74VHC74MTC_NL - FAIRCHILD SEMICONDUCTOR

April, 2006 − Rev. 5 1Publication Order Number:

1N5913B/D

1N5913B Series

3 W DO−41 Surmetict 30

Zener Voltage Regulators

This is a complete series of 3 W Zener diodes with limits and

excellent operating characteristics that reflect the superior capabilities

of silicon−oxide passivated junctions. All this in an axial−lead,

transfer−molded plastic package that offers protection in all common

environmental conditions.

Features

•Zener Voltage Range − 3.3 V to 200 V

•ESD Rating of Class 3 (>16 KV) per Human Body Model

•Surge Rating of 98 W @ 1 ms

•Maximum Limits Guaranteed on up to Six Electrical Parameters

•Package No Larger than the Conventional 1 W Package

•Pb−Free Packages are Available

Mechanical Characteristics

CASE: Void free, transfer−molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

260°C, 1/16″ from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

MAXIMUM RATINGS

Rating Symbol Value Unit

Max. Steady State Power Dissipation

@ TL = 75°C, Lead Length = 3/8″

Derate above 75°C

PD3

mW/°C

Steady State Power Dissipation

@ TA = 50°C

Derate above 50°C

PD1

6.67

mW/°C

Operating and Storage

Temperature Range TJ, Tstg −65 to

+200 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

1N59xxB, G Axial Lead

(Pb−Free) 2000 Units/Box

1N59xxBRL, G Axial Lead

(Pb−Free)

AXIAL LEAD

CASE 59

PLASTIC

STYLE 1

6000/Tape & Ree

Cathode Anode

MARKING DIAGRAM

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specificatio

Brochure, BRD8011/D.

http://onsemi.com

A = Assembly Location

1N59xxB = Device Number

YY = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

59xxB

YYWWG

Zener Voltage Regulator

IZT

VZVF

1N5913B Series

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ELECTRICAL CHARACTERISTICS

(TL = 30°C unless otherwise noted,

VF = 1.5 V Max @ IF = 200 mAdc for all types)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IZK Reverse Current

ZZK Maximum Zener Impedance @ IZK

IRReverse Leakage Current @ VR

VRBreakdown Voltage

IFForward Current

VFForward Voltage @ IF

IZM Maximum DC Zener Current

1N5913B Series

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ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)

Device†

(Note 1) Device

Marking

Zener Voltage (Note 2) Zener Impedance (Note 3) Leakage Current

IZM

VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR

Min Nom Max mA W W mA mA Max Volts mA

1N5913B, G 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454

1N5917B, G 1N5917B 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319

1N5919B, G 1N5919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267

1N5920B, G 1N5920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241

1N5921B, G 1N5921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220

1N5923B, G 1N5923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182

1N5924B, G 1N5924B 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164

1N5925B, G 1N5925B 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150

1N5926B, G 1N5926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136

1N5927B, G 1N5927B 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125

1N5929B, G 1N5929B 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100

1N5930B, G 1N5930B 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93

1N5931B, G 1N5931B 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83

1N5932B, G 1N5932B 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75

1N5933B, G 1N5933B 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68

1N5934B, G 1N5934B 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62

1N5935B, G 1N5935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55

1N5936B, G 1N5936B 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50

1N5937B, G 1N5937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45

1N5938B, G 1N5938B 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41

1N5940B, G 1N5940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34

1N5941B, G 1N5941B 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31

1N5942B, G 1N5942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29

1N5943B, G 1N5943B 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26

1N5944B, G 1N5944B 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24

1N5946B, G 1N5946B 71.25 75 78.75 5.0 140 2000 0.25 1 56 20

1N5947B, G 1N5947B 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18

1N5948B, G 1N5948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16

1N5950B, G 1N5950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13

1N5951B, G 1N5951B 114 120 126 3.1 380 4500 0.25 1 91.2 12

1N5952B, G 1N5952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11

1N5953B, G 1N5953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10

1N5954B, G 1N5954B 152 160 168 2.3 700 6500 0.25 1 121.6 9

1N5955B, G 1N5955B 171 180 189 2.1 900 7000 0.25 1 136.8 8

1N5956B, G 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

† The “G’’ suffix indicates Pb−Free package available.

1. TOLERANCE AND TYPE NUMBER DESIGNATION

Tolerance designation − device tolerance of ±5% are indicated by a “B” suffix.

2. ZENER VOLTAGE (VZ) MEASUREMENT

ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C,

3/8″ from the diode body.

3. ZENER IMPEDANCE (ZZ) DERIVATION

The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the

DC zener current (IZT or IZK) is superimposed on IZT or IZK.

