1
Subject to change without notice.
www.cree.com/rf
CGHV96050F2
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efciency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic anged
package for optimal electrical and thermal performance.
Rev 3.1 – September 2015
Typical Performance Over 8.4-9.6 GHz (TC = 25˚C)
Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units
Linear Gain 13.8 12.8 12.3 12.3 12.2 11.8 dB
Output Power 85 77 81 82 75 75 W
Power Gain 10.4 9.9 10.1 10.1 9.8 9.8 dB
Power Added Efciency 57 54 52 54 48 45 %
Note: Measured in CGHV96050F2-AMP (838179) under 100 uS pulse width, 10% duty, Pin 39.0 dBm (7.9 W)
Features
• 8.4 - 9.6 GHz Operation
• 80 W POUT typical
• 10 dB Power Gain
• 55 % Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop
Applications
• Marine Radar
• Weather Monitoring
• Air Trafc Control
• Maritime Vessel Trafc Control
• Port Security
PN: CGHV96050F2
Package Type: 440217
2CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Absolute Maximum Ratings (not simultaneous)
Parameter Symbol Rating Units Conditions
Drain-source Voltage VDSS 100 Volts 25˚C
Gate-source Voltage VGS -10, +2 Volts 25˚C
Power Dissipation PDISS 57.6 / 86.4 Watts (CW / Pulse)
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Drain Current IDMAX 6 Amps
Maximum Forward Gate Current IGMAX 14.4 mA 25˚C
Soldering Temperature1TS245 ˚C
Screw Torque τ40 in-oz
Thermal Resistance, Junction to Case RθJC 1.40 ˚C/W Pulse Width = 100 µs, Duty Cycle =
10%, PDISS = 86.4 W
Thermal Resistance, Junction to Case RθJC 2.12 ˚C/W CW, 85˚C, PDISS = 57.6 W
Case Operating Temperature3TC-40, +150 ˚C
Note:
1 Current limit for long term reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 See also, the Power Dissipation De-rating Curve on Page 9.
Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 14.4 mA
Gate Quiscent Voltage VQ– -3.0 – V VDS = 40 V, ID = 500 mA
Saturated Drain Current2IDS 10.5 13.0 – A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBD 100 – – V VGS = -8 V, ID = 14.4 mA
RF Characteristics3
Small Signal Gain S21 10.5 11.8 – dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
Input Return Loss 1 S11 – –5.2 –2.1 dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm,
Frequency = 8.4-9.6 GHz
Output Return Loss S22 – –12.3 –9.0 dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
Power Output3, 4 POUT 47 70 – W VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm
Power Added Efciency3, 4 PAE 32 45 – % VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm
Output Mismatch Stress VSWR – – 5:1 YNo damage at all phase angles, VDD = 40 V,
IDQ = 500 mA,
Notes:
1 Measured on-wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV96050F2-AMP (AD-09115) under 100 µS pulse width, 10% duty
4 Fixture loss de-embedded using the following offsets. At 9.6 GHz, input and output = 0.50 dB.
3CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
CGHV96050F2 Typical Performance
Figure 1. - Small Signal Gain and Return Loss vs Frequency
of CGHV96050F2 measured in CGHV96050F2-AMP
VDS = 40 V, IDQ = 500mA
Figure 2. - Power Gain vs. Frequency and Input Power
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
-
10
-5
0
5
10
15
20
Gain (dB), Return Losses (dB)
-30
-25
-20
-15
-
10
7 7.5 8 8.5 9 9.5 10 10.5 11
Gain (dB), Return Losses (dB)
Frequency (GHz)
S11typ
S22typ
S21typ
6
8
10
12
14
Power Gain (dB)
PG Vs Freq & Pin
Pulse 100 uS/ 10 % Duty
0
2
4
6
7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0
Power Gain (dB)
Frequency (GHz)
Psat
Pin = 40 dBm
Pin = 39 dBm
Pin = 38 dBm
Pin = 37 dBm
Pin = 36 dBm
4CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
CGHV96050F2 Typical Performance
Figure 3. - Output Power vs. Input Power
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
Figure 4. - Power Gain vs. Frequency and Input Power
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
7
8
9
10
11
12
13
14
15
Power Gain (dB)
Power Gain vs Pin
Pulse 100 uS/ 10% duty
0
1
2
3
4
5
6
7
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42
Power Gain (dB)
Input Power(dBm)
9.0 GHz
9.2 GHz
9.4 GHz
9.6 GHz
40
45
50
Power Output (dBm)
