HITACHI 3SK154 SILICON N-CHANNEL DUAL GATE MOS FET VHF AMPLIFIER VHF TY TUNER RF AMPLIFIER MAXIMUM CHANNEL POWER DISSIPATION CURVE ue MN -- r* Brame 6 Ot : l. Sourve 2, Cite | 3. Gate 2 4. Drain (Dinenjans ie ant (MPAK-4 M ABSOLUTE MAXIMUM RATINGS (Ta=25C) hem Symbol SSK 154 Unit Drain to source voltage Vioosx 1S v S Gate | to source voltage Vous 28 Vv a Gate 2 lo source vollage Vous 28 Vv = Drain current In 35 mA $ Channel power dissipation | Poy 150 mv : Channel temperature Teh 125 *< ' Storage temperature Tug 5 to +125 C & M ELECTRICAL CHARACTERISTICS (Ta=25C) Test Condition on auet Ambient temperature Ta Ct | amin, ee Symbol | max. | Unit Drain to source breakdown voltage Vigroosx | Vois = Vaas = -BY. [p = 200A a Is _ a Gale | to source breakdown voltage Vienwiiss lor = LQuA, Vors = Vos =0 / 8 #20 i Vv Gate 2 10 source breakdown valtage Vierwrss | Io: =lOWA. Vers = Vps = 0 | an] | 420 i; Gute 1 cutoff current Jciss__|_Vars = #8V, Vers = Vos = 0 |_ =| +100 | Gate 2 cutoff current a lass. Vor = 28V. Vais = Vos =0 _ ] +100 nA 7 Gate 1 to source cutoff voltage a "Versetn Vos = 10V, Vos = 3. lp @ 1OOA _ _ -2 v : Gate 2 to source culoff voltage ai Voorsietn Vos = 10V, Vens = 3, [lo = |QOPA |= = = _ ve Drain current ee loss | Vas # 6Y, Vars = 3, Vas = 0 jo _ 3000 OMA Forward transfer admittance lye Vos = 6V, Vaas = 3V, In = LOMA, 15 _ mS f= (kHz Input capacitance Ons _ _ 4s | pF Oulpul capacitance Cow Vos = 6V, Vaas = 3V, In = LOmA, ~ 2 | pF : - ee a fan Reverse transfer capacitance Cres 0.03 jo- | pF Power gain PG Vos = 6. Vers = 3. Ip = LOMA. 22 . | dB Noise figure NF f = 200MHz f=] =] 3] * Marking is [IZ-|. @ Sce characteristic curves of 3SK96.