Ordering number: EN1972A SA''YO No.1972a || _28A1470/28C3747 PNP/NPN Epitaxial Planar Silicon Transistors 60V/7A High-Speed Switching Applications Applications - Inductance, lamp drivers. . Inverters, converters (strobes, flashes, FLT lighting circuits). . Power amplifiers (high-power car stereos, motor control). . High-speed switching (switching regulators, drivers)., Features . Low saturation voltage. + Excellect dependence of hp, on current. . Fast switching time. .- Micaless package facilitating nounting. (.):2SA1470 Absolute Maximum Ratings at Ta=25C Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter -to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Vv CBO Vero _ VERO Ig Icp Po Tj Tstg Electrical Characteristics at Ta=25C 88 Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector to Emitter Saturation Voltage Te=25C unit (-)80 (-)60 (-)5 (+)7 (-)10 2 25 150 -55 to 150 . . QQqf2ekrradd min typ max unit I Vop=(-)40V, 1,20 (-)0.1 mA CB CB Ippo Vep=(- -)AV, Toe0 (=)0.1 mA hep Vor=(- -)2V,I=(-)1A = 70 = 280F f =(-)5V,Ige(-)1A 100 MHz T Yor Cc Vor (sat) Ig=(-)3.5A,1p=(-)0. 175A (-)0.4 Vv Continued on next page. Package Dimensions 2041 (unit:mm) = be-shen| 2.58 2.55 E c 8 E: Emitter C: Collecter B: Base MM 7997076 0019769 O42 ma SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN et SANYO: TO220ML 38277KI/N265KI,TS No.1972-1/4 25A1470/28C3747 Continued from preceding page. min typ max unit Collector-to-Base Breakdown Vopr)cpo Ic=(-) 1mA,1,=0 (-)80 Vv Voltage Collector-to-Emitter Vv Ip=(-)1mA,Rppsco|8=6(~) 60 Vv Breakdown Voltage (BR)CEO c BE Enitter-to-Base Breakdown V(BR)EBO Ip=(-) 1mA,I,=0 (-)5 Vv Voltage Turn-ON Time ton See specified Test Circuit. 0.1 ps Storage Time tote " ; 0.5 ps Fall Time te " - 0.1 ps *: The 2SA1470/2SC3747 are classified by 1A hp, as follows: [70 Q 140 [100 R 200 | 140 Switching Time Test Circuit Bi ' PW=20 OC s1 JL INPUT VBE=-5V 280 | 201g; = 20Igg=1p=3A Vec=20v (For PNP, the polarity is reversed.) 5 Ic - VBE 28A1 470 17? Von= 2V wes 5 5 ea 5 -s oO -3 pt) 3 2b a 9 oO -4 4 Base-to-Emitter Voltage, Vpn -V hre - Ic 28Al 470 V 2V Tg= 120C 25 DC Current Gain bpp af 3 8 -01 1.0 Collector Current,I, - A -10 Unit (resistance : 2, capacitance : F) ic - VBE @ 2803747 =2V Collector Current Ig -A ~~ ~ w Sy on n oy o Base-to-Emitter Voltage, Vp, - V hre - Ic 5 2803747 Vom== 2V shee 8 DC Current Gain 3 Ot 1.0 Collector Current ,Ig ~A | ?997076 00159770 a 89 25A1470/2SC3747 ft - Ic 28Al 470 Vog= 5V 8 Gain Bandwidth Product fp - MHz 3 -001 -01 -1.0 -10 Collector Current ,I - A > ' VcE(sat) - Ic =~ 28Ai 470 3 I/ Ip=20 2 fa o =~ e710 2 - a 3 > -04 Ad a & = a W -o01 04 AO =10 Collector Current,I - A ASO 25A1 470 x A t 3 sig - & de o Collector Current 9 ~10 -m _ Collector-to-Emitter Voltage Voz - V Pc - Ta & Pa - W 8 oR Ba ~ sink Collector Dissipation, Ambient Temperature ,Ta - % Vor (sat) -V> Gain Bandwidth Product fq - MHz fr - I 0.01 o1 40 10 Collector Current,Ip - A VcE(sat) ~ Ic = o 47 Ic/ Ip=20 ~1.0 4 > ci o = o41 aa a . a a opt fl" oot O3 1.0 o Collector Current,I, - A ASO Igp 2 nv t o He S 3. 10 7 oo be 3 ~~ oO o a 04 Oo 10 700: Collector-to-Hase Voltage ,Vopg -V 90 Mm 7997076 0014771 770 oo