SOT223
(Plastic)
On-State Current
1 Amp
FT01...N
SURFACE MOUNT TRIAC
The FT01 series of TRIACs uses a high
performance PNPN technology.
These parts are intended for general
purpose applications where logic
compatible gate sensitivity is required
using surface mount technology.
Jan - 02
Absolute Maximum Ratings, according to IEC publication No. 134
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Critical rate of rise of on-state current
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER CONDITIONS Min. Max. Unit
Gate Trigger Current
< 3 mA to < 25 mA
Off-State Voltage
200 V ÷ 400 V
SYMBOL
I
TSM
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
All Conduction Angle, T
tab
= 90 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t = 10 ms, Half Cycle
20 µs max.
20 µs max.
20 ms max.
I
G
= 50 mA, di
G
/dt = 0.1 A/µs
Repetitive f = 50 Hz
I
G
= 50 mA, di
G
/dt = 0.1 A/µs
Non Repetitive
1.6 mm from case, 10s max.
1
8.5
8
0.35
10
50
-40
-40
A
A
A
A
2
s
A
W
W
A/µs
A/µs
ºC
ºC
ºC
1
2
0.1
+125
+150
260
Repetitive Peak Off State
Voltage
PARAMETER VOLTAGE UnitSYMBOL
V
DRM
V
RRM
B
200 V
D
400
di/dt
di/dt
MT1
MT2
MT2
G
FT01...N
SURFACE MOUNT TRIAC
Jan - 02
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER CONDITIONS SENSITIVITY Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC mA
09
10
10
200
10
1.8
1.5
0.2
µA
V
V
V
mA
mA
V/µs
V/µs
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
TYP
TYP
MIN
MIN
TYP
MAX
/I
RRM
V
TM
*
V
GT
V
GD
I
H
*
I
L
dv / dt*
t
gd
R
th(j-t)
R
th(j-a)
Gate Controlled Delay Time
Thermal Resistance
Junction-tab for DC
Thermal Resistance
Junction-Ambient
V
D
= V
DRM
, T
j
= 110 ºC
T
j
= 25 ºC
V
R
= V
RRM
,
I
T
= 1.4 Amp, tp = 380 µs, T
j
= 25 ºC
V
D
= 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
I
T
= 50 mA
, Gate open, T
j
= 25 ºC
I
G
= 1.2 I
GT
,
T
j
= 25 ºC
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 110 ºC
(di/dt)c = 0.35 A/ms, T
j
= 110 ºC
I
G
= 40 mA, di
G
/dt = 0.5 A/µs,
V
D
= V
DRM
, I
T
= 1.1 A, T
j
= 25 ºC
Quadrant
Q1÷Q3
Q4
Q1÷Q4
Q1÷Q4
Q1, Q3, Q4
Q2
Q1÷Q4
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125 ºC
(dv/dt)c*
µs
ºC/W
ºC/W
* for either polarity of electrode MT2 voltage with reference to electrode MT1.
10
25
25
10
10
20
50
2
25
25
50
100
5
2
30
60
PART NUMBER INFORMATION
10
10
20
20
1
03
3
5
02
3
3
7
7
14
10
1
05
5
5
07
5
7
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T 01 10 B N 00
FORMING
RB
PACKAGING
Jan - 02
Fig. 1: Maximum power dissipation versus
RMS on-state current
0 20
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40 60 80 100 120 140
P (W)
Fig. 2: Correlation between maximum
power dissipation and maximum allowable
temperature (Tamb and T tab).
T tab (ºC)
-90
-95
-100
-105
-110
-115
-120
-125
Rth (j-a) ºC/W
Fig. 3: RMS on-state current versus tab
temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt (Tj)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20 0 60 80 100 120 140
Igt (Tj = 25 ºC)
Ih (Tj)
Ih (Tj = 25 ºC)
4020
1 10 100 1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
8
6
4
2
0
I TSM (A)
Tj initial = 25 ºC
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
FT01...N
SURFACE MOUNT TRIAC
1.2
1.0
0.8
0.6
0.4
0.2
0
I T(RMS) (A)
0 20 40 60 80 100 120
α = 180 º
10 30 50 70 90 110 130
Igt
Ih
0.0 0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8
P (W)
Rth (j-l) ºC/W
Standard foot print, e(Cu) = 35 µm
α
180 º
α
0.9 1.0
α = 180 º
α = 120 º
α = 90 º
α = 60 º
α = 30 º
Tamb (ºC)
Tj (ºC) Number of cycles
tp (s)
T tab (ºC)
IT(RMS)(A)
Jan - 02
FT01...N
SURFACE MOUNT TRIAC
0 0.5
10
1
0.1
1 1.5 2 2.5 3 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4
1
100
10
1
0.1
10
ITSM(A). I2t (A2s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp ≤ 10 ms, and corresponding value of I2t.
Tj initial = 25 ºC
tp(ms)
I2 t
ITSM
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
A
B
C
D
E
F
G
H
I
J
K
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
Weight: 0.11 g
FOOT PRINT
6.30
6.70
3.30
-
-
2.95
0.65
1.50
0.50
-
0.25
6.50
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.60
0.02
0.30
6.70
7.30
3.70
-
-
3.15
0.85
1.70
0.70
0.05
0.35
3.3
1.5
1.5
(3x) 1 2.3
4.6
6.4
G
F
A
16º max. (4x)
H
D
EI
B
C
J
10º max.
K
4.5 5
Tj max
Vto = 1.10 V
Rt = 0.420Ω
VTM(V)
Tj max
Tj initial
25 ºC
