2N5912C - Linear Integrated Systems, Inc.

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FEATURES

ImprovedDirectReplacementforSILICONIX&NATIONAL2N5912C

LOWNOISE(10KHz)en~4nV/√Hz

HIGHTRANSCONDUCTANCE(100MHz)gfs≥4000µS

ABSOLUTEMAXIMUMRATINGS1

@25°C(unlessotherwisenoted)

MaximumTemperatures

StorageTemperature‐65°Cto+150°C

OperatingJunctionTemperature‐55°Cto+135°C

MaximumPowerDissipation

ContinuousPowerDissipation(Total)500mW

MaximumCurrents

GateCurrent50mA

MaximumVoltages

GatetoDrain‐25V

GatetoSource‐25V



MATCHINGCHARACTERISTICS@25°C(unlessotherwisestated)

SYMBOLCHARACTERISTICMINTYPMAXUNITSCONDITIONS

|VGS1–VGS2|DifferentialGatetoSourceCutoffVoltage ‐‐ ‐‐ 40mVVDG=10V,ID=5mA

∆|VGS1–VGS2|/∆T



DifferentialGatetoSourceCutoff

VoltageChangewithTemperature

‐‐ ‐‐ 40µV/°CVDG=10V,ID=5mA

TA=‐55°Cto+125°C

IDSS1/IDSS2



GatetoSourceSaturationCurrentRatio0.95 ‐‐ 1%VDS=10V,VGS=0V

|IG1–IG2|DifferentialGateCurrent ‐‐ ‐‐ 20nAVDG=10V,ID=5mA

TA=+125°C

gfs1/gfs2



ForwardTransconductanceRatio20.95 ‐‐ 1%VDS=10V,ID=5mA,f=1kHz

CMRRCommonModeRejectionRatio ‐‐ 85‐‐ dBVDG=5Vto10V,ID=5mA

ELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)

SYMBOLCHARACTERISTICSMIN.TYP.MAX.UNITSCONDITIONS

BVGSSGatetoSourceBreakdownVoltage‐25 ‐‐  

V



IG=‐1µA,VDS=0V

VGS

(

off

)

GatetoSourceCutoffVoltage‐1 ‐‐ ‐5VDS=10V,ID=1nA

VGS

(

)

GatetoSourceForwardVoltage ‐‐ 0.7 ‐‐ IG=1mA,VDS=0V

VGSGatetoSourceVoltage‐0.3 ‐‐ ‐4VDG=10V,IG=5mA

IDSSGatetoSourceSaturationCurrent37 ‐‐ 40mAVDS=10V,VGS=0V

IGSSGateLeakageCurrent3 ‐‐ ‐1‐50

pA

VGS=‐15V,VDS=0V

IGGateOperatingCurrent ‐‐ ‐1‐50VDG=10V,ID=5mA

gfsForwardTransconductance4000 ‐‐ 10000

µS



VDG=10V,ID=5mA

4000 ‐‐ 10000

gosOutputConductance ‐‐ ‐‐ 100

‐‐ ‐‐ 150

CISSInputCapacitance ‐‐ ‐‐ 5pF



VDG=10V,ID=5mA,f=1MHz

CRSSReverseTransferCapacitance ‐‐ ‐‐ 1.2

NFNoiseFigure ‐‐ ‐‐ 1dBVDG=10V,ID=5mA,f=10kHz,RG=100KΩ

enEquivalentInputNoiseVoltage ‐‐ 720nV/√HzVDG=10V,ID=5mA,f=100Hz

‐‐ 410VDG=10V,ID=5mA,f=10kHz

Notes:1.AbsoluteMaximumratingsarelimitingvaluesabovewhichserviceabilitymaybeimpaired 2.PulseTest:PW≤300µsDutyCycle≤3%

3.Assumessmallervalueinnumerator



2N5912C

MONOLITHIC DUAL

N-CHANNEL JFET

Linear S

stems re

laces discontinued Siliconix & National 2N5912C

2N5912C Applications:

 Wideband Differential Amps

 High-Speed,Temp-Compensated Single-

Ended Input Amps

 High-Speed Comparators

 Impedance Converters and vibrations

detectors.

The 2N5912C are monolithic dual JFETS. The

monolithic dual chip design reduces parasitics and

gives better performance at very high frequencies while

ensuring extremely tight matching. These devices are

an excellent choice for use as wideband differential

amplifiers in demanding test and measurement

applications. The 2N5912C is a direct replacement for

discontinued Siliconix and National 2N5912C.

The hermetically sealed TO-71 is well suited for military

applications.

(See Packaging Information).

Please contact Micross for full package and die dimensions:

Email: chipcomponents@micross.com

Web: www.micross.com/distribution.aspx

TO-71 (Top View) Available Packages:

2N5912C in TO-71

2N5912C available as bare die