LM386N-3/NOPB - NATIONAL SEMICONDUCTOR

GAIN

15 k

150 1.35 k

15 k

50 k

3+ INPUT

VOUT

GND

- INPUT 2

50 k

BYPASS 7

Product

Folder

Order

Now

Technical

Documents

Tools &

Software

Support &

Community

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM386

SNAS545C –MAY 2004–REVISED MAY 2017

LM386 Low Voltage Audio Power Amplifier

1 Features

1• Battery Operation

• Minimum External Parts

• Wide Supply Voltage Range: 4 V–12 V or

5 V–18 V

• Low Quiescent Current Drain: 4 mA

• Voltage Gains from 20 to 200

• Ground-Referenced Input

• Self-Centering Output Quiescent Voltage

• Low Distortion: 0.2% (AV= 20, VS=6V,RL= 8 Ω,

PO= 125 mW, f = 1 kHz)

• Available in 8-Pin MSOP Package

2 Applications

• AM-FM Radio Amplifiers

• Portable Tape Player Amplifiers

• Intercoms

• TV Sound Systems

• Line Drivers

• Ultrasonic Drivers

• Small Servo Drivers

• Power Converters

3 Description

The LM386M-1 and LM386MX-1 are power amplifiers

designed for use in low voltage consumer

applications. The gain is internally set to 20 to keep

external part count low, but the addition of an external

resistor and capacitor between pins 1 and 8 will

increase the gain to any value from 20 to 200.

The inputs are ground referenced while the output

automatically biases to one-half the supply voltage.

The quiescent power drain is only 24 mW when

operating from a 6-V supply, making the LM386M-1

and LM386MX-1 ideal for battery operation.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

LM386N-1 PDIP (8) 9.60 mm × 6.35 mm

LM386N-3 PDIP (8) 9.60 mm × 6.35 mm

LM386N-4 PDIP (8) 9.60 mm × 6.35 mm

LM386M-1 SOIC (8) 4.90 mm × 3.90 mm

LM386MX-1 SOIC (8) 4.90 mm × 3.90 mm

LM386MMX-1 VSSOP (8) 3.00 mm × 3.00 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Schematic

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Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 3

6.1 Absolute Maximum Ratings ...................................... 3

6.2 ESD Ratings ............................................................ 3

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 4

6.6 Typical Characteristics.............................................. 5

7 Parameter Measurement Information .................. 6

8 Detailed Description.............................................. 7

8.1 Overview................................................................... 7

8.2 Functional Block Diagram......................................... 7

8.3 Feature Description................................................... 7

8.4 Device Functional Modes.......................................... 7

9 Application and Implementation .......................... 8

9.1 Application Information.............................................. 8

9.2 Typical Application ................................................... 8

10 Power Supply Recommendations ..................... 15

11 Layout................................................................... 16

11.1 Layout Guidelines ................................................. 16

11.2 Layout Examples................................................... 16

12 Device and Documentation Support................. 18

12.1 Device Support...................................................... 18

12.2 Documentation Support ....................................... 18

12.3 Related Links ........................................................ 18

12.4 Receiving Notification of Documentation Updates 18

12.5 Community Resources.......................................... 18

12.6 Trademarks........................................................... 18

12.7 Electrostatic Discharge Caution............................ 18

12.8 Glossary................................................................ 18

13 Mechanical, Packaging, and Orderable

Information........................................................... 19

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision B (March 2017) to Revision C Page

• Changed devices LM386M-1/LM386MX-1 To: LM386 in the data sheet title........................................................................ 1

• Changed From: LM386N-4 To: Speaker Impedance in the Recommended Operating Conditions table.............................. 4

• Changed From: 5 Ωto 12 ΩTo: 5 V to 12 V for Supply Voltage in Table 1.......................................................................... 8

• Changed kW To: kΩin the Gain Control section ................................................................................................................... 8

• Changed kW To: kΩin the Input Biasing section................................................................................................................... 9

• Changed Figure 11................................................................................................................................................................. 9

• Changed From: 5 Ωto 12 ΩTo: 5 V to 12 V for Supply Voltage in Table 2........................................................................ 10

• Changed Figure 13............................................................................................................................................................... 10

• Changed From: 5 Ωto 12 ΩTo: 5 V to 12 V for Supply Voltage in Table 3........................................................................ 11

• Changed Figure 15............................................................................................................................................................... 11

