oH S CO M PL IA NT TISP4070L3LM, TISP4350L3LM *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xx0L3LM Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge VDRM Device LM Package (Top View) T(A) NC R(B) V(BO) V V `4070 58 70 `4350 275 350 MD4XATA NC - No internal connection on pin 2 Device Symbol Ring-Tip Protection ............................................ TISP4350L3LM Electronics Protection ....................................... TISP4070L3LM Rated for UL 1950, ITU-T and TIA/EIA-IS-968 Wave ITSP Shape A TIA/EIA-IS-968 10/160 50 (formerly FCC Part 68) 10/560 30 Surge Standard Type A B 1 2 3 TIA/EIA-IS-968 9/720 UL 1950/ ITU-T K.21 10/700 T R SD4XAA Terminals T and R correspond to the alternative line designators of A and B 40 Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities. After a Type A surge (200 A, 10/160, and 100 A, 10/560) the equipment is allowed to be non-operational or operational. For an operational pass, series resistance must be added to reduce the Type A currents to within the TISP4xxxL3LM ratings (50 A, 10/160 and 30 A, 10/560). Alternatively, a series fuse with an I2t greater than 0.45 A2s and less than 5.6 A2s could be used to give a non-operational pass. After a Type B surge the equipment must be operational. As the TISP4xxxL3LM has a current rating of 40 A, will survive both Type B surges, metallic (25 A, 9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to Type B surges. For metallic protection, the TISP4350L3LM is connected between the Ring and Tip conductors. For longitudinal protection two TISP4350L3LM protectors are used; one between the Ring conductor to ground and the other between the Tip conductor to ground. The FCC Part 68 B type ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4350L3LM will not clip the B type ringing voltage as it has a high impedance up to 275 V. The TISP4070L3LM should be connected after the hook switch to protect the following electronics. As the TISP4070L3LM has a high impedance up to 58 V, it will switch off after a surge and not be triggered by the normal exchange battery voltage. How To Order Device Package Type Carrier Quantity Order As TISP4070L3 LM (Straight Lead DO-92) Bulk Pack 2 000 TISP4070L3LM-S TISP4350L3 LM (Straight Lead DO-92) Bulk Pack 2 000 TISP4350L3LM-S *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xx0L3LM Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted) Rating `4070 `4350 Repetitive peak off-state voltage Symbol Value Unit VDRM 58 275 V ITSP 50 40 40 30 A ITSM 4 A diT/dt TJ Tstg 250 -40 to +150 -65 to +150 A/s C C Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/160 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/160 s voltage wave shape) 5/310 (ITU-T K.21, 10/700 voltage wave shape) 5/320 (TIA/EIA-IS-968 (formerly FCC Part 68), 9/720 s voltage wave shape) 10/560 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/560 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2 and 3) 50/60 Hz, 1 s Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A Junction temperature Storage temperature range NOTES: 1. Initially, the TISP4xxxL3LM must be in thermal equilibrium with TJ = 25 C 2. The surge may be repeated after the TISP4xxxL3LM returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C. Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) Parameter Test Conditions Max Unit TA = 85 C 5 10 A dv/dt = 250 V/ms, RSOURCE = 300 `4070 `4350 70 350 V dv/dt = 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A '4070 '4350 78 359 V 250 3 350 mA V mA IDRM Repetitive peak offstate current VD = V DRM V(BO) Breakover voltage V(BO) Breakover voltage I(BO) VT IH Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current dv/dt ID Coff Off-state capacitance Min dv/dt = 250 V/ms, RSOURCE = 300 IT = 5 A, tW = 100 s IT = 5 A, di/dt = - /+ 30 mA/ms 40 120 Linear voltage ramp, Maximum ramp value < 0.85 VDRM VD = 50 V f = 100 kHz, Vd = 1 V rms, VD = 0, VD = 1 V, VD = 5 V f = 100 kHz, Vd = 1 V rms, VD = 0, VD = 1 V, VD = 5 V Typ TA = 25 C kV/s 5 TA = 85 C `4070 `4350 40 38 31 26 24 20 10 A 50 48 39 33 30 25 pF JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xx0L3LM Overvoltage Protector Series Thermal Characteristics Parameter RJA Junction to free air thermal resistance Test Conditions Min Typ EIA/JESD51-3 PCB, I T = I TSM(1000) , TA = 25 C, (see Note 4) 265 mm x 210 mm populated line card, 4-layer PCB, I T = I TSM(1000) , TA = 25 C Max Unit 120 C/W 57 NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xx0L3LM Overvoltage Protector Series Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM V(BO) I(BO) IH IDRM VDRM -v VD ID ID VD VDRM +v IDRM IH I(BO) V(BO) ITSM Quadrant III Switching Characteristic ITSP -i PMXXAJA Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xx0L3LM Overvoltage Protector Series MECHANICAL DATA Device Symbolization Code Devices will be coded as below. Device Symbolization Code TISP4070L3 4070L3 TISP4350L3 4350L3 "TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. JULY 2000 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.