2SD1664 Transistor, NPN Features available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DAx, where * is hpe code Pc =2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate low collector saturation voltage, typically VoE;saty = 0.15 V for Io/lg = 500 maso mA complementary pair with 2SB1132 Absolute maximum ratings (T, = 25C) Dimensions (Units : mm) 2S0D1664 (MPT3) g 45 O 402 42 1 1.6401 1.50.41 C 09 a cI _ a? 5 20 39 A ; * [| +04 C] CI s lls | 0.40.05 lye + 5101 - 2.15204 | 1.5 201 we 3.0+0.2 (1) Base (2) Collector (3) Emitter Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vcgo 40 Vv Collector-to-emitter voltage Vceo 32 V Emitter-to-base voltage VEBo 5 Vv I A |DC Collector current Ic 2 A Pw = 20 ms, Duty = 50% wie et 0.5 Ww Collector dissipation Pc - 2 W_ _|Mounted on 40 x 40 x 0.7 mm ceramic PCB Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C 232 ROM Surface Mount Transistors Transistor, NPN, 2SD series 2SD1664 Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol; Min | Typical} Max Unit Conditions Collector-to-base = breakdown voltage BVcpo | 40 Vi jlo = S50 pA Collector-to-emitter = breakdown voltage BVceo | 32 Vo |ic=1mA Emitter-to-base _ breakdown voltage BVeBo 5 Vile =50 pA Collector cutoff current IcBo 0.5 WA |Vog=20V Emitter cutoff current leso 0.5 HA |Vegp=4V DC current gain hee 82 390 Voce =3 V, Io = 100 mA Collector-to-emitter _ saturation voltage Voce (sat) 0.4 Vv Io/lp = 500 mA/50 mA Transition frequency fr 150 MHz |Vce =5V, le =-50 mA, f = 100 MHz Output capacitance Cob 15 PF |Vcg = 10 V, le = 0A, f = 1 MHz hee rankings Item P Q R hee 82 ~ 180 120 ~ 270 180 ~ 390 Electrical characteristic curves . 5 = S 2.0 7 _ 1 a < {1 : s NC teen. : 3 NS ceramic PCB 3 010 0 i | 3 5 Unmounted oO 0 0.0 0 25 50 75 100 125 150 0.7 1 10 50 AMBIENT TEMPERATURE : Ta ('C) COLLECTOR TO EMITTER VOLTAGE : VcE (V} Figure 1 Figure 2 Surface Mount Transistors 233 2$D1664 Transistor, NPN, 2SD series 500 = <q < = vi 2 a r a ul oc a > ac 5 > 1.0mA c Oo oO ac 51 2 / Oo be : a a : 2 4 O5mA oO 2 Oo 0 ls OmA ; 44, i) 04 12 16 20 BASE TO EMITTER VOLTAGE: Vee (V) COLLECTOR TO EMITTER VOLTAGE : Ver (V) Figure 3 Figure 4 1.000 w1000 uw rey 500 z = b So 2 5 w 200 w = cl > 5 oO 100 3 3 3 50 1 10 100 1000 1 10 1000 COLLECTOR CURRENT: Ic (mA) COLLECTOR CURRENT | le (mA) Figure 5 Figure 6 Ic/ia= 10 oS an Voce sani (V) 2 oO a to 0.02 0.01 | COLLECTOR SATURATION VOLTAGE: SATURATION VOLTAGE : Vee (sat) (V) COLLECTOR t 10 100 1000 1 10 100 1000 COLLECTOR CURRENT: Ie (mA) COLLECTOR CURRENT : ic(mA) Figure 7 Figure 8 234 RONM Surface Mount Transistors Transistor, NPN, 2SD series 2SD1664 TT ,=25 t=1MHz le 0 TRANSITION FREQUENCY: tt (MHz) COLLECTOR OUTPUT CAPACITANCE :Cob (pF) 8 - ~10 100 04 1 10 20 EMITTER CURRENT It mA} COLLECTOR TO BASE VOLTAGE : Vca (V) Figure 9 Figure 10 Ordering information Package Tape Code T100 Basic order quantity 1000 2SD1664 * * = Standard, ** = Semi-standard, * = Special order Surface Mount Transistors ROHM 235