• Changed From: 5 Ωto 12 ΩTo: 5 V to 12 V for Supply Voltage in Table 4........................................................................ 12

• Changed Figure 17............................................................................................................................................................... 12

• Changed From: 5 Ωto 12 ΩTo: 5 V to 12 V for Supply Voltage in Table 5........................................................................ 13

• Changed From: 5 Ωto 12 ΩTo: 5 V to 12 V for Supply Voltage in Table 6........................................................................ 14

• Changed Figure 21............................................................................................................................................................... 14

• Changed From: 5 Ωto 12 ΩTo: 5 V to 12 V for Supply Voltage in Table 7........................................................................ 15

• Changed Figure 23............................................................................................................................................................... 15

Changes from Revision A (May 2004) to Revision B Page

• Added LM386MX-1 device to the data sheet. ....................................................................................................................... 1

• Added Device Information, Application and Implementation, Power Supply Recommendation, Layout, and Device

and Documentation Support sections..................................................................................................................................... 1

• Inserted Functional Block Diagram......................................................................................................................................... 7

GAIN 1

- INPUT

+ INPUT

GND

GAIN

BYPASS

VOUT

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5 Pin Configuration and Functions

D Package

8-Pin MSOP

Top View

Pin Functions

PIN TYPE DESCRIPTION

NAME NO.

GAIN 1 – Gain setting pin

–INPUT 2 I Inverting input

+INPUT 3 I Noninverting input

GND 4 P Ground reference

VOUT 5 O Output

VS6 P Power supply voltage

BYPASS 7 O Bypass decoupling path

GAIN 8 – Gain setting pin

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN MAX UNIT

Supply Voltage, VCC LM386N-1/-3, LM386M-1 15 V

LM386N-4 22

Package Dissipation LM386N 1.25 WLM386M 0.73

LM386MM-1 0.595

Input Voltage, VI–0.4 0.4 V

Storage temperature, Tstg –65 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings VALUE UNIT

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2) ±1000

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6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT

VCC Supply Voltage 4 12 V

LM386N-4 5 18 V

Speaker Impedance 4 Ω

VI Analog input voltage –0.4 0.4 V

TA Operating free-air temperature 0 70 °C

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1) LM386 LM386 LM386

UNITD (SOIC) DGK (VSSOP) P (PDIP)

888

RθJA Junction-to-ambient thermal resistance 115.7 169.3 53.4 °C/W

RθJC(top) Junction-to-case (top) thermal resistance 59.7 73.1 42.1 °C/W

RθJB Junction-to-board thermal resistance 56.2 100.2 30.6 °C/W

ψJT Junction-to-top characterization parameter 12.4 9.2 19.0 °C/W

ψJB Junction-to-board characterization parameter 55.6 99.1 50.5 °C/W

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VSOperating Supply Voltage LM386N-1, -3, LM386M-1, LM386MM-1 4 12 V

LM386N-4 5 18

IQQuiescent Current VS= 6 V, VIN = 0 4 8 mA

POUT Output Power

VS= 6 V, RL= 8 Ω, THD = 10%

(LM386N-1, LM386M-1, LM386MM-1) 250 325

VS= 9 V, RL= 8 Ω, THD = 10%

(LM386N-3) 500 700

VS= 16 V, RL= 32 Ω, THD = 10%

(LM386N-4) 700 100

AVVoltage Gain VS= 6 V, f = 1 kHz 26 dB

10 µF from Pin 1 to 8 46

BW Bandwidth VS= 6 V, Pins 1 and 8 Open 300 kHz

THD Total Harmonic Distortion VS= 6 V, RL= 8 Ω, POUT = 125 mW

f = 1 kHz, Pins 1 and 8 Open 0.2%

PSRR Power Supply Rejection Ratio VS= 6 V, f = 1 kHz, CBYPASS = 10 μF

Pins 1 and 8 Open, Referred to Output 50 dB

RIN Input Resistance 50 kΩ

IBIAS Input Bias Current VS= 6 V, Pins 2 and 3 Open 250 nA

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6.6 Typical Characteristics

Figure 1. Supply Current vs Supply Voltage Figure 2. Power Supply Rejection vs Frequency

Figure 3. Output Voltage vs Supply Voltage Figure 4. Voltage Gain vs Frequency

Figure 5. Total Harmonic Distortion vs Frequency Figure 6. Total Harmonic Distortion vs Power Out

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Typical Characteristics (continued)

Figure 7. Device Dissipation vs Output Power Figure 8. Device Dissipation vs Output Power

Figure 9. Device Dissipation vs Output Power

7 Parameter Measurement Information

All parameters are measured according to the conditions described in the Specifications section.

