BSO301SP H
OptiMOS®-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
10 secs steady state
Continuous drain current IDTA=25 °C1) -14.9 -12.6 A
TA=70 °C1) -11.9 -10
Pulsed drain current ID,pulse TA=25 °C2)
Avalanche energy, single pulse EAS ID=-14.9 A, RGS=25 mJ
Gate source voltage VGS V
Power dissipation Ptot TA=25 °C1) 2.5 1.79 W
Operating and storage temperature Tj, Tstg °C
ESD class JESD22-A114 HBM
Soldering temperature °C
IEC climatic category; DIN IEC 68-1
Value
55/150/56
-55 ... 150
±20
248
-60
260
1C (1kV - 2kV)
VDS -30 V
RDS(on),max 8.0 m
12.0 A
Product Summary
Type Package Marking
BSO301SP H PG-DSO-8 301SP
PG-DSO-8
Leadfree
Yes
Halogen free
Yes
packing
dry
ID -14.9 A
VGS= 10 V
VGS= 4.5 V
Rev. 1.32 page 1 2010-05-12
BSO301SP H
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point RthJS - - 35 K/W
Thermal resistance,
junction - ambient RthJA
minimal footprint,
tp10 s - - 110
minimal footprint,
steady state - - 150
6 cm2 cooling area1),
tp10 s --50
6 cm2 cooling area1),
steady state --80
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=-250µA-30 - - V
Gate threshold voltage VGS(th)
VDS=VGS,
ID=-250 µA -1 -1.5 -2
Zero gate voltage drain current IDSS
VDS=-30 V, VGS=0 V,
Tj=25 °C - -0.1 -1 µA
VDS=-30 V, VGS=0 V,
Tj=125 °C - -10 -100
Gate-source leakage current IGSS VGS=-20 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance RDS(on) VGS=-4.5 V, ID=-12 A - 8.8 12 m
Drain-source on-state resistance RDS(on) VGS=-10 V, ID=-14.9 A - 6.3 8.0
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=-14.9 A 22 44 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev. 1.32 page 2 2010-05-12
BSO301SP H
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 4430 5890 pF
Output capacitance Coss - 1180 1570
Reverse transfer capacitance Crss - 970 1500
Turn-on delay time td(on) -1523ns
Rise time tr-2233
Turn-off delay time td(off) - 130 195
Fall time tf- 110 165
Gate Char
g
e Characteristics3)
Gate to source charge Qgs - -11 -15 nC
Gate charge at threshold Qg(th) - -7.1 -9.5
Gate to drain charge Qgd - -35
Switching charge Qsw - -40 -59
Gate charge total Qg- -102 -136
Gate plateau voltage Vplateau - -2.5 - V
Output charge Qoss VDD=-15 V, VGS=0 V - -36 -48
Reverse Diode
Diode continous forward current IS- - -2.1 A
Diode pulse current IS,pulse - - -60
Diode forward voltage VSD
VGS=0 V, IF=-14.9 A,
Tj=25 °C - -0.82 -1.2 V
Reverse recovery time trr
VR=15 V, IF=-14.9A,
diF/dt=100 A/µs -3240ns
Reverse recovery charge Qrr - -20 -25 nC
3)
See figure 16 for gate charge parameter definitio
n
2) See figure 3
TA=25 °C
Values
VGS=0 V,
VDS=-25 V, f=1 MHz
VDD=-15 V,
VGS=-10 V,
ID=-1 A, RG=6
VDD=-24 V,
ID=-14.9 A,
VGS=0 to -10 V
Rev. 1.32 page 3 2010-05-12
BSO301SP H
1 Power dissipation 2 Drain current
Ptot=f(TA); tp10 s ID=f(TA); |VGS|10 V; tp10 s
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C1); D=0 ZthJS=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
102
101
100
10-1
10-2 0.01
0.1
1
10
100
0.1 1 10 100
-V DS [V]
-I D [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
10-5
102
101
100
10-1
10-2 0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
tp [s]
ZthJS [K/W]
0
0.5
1
1.5
2
2.5
3
0 40 80 120 160
TA [°C]
Ptot [W]
0
4
8
12
16
0 40 80 120 160
TA [°C]
-I D [A]
Rev. 1.32 page 4 2010-05-12
BSO301SP H
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
2.5 2.7 3.0
3.2
3.5
4.5
10
0
5
10
15
20
25
0 10203040
-I D [A]
RDS(on) [m]
C °25
C °150
0
10
20
30
40
50
60
01234
-V GS [V]
-I D [A]
0
20
40
60
0102030
-I D [A]
gfs [S]
-2.3 V
-2.5 V
-2.7 V
-3 V
-3.2 V
-3.5 V
-4.5 V
-10 V
0
10
20
30
40
50
60
0123
-V DS [V]
-I D [A]
Rev. 1.32 page 5 2010-05-12
BSO301SP H
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-14.9 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
0
2
4
6
8
10
12
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [m]
Ciss
Coss
Crss
104
103
102100
1000
10000
0 5 10 15 20 25 30
-V DS [V]
C [pF]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
-V GS(th) [V]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
0.1
1
10
100
0 0.5 1 1.5
-V SD [V]
IF [A]
Rev. 1.32 page 6 2010-05-12
BSO301SP H
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 VGS=f(Qgate); ID=-14.9 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 µA
615
24
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120
-Q gate [nC]
-V GS [V]
20
22
24
26
28
30
32
34
36
-60 -20 20 60 100 140 180
Tj [°C]
-V BR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
C °25
C °100
C °125
1
10
100
1 10 100 1000
tAV [µs]
-I AV [A]
Rev. 1.32 page 7 2010-05-12
BSO301SP H
Package Outline
P-DSO-8: Outline
Rev. 1.32 page 8 2010-05-12
BSO301SP H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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Rev. 1.32 page 9 2010-05-12