated
BC847BVN
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
A
M
L
BC
H
K
G
D
X
Z
Y
C1
C2
C2
G
BC847BVN
Document number: DS30627 Rev. 6 - 2
6 of 6
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May 2013
© Diodes Incorporated
BC847BVN
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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