Gain

Circuitry

Bias

Circuitry

Bypass

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8 Detailed Description

8.1 Overview

The LM386 is a mono low voltage amplifier that can be used in a variety of applications. It can drive loads from 4

Ωto 32 Ω. The gain is internally set to 20 but it can be modified from 20 to 200 by placing a resistor and

capacitor between pins 1 and 8. This device comes in three different 8-pin packages as PDIP, SOIC and VSSOP

to fit in different applications.

8.2 Functional Block Diagram

8.3 Feature Description

There is an internal 1.35-KΩresistor that sets the gain of this device to 20. The gain can be modified from 20 to

200. Detailed information about gain setting can be found in the Detailed Design Procedure section.

8.4 Device Functional Modes

As this is an Op Amp it can be used in different configurations to fit in several applications. The internal gain

setting resistor allows the LM386 to be used in a very low part count system. In addition a series resistor can be

placed between pins 1 and 5 to modify the gain and frequency response for specific applications.

VIN

10 k 3

0.05 µF

250 µF

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9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

9.1 Application Information

Below are shown different setups that show how the LM386 can be implemented in a variety of applications.

9.2 Typical Application

9.2.1 LM386 with Gain = 20

Figure 10 shows the minimum part count application that can be implemented using LM386. Its gain is internally

set to 20.

Figure 10. LM386 with Gain = 20

9.2.1.1 Design Requirements

Table 1. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE

Load Impedance 4 Ωto 32 Ω

Supply Voltage 5 V to 12 V

9.2.1.2 Detailed Design Procedure

9.2.1.2.1 Gain Control

To make the LM386 a more versatile amplifier, two pins (1 and 8) are provided for gain control. With pins 1 and 8

open the 1.35-kΩresistor sets the gain at 20 (26 dB). If a capacitor is put from pin 1 to 8, bypassing the 1.35-kΩ

resistor, the gain will go up to 200 (46 dB). If a resistor is placed in series with the capacitor, the gain can be set

to any value from 20 to 200. Gain control can also be done by capacitively coupling a resistor (or FET) from pin 1

to ground.

Additional external components can be placed in parallel with the internal feedback resistors to tailor the gain and

frequency response for individual applications. For example, we can compensate poor speaker bass response by

frequency shaping the feedback path. This is done with a series RC from pin 1 to 5 (paralleling the internal

15-kΩresistor). For 6 dB effective bass boost: R ~= 15 kΩ, the lowest value for good stable operation is R = 10

kΩif pin 8 is open. If pins 1 and 8 are bypassed then R as low as 2 kΩcan be used. This restriction is because

the amplifier is only compensated for closed-loop gains greater than 9.

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9.2.1.2.2 Input Biasing

The schematic shows that both inputs are biased to ground with a 50 kΩresistor. The base current of the input

transistors is about 250 nA, so the inputs are at about 12.5 mV when left open. If the dc source resistance driving

the LM386 is higher than 250 kΩit will contribute very little additional offset (about 2.5 mV at the input, 50 mV at

the output). If the dc source resistance is less than 10 kΩ, then shorting the unused input to ground will keep the

offset low (about 2.5 mV at the input, 50 mV at the output). For dc source resistances between these values we

can eliminate excess offset by putting a resistor from the unused input to ground, equal in value to the dc source

resistance. Of course all offset problems are eliminated if the input is capacitively coupled.

When using the LM386 with higher gains (bypassing the 1.35 kΩresistor between pins 1 and 8) it is necessary

to bypass the unused input, preventing degradation of gain and possible instabilities. This is done with a 0.1 μF

capacitor or a short to ground depending on the dc source resistance on the driven input.

9.2.1.3 Application Curve

Figure 11. Supply Current vs Supply Voltage

VIN

10 k 3

0.05 µF

250 µF

LM386

10 µF

BYPASS

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9.2.2 LM386 with Gain = 200

Figure 12. LM386 with Gain = 200

9.2.2.1 Design Requirements

Table 2. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE

Load Impedance 4 Ωto 32 Ω

Supply Voltage 5 V to 12 V

9.2.2.2 Detailed Design Procedure

The Detailed Design Procedure can be found in the Detailed Design Procedure section.