1N5913B Series

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Figure 1. Power Temperature Derating Curve

TL, LEAD TEMPERATURE (°C)

0 20 40 60 20080 100 120 140 160 180

L = 1/8″

L = 3/8″

L = 1″

L = LEAD LENGTH

TO HEAT SINK

PD, STEADY STATE DISSIPATION (WATTS)

t, TIME (SECONDS)

0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

0.3

0.5

0.7

D =0.5

0.2

0.1

0.05

0.01

D = 0

DUTY CYCLE, D =t1/t2

θJL(t, D) TRANSIENT THERMAL RESISTANCE

JUNCTION-TO-LEAD ( C/W)°

PPK t1

NOTE: BELOW 0.1 SECOND, THERMAL

RESPONSE CURVE IS APPLICABLE

TO ANY LEAD LENGTH (L).

SINGLE PULSE DTJL = qJL (t)PPK

REPETITIVE PULSES DTJL = qJL (t,D)PPK

0.02

100

200

300

500

0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100

PW, PULSE WIDTH (ms)

P , PEAK SURGE POWER (WATTS)

1 2 5 10 20 50 100 200 400 1000

0.0003

0.0005

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

TA = 125°C

NOMINAL VZ (VOLTS)

AS SPECIFIED IN ELEC. CHAR. TABLE

Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch

Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage

IR, REVERSE LEAKAGE (μAdc) @ VR

RECTANGULAR

NONREPETITIVE

WAVEFORM

TJ=25°C PRIOR

TO INITIAL PULSE

1N5913B Series

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APPLICATION NOTE

Since the actual voltage available from a given zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

Lead Temperature, TL, should be determined from:

TL = qLA PD + TA

qLA is the lead-to-ambient thermal resistance (°C/W) and

PD is the power dissipation. The value for qLA will vary and

depends on the device mounting method. qLA is generally

30−40°C/W for the various clips and tie points in common

use and for printed circuit board wiring.

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

Using the measured value of TL, the junction temperature

may be determined by:

TJ = TL + DTJL

DTJL is the increase in junction temperature above the lead

temperature and may be found from Figure 2 for a train of

power pulses (L = 3/8 inch) or from Figure 10 for dc power.

DTJL = qJL PD

For worst-case design, using expected limits of IZ, limits

of PD and the extremes of TJ (DTJ) may be estimated.

Changes in voltage, VZ, can then be found from:

DV = qVZ DTJ

qVZ, the zener voltage temperature coefficient, is found

from Figures 5 and 6.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Data of Figure 2 should not be used to compute surge

capability. Sur ge limitations are given in Figure 3. They are

lower than would be expected by considering only junction

temperature, as current crowding ef fects cause temperatures

to be extremely high in small spots resulting in device

degradation should the limits of Figure 3 be exceeded.

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Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts

Figure 7. VZ = 3.3 thru 10 Volts Figure 8. VZ = 12 thru 82 Volts

Figure 9. VZ = 100 thru 400 Volts Figure 10. Typical Thermal Resistance

ZENER VOLTAGE versus ZENER CURRENT

(Figures 7, 8 and 9)

TEMPERATURE COEFFICIENT RANGES

(90% of the Units are in the Ranges Indicated)

VZ, ZENER VOLTAGE @ IZT (VOLTS)

34 5 6 789101112

−2

−4

RANGE

, TEMPERATURE COEFFICIENT (mV/ C) @ IZTVZ °θ

1000

500

200

100

10 10 20 50 100 200 400 1000

VZ, ZENER VOLTAGE @ IZT (VOLTS)

, TEMPERATURE COEFFICIENT (mV/ C) @ I

ZTVZ °θ

01 2 3 4 5 6 7 8910

100

0.5

0.3

0.2

0.1

VZ, ZENER VOLTAGE (VOLTS)

I , ZENER CURRENT (mA)

0 10 203040 50 607080 90100

VZ, ZENER VOLTAGE (VOLTS)

I , ZENER CURRENT (mA)

100

0.5

0.3

0.2

0.1

100 200 300 400250 350150

0.5

0.2

0.1

VZ, ZENER VOLTAGE (VOLTS)

I , ZENER CURRENT (mA)

L, LEAD LENGTH TO HEAT SINK (INCH)

PRIMARY PATH OF

CONDUCTION IS THROUGH

THE CATHODE LEAD

0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1

, JUNCTION-TO-LEAD THERMAL RESISTANCE

( C/W)°

1N5913B Series

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PACKAGE DIMENSIONS

AXIAL LEAD

CASE 59−10

ISSUE U

ADIM MIN MAX MIN MAX

MILLIMETERSINCHES

A4.10 5.200.161 0.205

B2.00 2.700.079 0.106

D0.71 0.860.028 0.034

F−−− 1.27−−− 0.050

K25.40 −−−1.000 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

JEDEC DO−41 OUTLINE SHALL APPLY

4. POLARITY DENOTED BY CATHODE BAND.

5. LEAD DIAMETER NOT CONTROLLED WITHIN F

DIMENSION.

POLARITY INDICATOR

OPTIONAL AS NEEDED

(SEE STYLES)

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

1N5913B Series

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1N5913B/D

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