VS-20ETF..SPbF Series
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Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-20ETF..SPbF soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-263AB (D2PAK)
IF(AV) 20 A
VR800 V, 1000 V, 1200 V
VF at IF1.31 V
IFSM 355 A
trr 95 ns
TJ max. 150 °C
Diode variation Single die
Snap factor 0.6
Base
cathode
+
2
13
A
node --
Anode
1
2
3
TO-263AB (D2PAK)
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 20 A
VRRM 800 to 1200 V
IFSM 355 A
VF20 A, TJ = 25 °C 1.31 V
trr 1 A, 100 A/μs 95 ns
TJRange -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-20ETF08SPbF 800 900
6VS-20ETF10SPbF 1000 1100
VS-20ETF12SPbF 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 97 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 300
10 ms sine pulse, no voltage reapplied 355
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 450 A2s
10 ms sine pulse, no voltage reapplied 635
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A2s
VS-20ETF..SPbF Series
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Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 20 A, TJ = 25 °C 1.31 V
Forward slope resistance rtTJ = 150 °C 11.88 m
Threshold voltage VF(TO) 0.93 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM 0.1 mA
TJ = 150 °C 6
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr IF at 20 Apk
25 A/μs
25 °C
400 ns
Reverse recovery current Irr 6.1 A
Reverse recovery charge Qrr 1.7 μC
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.9
°C/W
Maximum thermal resistance,
junction to ambient (PCB mount) RthJA (1) 62
Soldering temperature TS260 °C
Approximate weight 2g
0.07 oz.
Marking device Case style TO-263AB (D2PAK)
20ETF08S
20ETF10S
20ETF12S
IFM trr
dir
dt
IRM(REC)
Qrr
t
tatb
VS-20ETF..SPbF Series
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
150
0
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
5
100
10 25
120
130
110
15 20
140
Conduction angle
20ETF.. Series
RthJC (DC) = 0.9 K/W
30°
60°
90°
120°
180°
Ø
150
025
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
15
530
110
35
120
100
10 20
130
140
20ETF.. Series
RthJC (DC) = 0.9 K/W
Ø
Conduction period
30°
60°
90°
120°
180° DC
10
0
35
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20
25
25
30
20
10 155
5
15
Conduction angle
20ETF.. Series
TJ = 150 °C
RMS limit
180°
120°
90°
60°
30°
Ø
10
0
45
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
25
35
15
10 255 15
5
20
35
20 30
40
30
RMS limit
Ø
Conduction period
20ETF.. Series
TJ = 150 °C
180°
120°
90°
60°
30° DC
350
50
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20ETF.. Series
300
150
50
0.01 0.1 1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
400
20ETF.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
VS-20ETF..SPbF Series
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
1000
10
1
0 1.0 2.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
100
3.0 4.0
TJ = 25 °C
TJ = 150 °C
20ETF.. Series
0.5 1.5 2.5 3.5
0.7
0.6
0
0 50 100 150 200
trr - Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.2
0.4
20ETF.. Series
TJ = 25 °C
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 30 A
IFM = 20 A
0.1
0.3
0.5
1.2
0
0 50 100 150 200
trr - Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.6
0.9
0.3
20ETF.. Series
TJ = 150 °C
IFM = 30 A
IFM = 1 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
6
0
0 50 100 150 200
Qrr - Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
3
1
2
4
5
20ETF.. Series
TJ = 25 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
0 50 100 150 200
Qrr - Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
2
4
20ETF.. Series
TJ = 150 °C
6
8
10
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
VS-20ETF..SPbF Series
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Revision: 11-Feb-16 5Document Number: 94099
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Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Fig. 14 - Thermal Impedance ZthJC Characteristics
25
0
0 50 100 150 200
Irr - Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
5
15
10
20
20ETF.. Series
TJ = 25 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
35
20
0
0 50 100 150 200
Irr - Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
5
10
30
20ETF.. Series
TJ = 150 °C
15
25
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.01
1
10.0001 0.001 0.01 0.1
Square Wave Pulse Duration (s)
ZthJC - Transient Thermal Impedance (K/W)
0.1
Single pulse
20ETF.. Series
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-20ETF..SPbF Series
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Revision: 11-Feb-16 6Document Number: 94099
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ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20ETF08SPbF 50 1000 Antistatic plastic tubes
VS-20ETF08STRRPbF 800 800 13" diameter reel
VS-20ETF08STRLPbF 800 800 13" diameter reel
VS-20ETF10SPbF 50 1000 Antistatic plastic tubes
VS-20ETF10STRRPbF 800 800 13" diameter reel
VS-20ETF10STRLPbF 800 800 13" diameter reel
VS-20ETF12SPbF 50 1000 Antistatic plastic tubes
VS-20ETF12STRRPbF 800 800 13" diameter reel
VS-20ETF12STRLPbF 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
2- Current rating (20 = 20 A)
1- Vishay Semiconductors product
3- Circuit configuration:
E = single diode
4- Package:
T = TO-263AB (D2PAK)
5- Type of silicon:
F = fast soft recovery rectifier
6- Voltage code x 100 = VRRM
7- S = surface mountable
8- None = tape
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9- None = standard production
PbF = lead (Pb)-free
08 = 800 V
10 = 1000 V
12 = 1200 V
Device code
51 32 4 6 7 8 9
20VS- E T F 12 S TRL PbF
Outline Dimensions
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D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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