TISP4350L3LM-S - Bourns, Inc. - Datasheet.Directory

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xx0L3LM Overvoltage Protector Series

TISP4070L3LM, TISP4350L3LM

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

How To Order

LM Package (Top View)

Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

Device Symbol

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning

flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used

for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of

devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until

the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the

current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the

diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.

After a Type A surge (200 A, 10/160, and 100 A, 10/560) the equipment is allowed to be non-operational or operational. For an operational

pass, series resistance must be added to reduce the Type A currents to within the TISP4xxxL3LM ratings (50 A, 10/160 and 30 A, 10/560).

Alternatively, a series fuse with an I2t greater than 0.45 A2s and less than 5.6 A2s could be used to give a non-operational pass. After a Type B

surge the equipment must be operational. As the TISP4xxxL3LM has a current rating of 40 A, will survive both Type B surges, metallic (25 A,

9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to Type B surges.

For metallic protection, the TISP4350L3LM is connected between the Ring and Tip conductors. For longitudinal protection two TISP4350L3LM

protectors are used; one between the Ring conductor to ground and the other between the Tip conductor to ground. The FCC Part 68 B type

ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4350L3LM will not clip the B type ringing

voltage as it has a high impedance up to 275 V.

The TISP4070L3LM should be connected after the hook switch to protect the following electronics. As the TISP4070L3LM has a high

impedance up to 58 V, it will switch off after a surge and not be triggered by the normal exchange battery voltage.

Description

Device VDRM

V(BO)

‘4070 58 70

‘4350 275 350

Ring-Tip Protection ............................................ TISP4350L3LM

Electronics Protection ....................................... TISP4070L3LM

Rated for UL 1950, ITU-T and TIA/EIA-IS-968

Surge

Type Standard Wave

Shape

ITSP

ATIA/EIA-IS-968

(formerly FCC Part 68)

10/160 50

10/560 30

BTIA/EIA-IS-968

UL 1950/ ITU-T K.21

9/720

10/700 40

NC - No internal connection on pin 2

T(A)

R(B)

MD4XATA

RSD4XAA

Terminals T and R correspond to the

alternative line designators of A and B

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Device Package Type Carrier Quantity

TISP4070L3 LM (Straight Lead DO-92) Bulk Pack 2 000

TISP4350L3 LM (Straight Lead DO-92) Bulk Pack 2 000

TISP4070L3LM-S

TISP4350L3LM-S

Order As

*RoHS COMPLIANT

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xx0L3LM Overvoltage Protector Series

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)

Rating Symbol Value Unit

Repetitive peak off-state voltage ‘4070

‘4350 VDRM ± 58

± 275 V

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

ITSP A

10/160 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/160 µs voltage wave shape)

10/560 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/560 µs voltage wave shape)

5/320 (TIA/EIA-IS-968 (formerly FCC Part 68), 9/720 µs voltage wave shape) 40

5/310 (ITU-T K.21, 10/700 voltage wave shape)

Non-repetitive peak on-state current (see Notes 2 and 3) ITSM 4A

50/60 Hz, 1 s

Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs

Junction temperature TJ-40 to +150 °C

Storage temperature range Tstg -65 to +150 °C

NOTES: 1. Initially, the TISP4xxxL3LM must be in thermal equilibrium with TJ= 25 °C

2. The surge may be repeated after the TISP4xxxL3LM returns to its initial conditions.

3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.

Parameter Test Conditions Min Typ Max Unit

IDRM Repetitive peak off-

state current VD = VDR T = 25 °C

T = 85 °C

M±10

±5µA

V(BO) Breakover voltage

dv/dt = ±250 V/ms, RSOURCE = 300 Ω‘4070

‘4350

±70

±350 V

dv/dt = ±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

'4070

'4350

±78

±359 V

I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω±40 ±250 mA

VTOn-state voltage IT=±5A, t

W= 100 µs±3V

IHHolding current IT=±5A, di/dt=-/+30mA/ms ±120 ±350 mA

dv/dt Critical rate of rise of

off-state voltage Linear voltage ramp, Maximum ramp value < 0.85 VDRM ±5kV/µs

IDOff-state current VD=±50 V ±10 µA

Coff Off-state capacitance

f = 100 kHz, Vd=1V rms, VD=0,

VD= 1 V,

VD= 5 V

f = 100 kHz, Vd=1V

‘4070

‘4350

rms, VD=0,

VD= 1 V,

VD= 5 V

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xx0L3LM Overvoltage Protector Series

Thermal Characteristics

Parameter Test Conditions Min Typ Max Unit

RΘJA Junctio

NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

n to free air thermal resistance

EIA/JESD51-3 PCB, I = I ,

T TSM(1000)

T = 25 °C, (see Note 4)

= 25 °C

265 mm x 210 mm populated line card,

4-layer PCB, I = I , T

T TSM(1000)

120

°C/W

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xx0L3LM Overvoltage Protector Series

Parameter Measurement Information

Figure 1. Voltage-Current Characteristic for T and R Terminals

All Measurements are Referenced to the R Terminal

-v VDRM

IDRM

ITSM

ITSP

V(BO)

I(BO)

Quadrant I

Switching

Characteristic

V(BO)

I(BO)

ITSM

ITSP

-i

Quadrant III

Switching

Characteristic PMXXAJA

VDRM

IDRM

JULY 2000 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xx0L3LM Overvoltage Protector Series

Device Symbolization Code

MECHANICAL DATA

Devices will be coded as below.

Device Symbolization

Code

TISP4070L3 4070L3

TISP4350L3 4350L3

“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.

“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.