BAR 63 ... W Silicon PIN Diode 3 * PIN diode for high speed switching of RF signal * Low forward resistance * Very low capacitance 2 * For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181 VSO05561 EHA07179 EHA07187 Type Marking Pin Configuration Package BAR 63-04W G4s 1 = A1 2 = C2 3=C1/A2 SOT-323 BAR 63-05W G5s 1 = A1 2 = A2 3 = C1/2 SOT-323 BAR 63-06W G6s 1 = C1 2 = C2 3 = A1/2 SOT-323 Maximum Ratings Value Unit Parameter Symbol Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation, TS 105 C Ptot 250 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA 340 RthJS 180 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm 1 Oct-20-1999 BAR 63 ... W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 - - V IR - - 50 nA VF - 0.95 1.2 V DC characteristics Breakdown voltage V(BR) I(BR) = 5 A Reverse current VR = 20 V Forward voltage IF = 100 mA AC characteristics Diode capacitance pF CT VR = 0 V, f = 100 MHz - 0.3 - VR = 5 V, f = 1 MHz - 0.21 0.3 Forward resistance rf IF = 5 mA, f = 100 MHz - 1.2 2 IF = 10 mA, f = 100 MHz - 1 - rr - 75 - ns Ls - 1.4 - nH Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance 2 Oct-20-1999 BAR 63 ... W Forward current IF = f (TA *;TS ) * mounted on alumina 120 mA 100 TS 90 IF 80 TA 70 60 50 40 30 20 10 0 0 20 40 60 80 120 C 100 150 TA ,TS Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 3 - IFmax / IFDC RthJS K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Oct-20-1999 BAR 63 ... W Diode capacitance CT = f (VR) Forward resistance rf = f (I F) f = 100MHz f = 1MHz EHD07139 0.5 CT EHD07138 10 2 rf pF 0.4 10 1 0.3 0.2 10 0 0.1 0 0 10 20 V VR 10 -1 -2 10 30 4 10 -1 10 0 10 1 mA 10 2 F Oct-20-1999