03/23/10
www.irf.com 1
AUIRF1010EZ
AUIRF1010EZS
AUIRF1010EZL
HEXFET® Power MOSFET
AUTOMOTIVE GRADE PD - 95962
V
(BR)DSS
60V
R
DS(on)
max. 8.5mΩ
I
D (Silicon Limited)
84A
I
D (Package Limited)
75A
S
D
G
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
D2Pak
AUIRF1010EZS
TO-220AB
AUIRF1010EZ
TO-262
AUIRF1010EZL
GDS
Gate Drain Source
OAdvanced Process Technology
OUltra Low On-Resistance
O175°C Operating Temperature
OFast Switching
ORepetitive Avalanche Allowed up to Tjmax
OLead-Free, RoHS Compliant
OAutomotive Qualified *
Features
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other appli-
cations.
Description
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@
T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
E
AS
(tested) Single Pulse Avalanche Energy Tested Value
i
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
h
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
k
––– 1.11
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
j
––– 40
A
mJ
°C
°C/W
Max.
84
60
340
75
10 lbf•in (1.1N•m)
140
0.90
± 20
99
180
See Fig.12a,12b,15,16
300
-55 to + 175
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
G
S
D
G
D
S
D
G
D
D
S
D
AUIRF1010EZ/S/L
2www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.077mH,
RG = 25Ω, IAS = 51A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from
0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.077mH, RG = 25Ω,
IAS = 51A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
S
D
G
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e60–––––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Volta
g
e Temp. Coefficien
t
––– 0.058 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistanc
e
––– 6.8 8.5 mΩ
V
GS(th)
Gate Threshold Volta
e2.0–––4.0V
g
fs Forward Transconductance 200 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
Q
g
Total Gate Char
g
e ––– 58 86 nC
Q
gs
Gate-to-Source Char
g
e ––– 19 28
Q
gd
Gate-to-Drain ("Miller") Char
g
e ––– 21 32
t
d(on)
Turn-On Dela
y
Time ––– 19 ––– ns
t
r
Rise Time ––– 90 –––
t
d(off)
Turn-Off Dela
y
Time ––– 38 –––
t
f
Fall Time ––– 54 –––
L
D
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 2810 ––– pF
C
oss
Output Capacitance ––– 420 –––
C
rss
Reverse Transfer Capacitance ––– 200 –––
C
oss
Output Capacitance ––– 1440 –––
C
oss
Output Capacitance ––– 320 –––
C
oss
e
ff
.Effective Output Capacitance ––– 510 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current ––– ––– 84
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 340
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 41 62 ns
Q
rr
Reverse Recover
y
Char
g
e ––– 54 81 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 10V
f
MOSFET s
y
mbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 48V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 48V
ƒ
= 1.0MHz, See Fi
g
. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
T
J
= 25°C, I
F
= 51A, V
DD
= 30V
di/dt = 100A/
µ
s
f
T
J
= 25°C, I
S
= 51A, V
GS
= 0V
f
showing the
inte
g
ral reverse
p-n junction diode.
R
G
= 7.95Ω
I
D
= 51A
V
DS
= 25V, I
D
= 51A
V
DD
= 30V
I
D
= 51A
V
GS
= 20V
V
GS
= -20V
V
DS
= 48V
V
GS
= 10V
f
Conditions
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V,
T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250
µ
A
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 51A
f
AUIRF1010EZ/S/L
www.irf.com 3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
Moisture Sensitivity Level TO-220AB N/A
Charged Device Model Class C3
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
RoHS Compliant Yes
ESD
Machine Model Class M4
AEC-Q101-002
Human Body Model Class H1C
AEC-Q101-001
AUIRF1010EZ/S/L
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.01 0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
45678910
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
Tj = 25°C
4.5V
0 20 40 60 80 100 120 140
ID,Drain-to-Source Current (A)
0
10
20
30
40
50
60
70
80
90
100
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
AUIRF1010EZ/S/L
www.irf.com 5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 102030405060
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 51A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
ance
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 84A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.415 0.000246
0.410 0.000898
0.285 0.009546
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
ID, Drain Current (A)
Limited By Package
AUIRF1010EZ/S/L
www.irf.com 7
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.7A
9.1A
BOTTOM 51A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 250µA
AUIRF1010EZ/S/L
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Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
25
50
75
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 51A
AUIRF1010EZ/S/L
www.irf.com 9
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRF1010EZ/S/L
10 www.irf.com
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUF1010EZ
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF1010EZ/S/L
www.irf.com 11
D2Pak Part Marking Information
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUF1010EZS
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF1010EZ/S/L
12 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUF1010EZL
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF1010EZ/S/L
www.irf.com 13
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRF1010EZ/S/L
14 www.irf.com
Ordering Information
Base
p
art Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRF1010EZ TO-220 Tube 50 AUIRF1010EZ
AUIRF1010EZL TO-262 Tube 50 AUIRF1010EZL
AUIRF1010EZS D2Pak Tube 50 AUIRF1010EZS
Tape and Reel Left 800 AUIRF1010EZSTRL
Tape and Reel Right 800 AUIRF1010EZSTRR
AUIRF1010EZ/S/L
www.irf.com 15
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to
product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
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