Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC3392 High-Speed Switching Applications Package Dimensions * Adoption of FBET process. * High breakdown voltage : VCEO=(-)50V. * Large current capacitiy and high fT. * Ultrasmall-sized package permitting sets to be smallsized, slim. unit:mm 2018B [2SA1338/2SC3392] 0.4 0.16 0 to 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 3 0.5 Features ( ) : 2SA1338 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)60 V Collector-to-Emitter Voltage VCEO (-)50 V Emitter-to-Base Voltage VEBO IC (-)5 (-)500 Collector Current (Pulse) ICP (-)800 mA Collector Dissipation 200 mW Junction Temperature PC Tj 150 C Storage Temperature Tstg -55 to +150 C Collector Current V mA Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)40V, IE=0 (-)0.1 A Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)0.1 A DC Current Gain hFE VCE=(-)5V, IC=(-)10mA * : The 2SA1338/2SC3392 are classified by 10mA hFE as follows : Rank 4 5 6 7 hFE 100 to 200 140 to 280 200 to 400 280 to 560 100* 560* Continued on next page. Note : 2SA1338 Marking : AL, 2SC3392 Marking : AY hFE rank : 4, 5, 6, 7 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 83002TN (KT)/71598HA (KT)/3197KI/1114KI, MT No.1421-1/5 2SA1338/2SC3392 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Common Base Output Capacitance IC=(-)100mA, IB=(-)10mA VBE(sat) IC=(-)100mA, IB=(-)10mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)100A, RBE= Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton Storage Time tstg Fall Time typ VCB=(-)10V, f=1MHz VCE(sat) Base-to-Emitter Saturation Voltage min VCE=(-)10V, IC=(-)50mA Cob Collector-to-Emitter Saturation Voltage Ratings Conditions Unit max 300 (200) 3.7 (5.6) 0.1 (0.15) 0.3 (0.4) 0.8 1.2 MHz pF V V (-)60 V (-)50 V IE=(-)10A, IC=0 (-)5 V 70(70) ns 400 (400) ns 70(50) ns VCC=20V IC=10IB1=-10IB2=100mA tf Switching Time Test Circuit IB1 PW=10s D.C.=1% OUT RB INPUT VR IB2 RL 200 50 + 100F + 470F (For PNP, the polarity is reversed.) VCC=20V IC -- VCE --7 0 --90 --60 A --70 90 --300A --600 Collector Current, IC - mA --80 --200A --50 --40 --100A --30 --20 --10 --20 --18 A --40 Collector Current, IC - mA 30 100A 20 IB=0 0 0.2 --30 A --20A --10A 0.4 0.6 0.8 1.0 ITR05059 IC -- VCE 2SC3392 60A 18 --2 0 40 20 2SA1338 --4 0 200A 50 Collector-to-Emitter Voltage, VCE - V IC -- VCE A --60 50A -- --8 --6 300A 60 ITR05058 --12 --10 2SC3392 A 400 70 0 --1.0 --16 --14 80 0 50 A 10 IB=0 --0.2 --0.4 --0.6 --0.8 Collector-to-Emitter Voltage, VCE - V Collector Current, IC - mA 0 0 IC -- VCE 100 A A 00 00 --5 --4 Collector Current, IC - mA 2SA1338 0 A --100 700 A 60 0 A --5V 50A 16 14 40A 12 10 30A 8 20A 6 4 10A 2 IB=0 --5 --10 --15 --20 --25 --30 --35 --40 Collector-to-Emitter Voltage, VCE - V ITR05060 0 IB=0 0 5 10 15 20 25 30 35 Collector-to-Emitter Voltage, VCE - V 40 ITR05061 No.1421-2/5 2SA1338/2SC3392 IC -- VBE --120 2SC3392 VCE=5V --40 --20 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE - V 0 2SA1338 VCE=--5V 0.2 0.4 --25C 25C 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V ITR05063 hFE -- IC 2 2SC3392 VCE=5V 1000 7 3 DC Current Gain, hFE Ta=75C 25C 5 --25C 2 100 5 3 Ta=75C 2 25C --25C 100 7 7 5 5 3 3 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC - mA 3 fT -- IC 1000 2SA1338 VCE=--10V 7 5 3 2 100 7 5 3 2 10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC - mA 3 2 1.0 5 7--1000 ITR05064 3 2 3 5 7 100 2 3 5 ITR05068 5 7 1000 ITR05065 2SC3392 VCE=10V 5 3 2 100 7 5 3 2 1.0 Output Capacitance, Cob - pF 5 7 --10 2 3 5 2 Collector-to-Base Voltage, VCB -- V 3 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC - mA 5 7 1000 ITR05067 Cob -- VCB 2SC3392 f=1MHz 2 7 --1.0 2 7 3 --10 7 5 7 10 Collector Current, IC - mA ITR05066 2SA1338 f=1MHz 2 3 fT -- IC 10 5 7--1000 Cob -- VCB 3 2 1000 Gain-Bandwidth Product, fT - MHz 2 --1.0 --1.0 0 ITR05062 7 DC Current Gain, hFE 40 0 --1.0 hFE -- IC 1000 Gain-Bandwidth Product, fT - MHz 60 20 2 Output Capacitance, Cob - pF 80 Ta=75C Collector Current, IC - mA --60 --25C --80 25C 100 Ta=75C Collector Current, IC - mA --100 0 IC -- VBE 120 2SA1338 VCE=--5V 10 7 5 3 2 1.0 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 ITR05069 No.1421-3/5 2SA1338/2SC3392 VCE(sat) -- IC --10 3 2 --1.0 5 3 2 --0.1 5 3 2 --0.01 5 2 --1.0 3 5 --10 2 3 5 --100 Collector Current, IC - mA 3 5 --1000 --1.0 7 5 3 5 --10 2 3 5 --100 Collector Current, IC - mA 3 5 7 2 tr 7 tf 5 2 3 5 10 2 3 5 100 2 --10 5 3 7 2 --100 Collector Current, IC - mA 3 7 3 2 1.0 7 5 5 1.0 2 3 5 10 2 3 5 100 2 1m s 10 ms 10 0m s 100 DC 7 op era 5 tio n 3 2 10 7 2SA1338 / 2SC3392 (For PNP, minus sign is omitted.) 5 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE - V 5 7 100 ITR05076 5 1000 ITR05073 tstg 3 2 0.1 tf 7 5 td tr 7 2 10 3 5 7 2 100 Collector Current, IC - mA ITR05074 Collector Dissipation, PC - mW 3 3 2SC3392 VCC=20V IC=10IB1=--10IB2 3 5 7 ITR05075 PC -- Ta 240 ICP=800mA IC =5 00 mA 7 5 2 SW Time -- IC 5 0.01 ASO 5 1000 ITR05071 5 2 5 3 2SC3392 IC / IB=10 7 td 7 2 VBE(sat) -- IC 1.0 1000 Collector Current, IC - mA 1.0 3 2 3 5 2 3 0.01 2 Collector Current, IC - mA Switching Time, - s 3 0.1 3 ITR05072 tstg 5 5 3 --1000 2SA1338 VCC=20V IC=10IB1=--10IB2 1.0 Switching Time, - s 2 SW Time -- IC 2 2 0.1 Collector Current, IC - mA Base-to-Emitter Saturation Voltage, VBE (sat) - V 2 2 3 7 3 --1.0 5 10 5 3 5 2 1.0 ITR05070 2SA1338 IC / IB=10 7 3 0.01 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) - V 2 2SC3392 IC / IB=10 5 Collector-to-Emitter Saturation Voltage, VCE (sat) - V Collector-to-Emitter Saturation Voltage, VCE (sat) - V 5 VCE(sat) -- IC 10 2SA1338 IC / IB=10 2SA1338 / 2SC3392 200 160 120 80 40 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR05077 No.1421-4/5 2SA1338/2SC3392 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.1421-5/5