BSO301SP H
OptiMOS®-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
≤10 secs steady state
Continuous drain current IDTA=25 °C1) -14.9 -12.6 A
TA=70 °C1) -11.9 -10
Pulsed drain current ID,pulse TA=25 °C2)
Avalanche energy, single pulse EAS ID=-14.9 A, RGS=25 ΩmJ
Gate source voltage VGS V
Power dissipation Ptot TA=25 °C1) 2.5 1.79 W
Operating and storage temperature Tj, Tstg °C
ESD class JESD22-A114 HBM
Soldering temperature °C
IEC climatic category; DIN IEC 68-1
Value
55/150/56
-55 ... 150
±20
248
-60
260
1C (1kV - 2kV)
VDS -30 V
RDS(on),max 8.0 mΩ
12.0 A
Product Summary
Type Package Marking
BSO301SP H PG-DSO-8 301SP
PG-DSO-8
Leadfree
Yes
Halogen free
Yes
packing
dry
ID -14.9 A
VGS= 10 V
VGS= 4.5 V
Rev. 1.32 page 1 2010-05-12
BSO301SP H
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point RthJS - - 35 K/W
Thermal resistance,
junction - ambient RthJA
minimal footprint,
tp≤10 s - - 110
minimal footprint,
steady state - - 150
6 cm2 cooling area1),
tp≤10 s --50
6 cm2 cooling area1),
steady state --80
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=-250µA-30 - - V
Gate threshold voltage VGS(th)
VDS=VGS,
ID=-250 µA -1 -1.5 -2
Zero gate voltage drain current IDSS
VDS=-30 V, VGS=0 V,
Tj=25 °C - -0.1 -1 µA
VDS=-30 V, VGS=0 V,
Tj=125 °C - -10 -100
Gate-source leakage current IGSS VGS=-20 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance RDS(on) VGS=-4.5 V, ID=-12 A - 8.8 12 mΩ
Drain-source on-state resistance RDS(on) VGS=-10 V, ID=-14.9 A - 6.3 8.0
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=-14.9 A 22 44 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev. 1.32 page 2 2010-05-12
BSO301SP H
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 4430 5890 pF
Output capacitance Coss - 1180 1570
Reverse transfer capacitance Crss - 970 1500
Turn-on delay time td(on) -1523ns
Rise time tr-2233
Turn-off delay time td(off) - 130 195
Fall time tf- 110 165
Gate Char
g
e Characteristics3)
Gate to source charge Qgs - -11 -15 nC
Gate charge at threshold Qg(th) - -7.1 -9.5
Gate to drain charge Qgd - -35
Switching charge Qsw - -40 -59
Gate charge total Qg- -102 -136
Gate plateau voltage Vplateau - -2.5 - V
Output charge Qoss VDD=-15 V, VGS=0 V - -36 -48
Reverse Diode
Diode continous forward current IS- - -2.1 A
Diode pulse current IS,pulse - - -60
Diode forward voltage VSD
VGS=0 V, IF=-14.9 A,
Tj=25 °C - -0.82 -1.2 V
Reverse recovery time trr
VR=15 V, IF=-14.9A,
diF/dt=100 A/µs -3240ns
Reverse recovery charge Qrr - -20 -25 nC
3)
See figure 16 for gate charge parameter definitio
n
2) See figure 3
TA=25 °C
Values
VGS=0 V,
VDS=-25 V, f=1 MHz
VDD=-15 V,
VGS=-10 V,
ID=-1 A, RG=6 Ω
VDD=-24 V,
ID=-14.9 A,
VGS=0 to -10 V
Rev. 1.32 page 3 2010-05-12
BSO301SP H
1 Power dissipation 2 Drain current
Ptot=f(TA); tp≤10 s ID=f(TA); |VGS|≥10 V; tp≤10 s
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C1); D=0 ZthJS=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
102
101
100
10-1
10-2 0.01
0.1
1
10
100
0.1 1 10 100
-V DS [V]
-I D [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
10-5
102
101
100
10-1
10-2 0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
tp [s]
ZthJS [K/W]
0
0.5
1
1.5
2
2.5
3
0 40 80 120 160
TA [°C]
Ptot [W]
0
4
8
12
16
0 40 80 120 160
TA [°C]
-I D [A]
Rev. 1.32 page 4 2010-05-12
BSO301SP H
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
2.5 2.7 3.0
3.2
3.5
4.5
10
0
5
10
15
20
25
0 10203040
-I D [A]
RDS(on) [mΩ]
C °25
C °150
0
10
20
30
40
50
60
01234
-V GS [V]
-I D [A]
0
20
40
60
0102030
-I D [A]
gfs [S]
-2.3 V
-2.5 V
-2.7 V
-3 V
-3.2 V
-3.5 V
-4.5 V
-10 V
0
10
20
30
40
50
60
0123
-V DS [V]
-I D [A]
Rev. 1.32 page 5 2010-05-12
BSO301SP H
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-14.9 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
0
2
4
6
8
10
12
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
Ciss
Coss
Crss
104
103
102100
1000
10000
0 5 10 15 20 25 30
-V DS [V]
C [pF]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
-V GS(th) [V]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
0.1
1
10
100
0 0.5 1 1.5
-V SD [V]
IF [A]
Rev. 1.32 page 6 2010-05-12
BSO301SP H
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=-14.9 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 µA
615
24
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120
-Q gate [nC]
-V GS [V]
20
22
24
26
28
30
32
34
36
-60 -20 20 60 100 140 180
Tj [°C]
-V BR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
C °25
C °100
C °125
1
10
100
1 10 100 1000
tAV [µs]
-I AV [A]
Rev. 1.32 page 7 2010-05-12
BSO301SP H
Package Outline
P-DSO-8: Outline
Rev. 1.32 page 8 2010-05-12
BSO301SP H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
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reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 1.32 page 9 2010-05-12
