BU326A
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
■SGS -THO MS ON PRE F ERRE D SALES T YP E
■NPN TRANSISTOR
■FAST SWITCHING SPEED
APPLICATIONS:
■POW ER SUP PLI ES
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
Th e BU326A is a silicon multiepit axial mesa NPN
transistor in Jedec TO-3 metal case particularly
intended for switch-mode CTV sup ply system.
INTERNAL SCHEMATI C DI AG RAM
June 1997
12
TO-3
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 900 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage (IC = 0) 10 V
ICCollector Current 6 A
ICM Collector Peak C urrent 8 A
IBBase Current 3 A
Ptot Total Power Dissipation at Tcase ≤ 25 oC75W
T
stg Storage Temperature -65 to 200 oC
TjMax. Operating Junction Temperature 200 oC
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.33 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off Current
(VBE = 0) VCE = 900 V
VCE = 900 V Tc = 125 oC1
2mA
mA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 10 V 10 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage(IB = 0) IC = 100 mA 400 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 2.5 A IB = 0.5 A
IC = 4 A IB = 1.25 A 1.5
3V
V
VBE(sat)∗Base-Emitter Saturation
Voltage IC = 2.5 A IB = 0.5 A
IC = 4 A IB = 1.25 A 1.4
1.6 V
hFE∗DC Current Gain IC = 1 A VCE = 5 V 25
ton Turn-on Time IC = 2.5 A IB1 = 0.5 A
VCC = 250 V 0.5 µs
tsStorage Time IC = 2.5 A IB1 = 0.5 A
IB2 = -1A A VCC = 250 V 3.5 µs
tfFall Time IC = 2.5 A IB1 = 0.5 A
IB2 = -1A A VCC = 250 V 0.5 µs
∗ P ulsed: P ulse durat ion = 300 µs, d uty cy cle 1.5 %
BU326A
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
BU326A
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
conse quences of us e of such information nor for any infringement of patent s or othe r rights of third part ies whic h may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro el ec tronics. Specifi cations mentioned
in this publicat ion are subject to change wi thout noti ce. This publicat ion sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
writt en approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - A ll Rights Reserv ed
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
Australia - Braz il - Canada - China - France - G ermany - Hong Kong - I taly - Japan - Korea - Malaysia - Malta - Moroc co - The Netherlands -
Singapore - Spain - S weden - Switz e rl and - Taiwan - Thailand - Unit ed Kingdom - U. S.A
. . .
BU326A
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