9.2.2.3 Application Curve

Figure 13. Supply Current vs Supply Voltage

VIN

10 k 3

0.05 µF

250 µF

LM386

BYPASS

1.2 k

10 µF

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9.2.3 LM386 with Gain = 50

Figure 14. LM386 with Gain = 50

9.2.3.1 Design Requirements

Table 3. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE

Load Impedance 4 Ωto 32 Ω

Supply Voltage 5 V to 12 V

9.2.3.2 Detailed Design Procedure

The Detailed Design Procedure can be found in the Detailed Design Procedure section.

9.2.3.3 Application Curve

Figure 15. Supply Current vs Supply Voltage

3 V ± 15mA 3

50 µF

LM386

10 µF

47 k

0.01 µF

BYPASS

390

0.05 µF

4.7 k

0.01 µF

ELDEMA

CF-S-2158

f = 1 kHz

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9.2.4 Low Distortion Power Wienbridge Oscillator

Figure 16. Low Distortion Power Wienbridge Oscillator

9.2.4.1 Design Requirements

Table 4. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE

Load Impedance 4 Ωto 32 Ω

Supply Voltage 5 V to 12 V

9.2.4.2 Detailed Design Procedure

The Detailed Design Procedure can be found in the Detailed Design Procedure section.

9.2.4.3 Application Curve

Figure 17. Supply Current vs Supply Voltage

VIN

10 k 3

0.05 µF

250 µF

LM386

10 Ÿ

0.033 µF

10 k

BYPASS

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9.2.5 LM386 with Bass Boost

Figure 18. LM386 with Bass Boost

9.2.5.1 Design Requirements

Table 5. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE

Load Impedance 4 Ωto 32 Ω

Supply Voltage 5 V to 12 V

9.2.5.2 Detailed Design Procedure

The Detailed Design Procedure can be found in the Detailed Design Procedure section.

9.2.5.3 Application Curve

Figure 19. Voltage Gain vs Frequency

10 k

LM386

1 k

50 µF

30 k

f = 1 kHz

0.1 µF

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9.2.6 Square Wave Oscillator

Figure 20. Square Wave Oscillator

Table 6. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE

Load Impedance 4 Ωto 32 Ω

Supply Voltage 5 V to 12 V

9.2.6.1 Detailed Design Procedure

The Detailed Design Procedure can be found in the Detailed Design Procedure section.

9.2.6.2 Application Curve

Figure 21. Supply Current vs Supply Voltage

LM386

BYPASS

10 k

VOL

10 k C1

2200 pF

0.05 µF

10 µF

FROM

DETECTOR

8 Ÿ

SPEAKER

0.05 µF

250 µF

FERRITE

BEAD

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9.2.7 AM Radio Power Amplifier

Figure 22. AM Radio Power Amplifier

9.2.7.1 Design Requirements

Table 7. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE

Load Impedance 4 Ωto 32 Ω

Supply Voltage 5 V to 12 V

9.2.7.2 Detailed Design Procedure

The Detailed Design Procedure can be found in the Detailed Design Procedure section.

9.2.7.3 Application Curve

Figure 23. Supply Current vs Supply Voltage

10 Power Supply Recommendations

The LM386 is specified for operation up to 12 V or 18 V. The power supply should be well regulated and the

voltage must be within the specified values. It is recommended to place a capacitor to GND close to the LM386

power supply pin.

OUTPUT

LM386 10

0.05uF

250uF

INPUT

Connection to ground plane Connection to power 5V

Top layer traces Top layer ground plane

OUTPUT

LM386 10

0.05uF

250uF

INPUT

Connection to ground plane Connection to power 5V

Top layer traces Top layer ground plane

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11 Layout

11.1 Layout Guidelines

Place all required components as close as possible to the device. Use short traces for the output to the speaker

connection. Route the analog traces far from the digital signal traces and avoid crossing them.

11.2 Layout Examples

Figure 24. Layout Example for Minimum Parts Gain = 20 dB on PDIP package

Figure 25. Layout Example for Minimum Parts Gain = 20 dB on SOIC package

LM386

INPUT

OUTPUT

0.05uF

250uF

Connection to ground plane Connection to power 5V

Top layer traces Top layer ground plane

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Layout Examples (continued)

Figure 26. Layout Example for Minimum Parts Gain = 20 dB on VSSOP package

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12 Device and Documentation Support

12.1 Device Support

12.1.1 Development Support

12.2 Documentation Support

12.3 Related Links

The table below lists quick access links. Categories include technical documents, support and community

resources, tools and software, and quick access to order now.

