2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 to -3 -40 7.5 -3 10 2N5566 -0.5 to -3 -40 7.5 -3 20 FEATURES BENEFITS APPLICATIONS D D D D D D D D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signals D Maximum High Frequency Performance D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters D Matched Switches Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 3 pA Low Noise: 12 nVHz @ 10 Hz Good CMRR: 76 dB Minimum Parasitics DESCRIPTION The 2N5564/5565/5566 are matched pairs of JFETs mounted in a TO-71 package. This two-chip design reduces parasitics for good performance at high frequency while ensuring extremely tight matching. This series features high breakdown voltage (V(BR)DSS typically > 55 V), high gain (typically > 9 mS), and <5 mV offset between the two die. The hermetically-sealed TO-71 package is available with full military processing (see Military Information). For similar products see the low-noise U/SST401 series, and the low-leakage 2N5196/5197/5198/5199 data sheets. TO-71 S1 G2 1 D1 6 2 D2 5 3 4 G1 S2 Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V Power Dissipation : Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Document Number: 70254 S-04031--Rev. D, 04-Jun-01 Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 325 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW Notes a. Derate 2.6 mW/_C above 25_C b. Derate 5.2 mW/_C above 25_C www.vishay.com 8-1 2N5564/5565/5566 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5564 2N5565 2N5566 Symbol Test Conditions Typa V(BR)GSS IG = -1 mA, VDS = 0 V -55 -40 VGS(off) VDS = 15 V, ID = 1 nA -2 -0.5 -3 -0.5 -3 -0.5 -3 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 20 5 30 5 30 5 30 mA -100 -100 -100 pA IGSS VGS = -20 V, VDS = 0 V -5 Gate Reverse Current -10 -200 -200 -200 nA Parameter Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Currentc Drain-Source On-Resistance Gate-Source Voltagec Gate-Source Forward Voltage -40 -40 V IG TA = 150_C VDG = 15 V, ID = 2 mA TA = 125_C -3 pA -1 nA rDS(on) VGS = 0 V, ID = 1 mA 50 VGS VDG = 15 V, ID = 2 mA -1.2 VGS(F) IG = 2 mA , VDS = 0 V 0.7 100 100 100 1 1 1 W V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en Noise Figure NF 9 VDS = 15 V, ID = 2 mA f = 1 kHz VDS = 15 V, ID = 2 mA f = 100 MHz VDS = 15 V, ID = 2 mA f = 1 MHz VDS = 15 V, ID = 2 mA f = 10 Hz 7.5 35 8.5 12.5 7.5 45 7 12.5 7.5 45 7 12.5 mS 45 mS 7 mS 10 12 12 12 2.5 3 3 3 12 50 50 50 nV Hz 1 1 1 dB pF RG = 10 MW Matching Differential Gate-Source Voltage |V GS1-V GS2| VDG = 15 V, ID = 2 mA 5 10 20 mV Gate-Source Voltage Differential Change with Temperature D|V GS1-V GS2| VDG = 15 V, ID = 2 mA TA = -55 to 125_C 10 25 50 mV/ _C Saturation Drain Current Ratioc DT I DSS1 I DSS2 Transconductance Ratio gfs1 gfs2 Common Mode Rejection Ratioc CMRR VDS = 15 V, VGS = 0 V 0.98 0.95 1 0.95 1 0.95 1 VDS = 15 V, ID = 2 mA f = 1 kHz 0.98 0.95 1 0.90 1 0.90 1 VDG = 10 to 20 V ID = 2 mA 76 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. www.vishay.com 8-2 dB NCBD Document Number: 70254 S-04031--Rev. D, 04-Jun-01 2N5564/5565/5566 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 80 160 IDSS rDS 60 120 40 80 20 40 0 r DS(on) - Drain-Source On-Resistance ( W ) rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 15 V, VGS = 0 -4 -6 -8 TA = 25_C 80 VGS(off) = -2 V 