112
GaAlAs Infrared Emitting Diodes
TO-46 Lensed Package — 880 nm VTE1163H
PACKAGE DIMENSIONS inch (mm)
CASE 24 TO-46 HERMETIC (Lensed)
CHIP SIZE: .018" x .018"
DESCRIPTION
This narrow beam angle T O-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip
suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Tem peratures
Storage and Operating: -55°C to 125°C
Continuous Pow er Dissipation: 200 m W
Derate above 30°C: 2.11 mW/°C
Maximum Continuou s Current: 100 mA
Derate above 30°C: 1.05 mA/°C
Peak Forward C urrent, 10 µs, 100 pps: 3A
Temp . Coefficient of Power Output (Typ .): -.8%/°C
Maximum Reverse Voltage: 5.0V
Maximum Re verse Current @ V
R
= 5V: 10 µA
Peak Wavelength (Typical ): 880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): 35 pF
Response Time @ I
F
= 20 mA
Rise: 1.0 µs F all: 1.0 µs
Lead Soldering Temperat ure: 260° C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also G aA lAs curves, pages 108-110)
Refer to General Product Notes, page 2.
P art Number
Output Forward Drop Half Power Beam
Angle
Irradiance Radiant
Intensity Total Power Test
Current VF
EeCondition IePOIFT @ IFT θ1/2
mW/cm2distance Diameter mW/sr mW mA
(Pulsed) Volts Typ.
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1163H 22 28 36 6.4 285 110 1.0 2.8 3.5 ±10°
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
RoHS Compliant