Pout vs Pin
Pulse 100 uS/ 10% duty
9.0 GHz
9.2 GHz
9.4 GHz
9.5 GHz
25
30
35
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42
Power Output (dBm)
Power Input (dBm)
5CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
CGHV96050F2 Typical Performance
Figure 5. - Power Added Efciency vs. Input Power
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
Figure 6. - Output Power vs. Time
VDD = 40 V, PIN = 39 dBm, Duty Cycle = 10%
30
35
40
45
50
55
60
Power Added E fficiency (%)
Power Added Efficiency vs. Pin
Pulse 100 uS/ 10% duty
9.0 GHz
9.2 GHz
9.4 GHz
9.6 GHz
0
5
10
15
20
25
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42
Power Added E fficiency (%)
Input Power (dBm)
48.20
48.30
48.40
48.50
48.60
48.70
Power (dBm)
Power vs. Time (Pin 39 dBm)
10, 50 , 100 and 300 uS (10 % duty)
10us
50us
100us
300us
47.70
47.80
47.90
48.00
48.10
0 50 100 150 200 250 300 350 400 450
Power (dBm)
Pulse Length (uS)
6CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
CGHV96050F2 Typical Performance
Figure 7. - Output Power vs. Input Power & Frequency
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
Figure 8. - Power Added Efciency vs. Input Power & Frequency
VDD = 40 V, PIN = 39 dBm, Duty Cycle = 10%
45.0
46.0
47.0
48.0
49.0
50.0
Output Power (dBm)
Pout Vs Freq & Pin
Pulse 100 uS / 10 % Duty
Psat
Pin = 40
40.0
41.0
42.0
43.0
44.0
7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0
Output Power (dBm)
Frequency (GHz)
Pin = 40
Pin = 39
Pin = 38
Pin = 37
Pin = 36
30
40
50
60
70
Power Added Efficiency (%)
PAE Vs. Freq & Pin
Pulse 100 uS / 10 % Duty
Psat
0
10
20
30
7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0
Power Added Efficiency (%)
Frequency (GHz)
Psat
Pin = 40
Pin = 39
Pin = 38
Pin = 37
Pin = 36
7CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
CGHV96050F2-AMP Demonstration Amplier Circuit Bill of Materials
Designator Description Qty
R1 RES, 47 OHM, +/- 1%, 1/16W,0603 1
C1 CAP, 0.9pF, +/- 0.05pF,200V, 0402 1
C11 CAP, 1.6pF, +/- 0.1 pF,200V, 0402 1
C2, C12 CAP, 1.0pF, +/- 0.1 pF,200V, 0402 2
C3,C13 CAP, 10.0pF, +/-5%,250V, 0603, 2
C4,C14 CAP, 470PF, 5%, 100V, 0603, X 2
C5,C15 CAP,33000PF, 0805,100V, X7R 2
C6 CAP 10UF 16V TANTALUM 1
C18 CAP, 470uF, 20%, 80V, ELECT, SMD Size K 1
J1,J2 CONN,N,FEM,W/.500 SMA FLNG 2
J3 HEADER RT>PLZ .1CEN LK 9POS 1
J4 CONNECTOR ; SMB, Straight, JACK,SMD 1
W1 CABLE ,18 AWG, 4.2" 1
PCB, RF35, 2.5 X 3.0 X (0.020/0.250) 1
TRANSISTOR, CGHV96050F2 1
#2 SPLIT LOCKWASHER SS 4
2-56 SOC HD SCREW 1/4 SS 4
CGHV96050F2-AMP Demonstration Amplier Circuit
8CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
CGHV96050F2-AMP Demonstration Amplier Circuit Schematic
CGHV96050F2-AMP Demonstration Amplier Circuit Outline
9CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
CGHV96050F2 Power Dissipation De-rating Curve
Note: Shaded area exceeds Maximum Case Operating Temperature (See Page 2).
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C
50
60
70
80
90
100
Power dissipation (W)
Power dissipation derating curve vs. Max TCase
CW & Pulse (100 uS/ 10% duty)
0
10
20
30
40
0 50 100 150 200 250
Power dissipation (W)
Flange Temperature (C)
CW
Pulse 100uS / 10%
Note
10 CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Product Dimensions CGHV96050F2 (Package Type — 440217)
11 CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Part Number System
Parameter Value Units
Upper Frequency19.6 GHz
Power Output 50 W
Package Flange -
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code Code Value
A 0
B 1
C 2
D 3
E 4
F 5
G 6
H 7
J 8
K 9
Examples: 1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Package, Power Test
Power Output (W)
Upper Frequency (GHz)
Cree GaN HEMT High Voltage
Product Line
CGHV96050F2
12 CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Product Ordering Information
Order Number Description Unit of Measure Image
CGHV96050F2 GaN HEMT Each
CGHV96050F2-TB GaN HEMT Each
CGHV96050F2-AMP Test board without GaN HEMT Each
CGHV96050F2-JMT CGHV96050F2 Delivered in a JEDEC
Matrix tray
50 parts / tray.
Order multiple = 50pcs
13 CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