60 40 20 0 0 -2 0 On-Resistance vs. Drain Current 100 200 I DSS - Saturation Drain Current (mA) r DS(on) - Drain-Source On-Resistance ( W ) 100 -10 1 10 VGS(off) - Gate-Source Cutoff Voltage (V) ID - Drain Current (mA) Turn-On Switching On-Resistance vs. Temperature 5 tr approximately independent of ID VDG = 5 V, RG = 50 W VGS(L) = -10 V ID = 1 mA rDS changes 0.7%/_C 160 4 Switching Time (ns) r DS(on) - Drain-Source On-Resistance ( W ) 200 120 VGS(off) = -2 V 80 40 tr 3 td(on) @ ID = 12 mA 2 1 td(on) @ ID = 3 mA 0 0 -55 -35 -15 25 5 45 65 85 105 0 125 -2 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 50 200 20 200 10 100 0 0 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) Document Number: 70254 S-04031--Rev. D, 04-Jun-01 -10 24 tf Switching Time (ns) gos g os- Output Conductance ( mS) 400 -2 -10 td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = -10 V 40 0 -8 Turn-Off Switching gfs and gos @ VDS = 15 V VGS = 0 V, f = 1 kHz 30 -6 30 500 gfs -4 VGS(off) - Gate-Source Cutoff Voltage (V) TA - Temperature (_C) g fs - Forward Transconductance (mS) 100 18 VGS(off) = -2 V 12 td(off) 6 0 0 2 4 6 8 10 ID - Drain Current (mA) www.vishay.com 8-3 2N5564/5565/5566 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics VGS(off) = -1.5 V Transfer Characteristics 40 14 VGS(off) = -2 V VGS = 0 V 12 VDS = 15 V 32 10 I D - Drain Current (mA) I D - Drain Current (mA) -0.1 V -0.2 V 8 -0.3 V 6 -0.4 V 4 -0.5 V -0.6 V 24 TA = -55_C 25_C 16 8 125_C 2 -0.7 V 0 0 0 4 8 12 16 20 0 VDS - Drain-Source Voltage (V) VGS = 0 V f = 1 MHz VDS = 0 V -0.2 V 4 24 -0.3 V -0.4 V Capacitance (pF) I D - Drain Current (mA) 30 VGS(off) = -1.5 V -0.1 V -2 Capacitance vs. Gate-Source Voltage Output Characteristics 5 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) 3 -0.5 V -0.6 V 2 18 12 -0.7 V 1 Ciss 6 -0.8 V Crss -0.9 V 0 0 0.2 0.4 0.6 0.8 0 1 0 -16 -20 1 mA gig big 10 100 pA 1 mA 10 pA 10 mA (mS) I G - Gate Leakage VDG = 15 V ID = 10 mA TA = 25_C ID = 10 mA TA = 125_C -12 100 IGSS @ 25_C 1 nA -8 Common-Gate Input Admittance Gate Leakage Current 10 nA -4 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) IGSS @ 25_C 1 TA = 25_C 1 pA IG(on) @ ID 0.1 pA 0.1 0 6 12 18 VDG - Drain-Gate Voltage (V) www.vishay.com 8-4 24 30 100 200 500 1000 f - Frequency (MHz) Document Number: 70254 S-04031--Rev. D, 04-Jun-01 2N5564/5565/5566 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Gate Forward Admittance Common-Gate Reverse Admittance 100 10 VDG = 15 V ID = 10 mA TA = 25_C VDG = 15 V ID = 10 mA TA = 25_C -gfg bfg -brg 1 10 (mS) (mS) gfg +grg -grg 0.1 1 0.01 0.1 100 200 500 1000 100 200 f - Frequency (MHz) 1000 f - Frequency (MHz) Common-Gate Output Admittance Noise Voltage vs. Frequency 100 100 VDG = 15 V ID = 10 mA TA = 25_C Hz VDS = 15 V en - Noise Voltage nV / bog (mS) 10 gog 1 0.1 10 ID = 1 mA ID = 10 mA 1 100 200 500 1000 10 100 1k f - Frequency (MHz) 10 k 100 k f - Frequency (Hz) Output Conductance vs. Drain Current Transconductance vs. Drain Current 1000 100 VDS = 15 V f = 1 kHz VGS(off) = -2 V gfs - Forward Transconductance (mS) VGS(off) = -2 V gos - Output Conductance (S) 500 TA = -55_C 100 25_C 125_C 10 VDS = 15 V f = 1 kHz TA = -55_C 25_C 10 125_C 1 0.1 1.0 ID - Drain Current (mA) Document Number: 70254 S-04031--Rev. D, 04-Jun-01 10 0.1 1.0 10 ID - Drain Current (mA) www.vishay.com 8-5