1N4448/A52A - NXP - Datasheet.Directory

DATA SH EET

Product speciﬁcation

Supersedes data of 2002 Jan 23 2004 Aug 10

DISCRETE SEMICONDUCTORS

1N4148; 1N4448

High-speed diodes

M3D176

2004 Aug 10 2

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4148; 1N4448

FEATURES

•Hermetically sealed leaded glass SOD27 (DO-35)

package

•High switching speed: max. 4 ns

•General application

•Continuous reverse voltage: max. 100 V

•Repetitive peak reverse voltage: max. 100 V

•Repetitive peak forward current: max. 450 mA.

APPLICATIONS

•High-speed switching.

DESCRIPTION

The1N4148and1N4448arehigh-speedswitchingdiodes

fabricated in planar technology, and encapsulated in

hermetically sealed leaded glass SOD27 (DO-35)

packages.

MARKING

TYPE NUMBER MARKING CODE

1N4148 1N4148PH or 4148PH

1N4448 1N4448

Fig.1 Simplified outline (SOD27; DO-35) and

symbol.

The diodes are type branded.

handbook, halfpage

MAM246

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

1N4148 −hermetically sealed glass package; axial leaded; 2 leads SOD27

1N4448

2004 Aug 10 3

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4148; 1N4448

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRRM repetitive peak reverse voltage −100 V

VRcontinuous reverse voltage −100 V

IFcontinuous forward current see Fig.2; note 1 −200 mA

IFRM repetitive peak forward current −450 mA

IFSM non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs−4A

t=1ms −1A

t=1s −0.5 A

Ptot total power dissipation Tamb =25°C; note 1 −500 mW

Tstg storage temperature −65 +200 °C

Tjjunction temperature −200 °C

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VFforward voltage see Fig.3

1N4148 IF=10mA −1V

1N4448 IF= 5 mA 0.62 0.72 V

IF= 100 mA −1V

IRreverse current VR= 20 V; see Fig.5 25 nA

VR= 20 V; Tj= 150 °C; see Fig.5 −50 µA

IRreverse current; 1N4448 VR= 20 V; Tj= 100 °C; see Fig.5 −3µA

Cddiode capacitance f = 1 MHz; VR= 0 V; see Fig.6 −4pF

trr reverse recovery time when switched from IF=10mAto

IR= 60 mA; RL= 100 Ω;

measured at IR= 1 mA; see Fig.7

−4ns

Vfr forward recovery voltage when switched from IF= 50 mA;

tr=20 ns; see Fig.8 −2.5 V

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board without metallization pad.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W

Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W

2004 Aug 10 4

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4148; 1N4448

GRAPHICAL DATA

0 100 200

300

200

100

mbg451

Tamb (°C)

(mA)

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.3 Forward current as a function of forward

voltage.

handbook, halfpage

012

600

200

400

MBG464

VF (V)

(mA)

(1) (2) (3)

(1) Tj= 175 °C; typical values.

(2) Tj=25°C; typical values.

(3) Tj=25°C; maximum values.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents.

Tj=25°C prior to surge.

handbook, full pagewidth

MBG704

10 tp (µs)

IFSM

(A)

102

10−1104

102103

2004 Aug 10 5

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4148; 1N4448

0 100 Tj (°C) 200

103

102

10−1

10−2

10 (1)

(µA)

mgd290

(2)

Fig.5 Reverse current as a function of junction

temperature.

(1) VR= 75 V; typical values.

(2) VR= 20 V; typical values.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj=25°C.

handbook, halfpage

01020

1.2

1.0

0.6

0.4

0.8

MGD004

VR (V)

(pF)

2004 Aug 10 6

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4148; 1N4448

Fig.7 Reverse recovery voltage test circuit and waveforms.

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

(1) IR= 1 mA.

Fig.8 Forward recovery voltage test circuit and waveforms.

trt

10%

90%

input

signal

R = 50

SΩ

R = 50

iΩ

OSCILLOSCOPE

Ω1 k Ω450

D.U.T.

MGA882

Vfr

output

signal

2004 Aug 10 7

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4148; 1N4448

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

Note

1. The marking band indicates the cathode.

SOD27 DO-35A24 SC-40 97-06-09

Hermetically sealed glass package; axial leaded; 2 leads SOD27

UNIT b

max.

mm 0.56

max. G1

max.

25.44.251.85

min.

DIMENSIONS (mm are the original dimensions)

LD L

(1)

0 1 2 mm

scale

2004 Aug 10 8

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4148; 1N4448

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratany otherconditionsabove thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationor warrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

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Printed in The Netherlands R76/05/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13541