Medium Power Transistor Features: * * * igh performance, low frequency devices typically with current ratings 2A. H Up to 1W power dissipation Silicon Power Switching Transistors Medium Power Amplifier and Switching Applications Pin Configuration 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Description Symbol 2N5320 NPN Collector Emitter Voltage Vceo 75 Collector Base Voltage Vcbo 100 Emitter Base Voltage Vebo 7 Collector Current-Continuous Ic 2 Base Current Ib 1 Power Dissipation at Ta = 25C Derate above 25C Operating and Storage Junction Temperature Range V A 1 5.71 Pd Power Dissipation at Tc = 25C Derate above 25C Units W mW/C 10 57.14 Tj, Tstg -65 to +200 C Thermal Characteristics Junction to Ambient in Free Air Rth(j-a) 175 Junction to Case Rth(j-c) 17.5 C/W Electrical Characteristics: (Tc = +25C unless specified otherwise) Description Test Condition Min. Vceo Ic = 100mA, Ib = 0 75 - V Collector Cut off Current Icex Vce = 70V, Vbe = 1.5V, Tc = 150C Vce = 100V, Vbe = 1.5V - 5 100 mA A Emitter Cut off Current Iebo Vbe = 7V, Ic = 0 - 100 A DC Current Gain *hfe Ic = 1A, Vce = 2V Ic = 0.5A, Vce = 4V 10 30 130 - Collector Emitter Saturation Voltage *Vce(sat) Ic = 500mA, Ib = 50mA - 0.5 Base Emitter On Voltage *Vbe(on) Ic = 500mA, Vce = 4V - 1.1 Collector Emitter Voltage Symbol Max. Units V *Pulsed : Pulse Width 300s, Duty Cycle 2% www.element14.com www.farnell.com www.newark.com Page <1> 13/12/12 V1.0 Medium Power Transistor Electrical Characteristics: (Tc = +25C unless specified otherwise) Description Symbol Test Condition Min. Max. Units hfe Ic = 50mA, Vce = 4V, f = 10MHz 5 - - Turn On Time ton Vcc = 30V, Ic = 500mA, IB1 = 50mA - 80 Turn Off Time toff Vcc = 30V, Ic = 500mA, IB1 = IB2 = 50mA - 800 Dynamic Characteristics Small Signal Current Gain Switching Characteristics ns Dim. Min. Max. A 8.5 9.39 B 7.74 8.5 C 6.09 6.6 D 0.4 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.7 - L 42 48 Dimensions : Millimetres Part Number Table Description Vceo Max (V) Ic Max. (A) hfe Min. at Ic = 500mA Vce(sat) Max. (V) at Ic = 500mA Package and Pin Out Type Part Number Transistor, NPN, TO-39 75 2 30 0.5 TO-39 PNP 2N5320 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 13/12/12 V1.0