T4-LDS-0223, Rev. 1 (120178) ©2011 Microsemi Corporation Page 1 of 5
2N2857
Available on
commercial
versions
RF and MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Qualified per MIL-PRF-19500/343
Quali f i ed Levels:
JAN, JAN TX,
and JANTXV
DESCRIPTION
The 2N2857 is a military qualified silicon NPN transis tor (also available in commercial version),
designed for UHF equipment and oth er high-reliability applications . Common applications
incl ude low noi se amplifier; osc i llator, and mi xer applic ations. Microsemi also offers numerous
ot her produ cts t o m eet higher an d lower po wer vo ltage regu lation app lications.
TO-72 Package
Also available in:
UB Pa ckag e
(s urf ace mount )
2N2857UB
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• JEDEC registered 2N2857.
• Silicon NPN, TO-72 packaged UHF transistor.
• Maximum unilateral gain = 13 dB (typ) @ 500 MHz.
• JAN, JANTX, and JANTXV military qualified versions available per MIL-PRF-19500/343.
• RoHS compliant version available (commercial grade only).
APPLICAT IONS / BENE FITS
• Low-power, ultra-high frequency transistor.
• Leaded metal TO -72 pac kage.
MAXIMUM RAT IN GS @ T
A
= +25 oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Collector-Emitter Voltage
VCEO
15
V
Collector-Base Voltage
VCBO
30
V
Emitter-Base Voltage
VEBO
3
V
Thermal Resistance Junction-to-Ambient
RӨJA
400
oC/W
Steady-State Power Dissipation (1)
PD
200
mW
Collector Current
IC
40
mA
Notes: 1. Derate linearly 1.14 mW/°C for TA > +25 °C.
T4-LDS-0223, Rev. 1 (120178) ©2011 Microsemi Corporation Page 2 of 5
2N2857
• CASE: Ni plated kovar, Ni cap.
• TERMINALS: Au over Ni plated kovar leads , solder dipped.
• MARKING: Manufacturer’s ID, date code, part number.
• POLARITY: See case outline on last page.
• WEIGHT: 0.322 grams.
• See Package Dimensions on last page.
JAN 2N2857 (e3)
Reliability Level
JAN=JAN level
JANTX=JAN lev el
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
IC
Collector current (dc).
IB
Base cur rent ( dc).
TA
Ambient or free air temperature.
TC
Case temperature.
VCB
Collector to base voltage (dc).
VEB
Emitter to base voltage (dc).
T4-LDS-0223, Rev. 1 (120178) ©2011 Microsemi Corporation Page 3 of 5
2N2857
TC
OFF CHARACTERISTICS
Test Conditions Symbol
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 3.0 mA, B ias condit ion D) V(BR)CEO
15
-
-
V
Collector to Em itte r Cutoff Current
(VCE = 16 V, Bias condition C) ICES
-
-
100
nA
Emitter to Base Cutoff Current
(VEB = 3 V, Bias condition D) IEBO
-
-
10
µA
Collector to Base Cutoff Current
(VCB = 15 V, Bias condition D) ICBO
-
-
10
nA
ON CHARACTERISTICS
Test Conditions Symbol
Value
Min.
Typ.
Max.
Unit
Forward Current transfer ratio
(IC = 3.0 mA, VCE = 1.0 V) hFE 30 - 150
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA) VCE(sat) - 0.4 V
Base-Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA) VBE(sat) - 1.0 V
DYNAMIC CHARACTERISTICS
Test Conditions
Symbol
Value
Unit
Min.
Typ.
Max.
Magnitude of comm on emitter small si gnal short
circuit forward current transfer ratio
(VCE = 6 V, Ic = 5 mA, f = 100 MHz) |hfe| 10 - 21
Collector-base time constant
(IE = 2.0 mA, VCB = 6.0 V, f = 31.9 MHz) rb’Cc 4 - 15 pF
Collec tor to Base – feedback capacitance
(IE = 0 mA, VCB = 10 V, 100 kHz < f < 1 MHz) Ccb 1.0
pF
Noise Figure (50 Ohms)
(IC = 1.5 mA, VCE = 6 V, f = 450 MHz, Rg = 50 Ω) F
4.5
dB
Small Signal Power Gain (common emitter)
(IE = 1.5 mA, VCE = 6 V, f = 450 MHz Gpe 12.5 21
dB
T4-LDS-0223, Rev. 1 (120178) ©2011 Microsemi Corporation Page 4 of 5
2N2857
Time (sec)
FIGURE 1
Max imum Thermal I mpedan ce
Theta (oCW)
T4-LDS-0223, Rev. 1 (120178) ©2011 Microsemi Corporation Page 5 of 5
2N2857
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shal l be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional withi n zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seati ng plan e shall be within .007 in ch
(0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by the gauge and gauging procedure shown in figure 2.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in
L1 and beyond LL minimum.
8. All four leads.
9. Dimension r (radius) applies to both inside corners of tab.
10. In accordance with ASME Y14.5M, diam eters are equivalent to Φx symbology.
11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
Dimensions
Notes
Ltr
Inch
Millimeters
Min
Max
Min
Max
TL
.028
.048
.071
1.22
TH
.036
.046
.091
1.17
HD
.209
.230
5.31
5.84
5
CD
.178
.195
4.52
4.95
5
LD
.016
.021
.410
.533
7, 8
LC
.100 TP
2.54 TP
7, 8
CH
.170
.210
4.32
5.33
LL
.500
.750
12.70
19.05
7, 8
P
.100
2.54
Q
.040
1.02
5
1
Emitter
2
Base
3
Collector
4
Case