Table 8. Related Links

PARTS PRODUCT FOLDER ORDER NOW TECHNICAL

DOCUMENTS TOOLS &

SOFTWARE SUPPORT &

COMMUNITY

LM386M-1 Click here Click here Click here Click here Click here

LM386MX-1 Click here Click here Click here Click here Click here

12.4 Receiving Notification of Documentation Updates

To receive notification of documentation updates — go to the product folder for your device on ti.com. In the

upper right-hand corner, click the Alert me button to register and receive a weekly digest of product information

that has changed (if any). For change details, check the revision history of any revised document.

12.5 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

12.6 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.7 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

12.8 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

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13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

www.ti.com 6-Feb-2020

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM386M-1/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) SN Level-1-260C-UNLIM 0 to 70 LM386

M-1

LM386MMX-1/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS

& no Sb/Br) SN Level-1-260C-UNLIM 0 to 70 Z86

LM386MX-1/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) SN Level-1-260C-UNLIM 0 to 70 LM386

M-1

LM386N-1/NOPB ACTIVE PDIP P 8 40 Green (RoHS

& no Sb/Br) Call TI | SN Level-1-NA-UNLIM 0 to 70 LM

386N-1

LM386N-3/NOPB ACTIVE PDIP P 8 40 Green (RoHS

& no Sb/Br) SN Level-1-NA-UNLIM 0 to 70 LM

386N-3

LM386N-4/NOPB ACTIVE PDIP P 8 40 Green (RoHS

& no Sb/Br) Call TI | SN Level-1-NA-UNLIM 0 to 70 LM

386N-4

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

PACKAGE OPTION ADDENDUM

www.ti.com 6-Feb-2020

Addendum-Page 2

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LM386MMX-1/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM386MX-1/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 26-May-2017

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LM386MMX-1/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0

LM386MX-1/NOPB SOIC D 8 2500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 26-May-2017

Pack Materials-Page 2

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PACKAGE OUTLINE

.228-.244 TYP

[5.80-6.19]

.069 MAX

[1.75]

6X .050

[1.27]

8X .012-.020

[0.31-0.51]

.150

[3.81]

.005-.010 TYP

[0.13-0.25]

0 - 8 .004-.010

[0.11-0.25]

.010

[0.25]

.016-.050

[0.41-1.27]

4X (0 -15 )

.189-.197

[4.81-5.00]

NOTE 3

B .150-.157

[3.81-3.98]

NOTE 4

4X (0 -15 )

(.041)

[1.04]

SOIC - 1.75 mm max heightD0008A

SMALL OUTLINE INTEGRATED CIRCUIT

4214825/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.

Dimensioning and tolerancing per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed .006 [0.15] per side.

4. This dimension does not include interlead flash.

5. Reference JEDEC registration MS-012, variation AA.

.010 [0.25] C A B

PIN 1 ID AREA

SEATING PLANE

.004 [0.1] C

SEE DETAIL A

DETAIL A

TYPICAL

SCALE 2.800

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EXAMPLE BOARD LAYOUT

.0028 MAX

[0.07]

ALL AROUND

.0028 MIN

[0.07]

ALL AROUND

(.213)

[5.4]

6X (.050 )

[1.27]

8X (.061 )

[1.55]

8X (.024)

[0.6]

(R.002 ) TYP

[0.05]

SOIC - 1.75 mm max heightD0008A

SMALL OUTLINE INTEGRATED CIRCUIT

4214825/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

METAL SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

EXPOSED

METAL

OPENING

SOLDER MASK METAL UNDER

SOLDER MASK

DEFINED

EXPOSED

METAL

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:8X

SYMM

SEE

DETAILS

SYMM

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EXAMPLE STENCIL DESIGN

8X (.061 )

[1.55]

8X (.024)

[0.6]

6X (.050 )

[1.27] (.213)

[5.4]

(R.002 ) TYP

[0.05]

SOIC - 1.75 mm max heightD0008A

SMALL OUTLINE INTEGRATED CIRCUIT

4214825/C 02/2019

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLE

BASED ON .005 INCH [0.125 MM] THICK STENCIL

SCALE:8X

SYMM

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