NIP rx GATE ALSO BACKSIDE CONTACT 0.030 10.782) ALL DIMENSIONS IN INCHES (ALL DIMENSIONS IN MILLIMETERS) n-channel JFET designed for... Low ON Resistance Analog Switches Commutators Choppers Integrator Reset Capacitors Low Noise Audio Amplifiers TYPE PACKAGE Single TO-39 Single TO-52 Single TO-92 Single TO-92 Lead-form Single Chip PERFORMANCE CURVES (25C unless otherwise noted) 1p DRAIN CURRENT (mA} Ip DRAIN CURRENT {mA} 9fs FORWARD TRANSCONDUCTANCE {mmbos) Output Characteristic 10 6 20 a 30 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics ad Vps = 20V sool\-Ne 200 \ AAINN LEANN Vas .GATE-SOURCE VOL TAGE (VOLTS) Forward Transconductance vs Drain Current Vpg * 20 f=t -1 -2 3 4 5 6 Vgs GATE-SOURCE VOLTAGE (VOLTS) rps/rps* NORMALIZED DRAIN- Drain Cutoff Current vs Ambient Temperature 05 = TT < |vos-5V , e Vas =-10V 104] A Y 2 F. | & 103 i s Y ] oo Z 102 @ a ' 40 L z= he S$ A a 4 SOURCE RESISTANCE (OHMS) TDS DRAIN-SOURCE RESISTANCE (OHMS) -76 -60-25 0 25 50 75 100 125 150 176 T TEMPERATURE {C} ON Resistance vs Ambient Temperature Ip1mA =0 T TEMPERATURE (C) Resistance vs Normalized Gate-Source Voltage = S aR 0 0.2 0.4 a6 08 1.0 Vas NORMALIZED GATE-SOURCE =_ VOLTAGE (VOLTS) Vast(otf} BENEFITS: PRINCIPAL DEVICES U320-2 2N5432-34 J108-10 J108-18 -110-18 All of the above devices Common-Source Capacitance vs Normalized Gate-Source Voltage CAPACITANCE (pF) Equivalent Input Noise Voltage and Hz) en NOISE VOLTAGE {nV: Ig - GATE CURRENT ina) -01 Siliconix Low Insertion Loss Small Error in Measurement Systems Vston) < 50 mV (2NS432} High Off-Isolation Ip(o) < 200 pA High Speed tdion) < 4 ns Low Noise Audio-Freq Amplification en <2 nV//Hz at 1 kHz f= 1MHz Crss Veg - NORMALIZED GATE-SOURCE Uoze (VOLTAGE (VOLTS) Vastott) Noise Current vs Frequency 40-13 Nw a (24 Ad00s) LNIUUND 3SION t FREQUENCY {H2) Gate Currents vs Drain-Gate Voltage Ig @ip=3mA @Vps*0 0 2 4 6 & 10 12 14 16 18 20 VpG - ORAIN-GATE VOLTAGE (VOLTS) 5-10 1979 Siliconix incorporated PERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) Input Admittance Common Gate vs Frequency = x Vigs ~ INPUT ADMITTANCE {umhos}* f FREQUENCY (MHz) Output Admittance Common Gate vs Frequency Yes OUTPUT ADMITTANCE (mmhos} 1 - FREQUENCY (MHz) Forward Transfer Admittance Common Gate vs Frequency = x & 3 = 7o 100 200 f FREQUENCY (MHz) Wig - FORWARD TRANSFER ADMITTANCE (rmbos) Gain Intermodulation Characteristics 30 -VOD = 20V Ip =27 mA TPUT POWER {dBm} f s -70 -60 ~50-40-30-20-10 0 10 20 INPUT POWER (dBm) Reverse Transfer Admittance Common Gate vs Frequency x Yrg REVERSE TRANSFER ADMITTANCE (mmhos) FREQUENCY (MHz} Drain Current & ON" Resistance vs Gate~Source Voltage 20 =BV,Ip=30A v. 0 tpg @ Ip = 1 mA, Vag =0 =1mA, =0 Ings SATURATION DRAIN CURRENT (SWHO) 3ONV1SISIY .NO. 304NOS-Nivua S42 Q = = Vestotf) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 5-11 1979 Siliconix incorporated diN