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Page <1> V1.013/12/12
Medium Power Transistor
Features:
• High performance, low frequency devices typically with current ratings 2A.
Up to 1W power dissipation
• Silicon Power Switching Transistors
• Medium Power Amplier and Switching Applications
Electrical Characteristics: (Tc = +25°C unless specied otherwise)
Pin Conguration
1. Emitter
2. Base
3. Collector
Absolute Maximum Ratings
Description Symbol 2N5320 NPN Units
Collector Emitter Voltage Vceo 75
VCollector Base Voltage Vcbo 100
Emitter Base Voltage Vebo 7
Collector Current-Continuous Ic2A
Base Current Ib1
Power Dissipation at Ta = 25°C
Derate above 25°C Pd
1
5.71 W
mW/°C
Power Dissipation at Tc = 25°C
Derate above 25°C
10
57.14
Operating and Storage Junction
Temperature Range Tj, Tstg -65 to +200 °C
Thermal Characteristics
Junction to Ambient in Free Air Rth(j-a) 175 °C/W
Junction to Case Rth(j-c) 17.5
Description Symbol Test Condition Min. Max. Units
Collector Emitter Voltage Vceo Ic = 100mA, Ib = 0 75 - V
Collector Cut off Current Icex Vce = 70V, Vbe = 1.5V, Tc = 150ºC
Vce = 100V, Vbe = 1.5V -5
100
mA
μA
Emitter Cut off Current Iebo Vbe = 7V, Ic = 0 - 100 μA
DC Current Gain *hfe Ic = 1A, Vce = 2V
Ic = 0.5A, Vce = 4V
10
30 130 -
Collector Emitter Saturation Voltage *Vce(sat)Ic = 500mA, Ib = 50mA - 0.5 V
Base Emitter On Voltage *Vbe(on)Ic = 500mA, Vce = 4V - 1.1
*Pulsed : Pulse Width ≤300μs, Duty Cycle ≤2%
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Page <2> V1.013/12/12
Medium Power Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Dimensions : Millimetres
Dim. Min. Max.
A 8.5 9.39
B 7.74 8.5
C 6.09 6.6
D 0.4 0.53
E - 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.86
J 0.73 1.02
K 12.7 -
L 42° 48°
Description
Vceo
Max
(V)
Ic
Max.
(A)
hfe
Min. at
Ic = 500mA
Vce(sat)
Max.
(V)
at Ic = 500mA
Package and
Pin Out Type Part Number
Transistor, NPN,
TO-39 75 2 30 0.5 TO-39 PNP 2N5320
Part Number Table
Description Symbol Test Condition Min. Max. Units
Dynamic Characteristics
Small Signal Current Gain hfe Ic = 50mA, Vce = 4V, f = 10MHz 5 - -
Switching Characteristics
Turn On Time ton Vcc = 30V, Ic = 500mA, IB1 = 50mA - 80
ns
Turn Off Time toff Vcc = 30V, Ic = 500mA,
IB1 = IB2 = 50mA - 800
Electrical Characteristics: (Tc = +25°C unless specied otherwise)
